STGW50HF60SD. 60 A, 600 V, very low drop IGBT with soft and fast recovery diode. Features. Application. Description

Size: px

Start display at page:

Download "STGW50HF60SD. 60 A, 600 V, very low drop IGBT with soft and fast recovery diode. Features. Application. Description"

Clementine Chandler
5 years ago
Views:

1 60 A, 600 V, very low drop IGBT with soft and fast recovery diode Features Very low otate voltage drop Low switching off High current capability Very soft ultra fast recovery antiparallel diode Application PV inverter UPS Description TO is a very low drop IGBT based on new advanced planar technology, showing extremely low otate voltage and limited turnoff losses. The overall performance makes this IGBT ideal in low frequency switches of mixed frequency topologies for PF 1. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging GW50HF60SD TO247 Tube December 2010 Doc ID Rev 2 1/

2 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collectoremitter voltage (V GE = 0) 600 V (1) I C Continuous collector current at T C = 25 C 110 A (1) I C Continuous collector current at T C = C 60 A I (2) CL Turnoff latching current 60 A (3) I CP Pulsed collector current 130 A V GE Gateemitter voltage ±20 V P TOT Total dissipation at T C = 25 C 284 W I F Diode RMS forward current at T C = 25 C 30 A Surge non repetitive forward current t I p = 10 ms FSM 120 A sinusoidal T j Operating junction temperature 55 to 150 C 1. Calculated according to the iterative formula: I C ( T C ) T jmax ( ) T C R thj c V CE( sat) ( max) T jmax = ( ( ), I C ( T C )) 2. Vclamp = 80% of V CES, T j =150 C, R G =10 Ω, V GE =15 V 3. Pulse width limited by maximum junction temperature and turnoff within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R thjcase Thermal resistance junctioncase IGBT 0.44 C/W R thjcase Thermal resistance junctioncase diode 1.25 C/W R thjamb Thermal resistance junctionambient 50 C/W 2/13 Doc ID Rev 2

3 Electrical characteristics 2 Electrical characteristics (T J =25 C unless otherwise specified) Table 4. Static Symbol Parameter Test conditio Min. Typ. Max. Unit V (BR)CES Collectoremitter breakdown voltage (V GE = 0) I C = 1 ma 600 V V GE = 15 V, I C = 30 A V Collectoremitter saturation V CE(sat) V voltage GE = 15 V, I C = 30 A, T J =125 C 1.05 V V GE(th) Gate threshold voltage V CE = V GE, I C = 250 µa V I CES I GES Collector cutoff current (V GE = 0) Gateemitter leakage current (V CE = 0) V CE =600 V V CE =600 V, T J =125 C µa µa V GE =± 20 V ± na g fs Forward traconductance V CE = 15 V, I C = 30 A 25 S Table 5. Dynamic Symbol Parameter Test conditio Min. Typ. Max. Unit C ies C oes C res Input capacitance Output capacitance Reverse trafer capacitance V CE = 25 V, f = 1 MHz, V GE = pf pf pf Q g Q ge Q gc Total gate charge Gateemitter charge Gatecollector charge V CE = 480 V, I C = 30 A,V GE =15 V nc nc nc Doc ID Rev 2 3/13

4 Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CC = 400 V, I C = 30 A R G = 10 Ω, V GE = 15 V, (see Figure 15) A/µs t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CC = 400 V, I C = 30 A R G = 10 Ω, V GE = 15 V, T J = 125 C (see Figure 15) A/µs t r (V off ) t d ( off ) t f Off voltage rise time Turnoff delay time Current fall time V CC = 400 V, I C = 30 A R G = 10 Ω, V GE = 15 V, (see Figure 15) t r (V off ) t d ( off ) t f Off voltage rise time Turnoff delay time Current fall time V CC = 400 V, I C = 30 A R G = 10 Ω, V GE = 15 V, T J = 125 C (see Figure 15) Table 7. Switching energy (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit Eon (1) (2) E off E ts Eon (1) E (2) off E ts Turnon switching losses Turnoff switching losses Total switching losses Turnon switching losses Turnoff switching losses Total switching losses V CC = 400 V, I C = 30 A R G = 10 Ω, V GE = 15 V, (see Figure 15) V CC = 400 V, I C = 30 A R G = 10 Ω, V GE = 15 V, T J = 125 C (see Figure 15) 1. Eon is the turnon losses when a typical diode is used in the test circuit in Figure 15. If the IGBT is offered in a package with a copack diode, the copack diode is used as external diode. IGBTs and diode are at the same temperature (25 C and 125 C). 2. Turnoff losses include also the tail of the collector current mj mj mj mj mj mj Table 8. Collectoremitter diode Symbol Parameter Test conditio Min. Typ. Max. Unit V F Forward onvoltage I F = 30 A I F = 30 A, T J = 125 C V V t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 30 A, V R = 50 V, di/dt = A/µs (see Figure 18) nc A t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 30 A, V R = 50 V, T J = 125 C, di/dt = A/µs (see Figure 18) nc A 4/13 Doc ID Rev 2

5 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Trafer characteristics IC (A) 120 VGE=15V VGE=11V AM0922v1 IC (A) 120 VCE=10V AM09222v1 VGE=10V VGE=8V VCE(V) VGE(V) Figure 4. Collectoremitter on voltage vs temperature Figure 5. Collectoremitter on voltage vs collector current VCE(sat) (V) 1.5 AM08877v1 VCE(sat) (V) 1.7 V GE =15V AM08878v V GE =15V I C =60A I C =30A T J =50 C T J =25 C 0.9 I C =15A TJ( C) 0.7 T J =125 C IC(A) Figure 6. Breakdown voltage vs temperature Figure 7. Gate threshold voltage vs temperature V(BR)CES (V) 1.10 I C = 1 ma AM08879v1 VGE(th) (norm) 1.1 V GE =V CE I C =250µA AM08880v TJ( C) TJ( C) Doc ID Rev 2 5/13

6 Electrical characteristics Figure 8. Gate charge vs gateemitter voltage Figure 9. Capacitance variatio VGE (V) 16 VCC=480V IC=30A AM08881v1 C (pf) AM08882v1 Cies f=1mhz VGE=0 Coes 4 Cres Qg(nC) VCE(V) Figure 10. Switching losses vs collector current Figure 11. Switching losses vs gate resistance E (µj) AM08883v1 E (µj) AM08884v1 0 E off V CC =400V, R G =10Ω V GE =15V, T J =125 C 0 E off V CC =400V, I C =30A V GE =15V, T J =125 C E on E on IC(A) RG(Ω) Figure 12. Switching losses vs temperature Figure 13. Turnoff SOA E (µj) E off AM08885v1 IC (A) AM08886v1 0 V CC =400V, I C =30A V GE =15V, R G =10Ω 10 1 E on 0.1 R G =10Ω V GE =15V T J =150 C TJ( C) VCE(V) 6/13 Doc ID Rev 2

7 Electrical characteristics Figure 14. IF (A) 30 Emittercollector diode characteristics T J =25 C typical values AM08887v1 20 T J =125 C typical values 10 T J =125 C maximum values VF(V) Doc ID Rev 2 7/13

8 Test circuits 3 Test circuits Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit AM01504v1 AM01505v1 Figure 17. Switching waveform Figure 18. Diode recovery time waveform 90% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 10% 90% 10% 90% 10% IF IRRM ta trr tb IRRM t VF dv/dt AM01506v1 AM01507v1 8/13 Doc ID Rev 2

9 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specificatio, grade definitio and product status are available at: ECOPACK is an ST trademark. Doc ID Rev 2 9/13

10 Package mechanical data Table 9. Dim. TO247 mechanical data mm Min. Typ. Max. A A b b b c D E e 5.45 L L L P R S /13 Doc ID Rev 2

11 Package mechanical data Figure 19. TO247 drawing _F Doc ID Rev 2 11/13

12 Revision history 5 Revision history Table 10. Document revision history Date Revision Changes 15Jan Initial release. 21Dec Document status promoted to datasheet. 12/13 Doc ID Rev 2

13 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America Doc ID Rev 2 13/13

STGWA19NC60HD. 31 A, 600 V, very fast IGBT with Ultrafast diode. Features. Applications. Description

STGWA19NC60HD. 31 A, 600 V, very fast IGBT with Ultrafast diode. Features. Applications. Description 31 A, 600 V, very fast IGBT with Ultrafast diode Features Low onvoltage drop (V CE(sat) ) Very soft Ultrafast recovery antiparallel diode Applicatio High frequency motor drives SMPS and PFC in both hard