STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90Z Datasheet

Transcription

1 STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90Z Datasheet N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH Power MOSFET in D 2 PAK, TO-220, TO-220FP and TO-247 packages TAB TAB Features D PAK TO Order codes V DS R DS(on) max. I D STB6NK90ZT4 STP6NK90Z STP6NK90ZFP 900 V 2 Ω 5.8 A TO-220FP D(2, TAB) TO STW7NK90Z Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected G(1) Applications Switching applications S(3) Product status STB6NK90ZT4 STP6NK90Z STP6NK90ZFP STW7NK90Z AM01475V1 Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. DS Rev 6 - April 2018 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value D 2 PAK, TO-220, TO-247 TO-220FP Unit V DS Drain-source voltage 900 V V GS Gate-source voltage ± 30 V I D Drain current (continuous) at T C = 25 C (1) A I D Drain current (continuous) at T C = 100 C (1) A I (2) DM Drain current (pulsed) A P TOT Total dissipation at T C = 25 C W dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T c = 25 C) V T j Operating junction temperature range C -55 to 150 T stg Storage temperature range C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I SD 5.8 A, di/dt 200 A/µs, V DD V (BR)DSS. Table 2. Thermal data Symbol Parameter Value D 2 PAK TO-220 TO-220FP TO-247 Unit R thj-case Thermal resistance junction-case C/W R thj-pcb Thermal resistance junction-pcb 60 C/W R thj-amb Thermal resistance junction-ambient C/W Table 3. Avalanche characteristics Symbol Parameter Value Unit I AR Avalanche current, repetitive or not-repetitive (pulse width limited by T j Max) 5.8 A E AS Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 50 V) 300 mj DS Rev 6 page 2/26

3 Electrical characteristics 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source Breakdown voltage Zero gate voltage drain current Gate body leakage current I D = 1 ma, V GS = 0 V 900 V V GS = 0 V, V DS = 900 V 1 µa V GS = 0 V, V DS = 900 V, T C = 125 C (1) 50 µa V DS = 0 V, V GS = ±20 V ±10 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 100 µa V R DS(on) Static drain-source on resistance V GS = 10 V, I D = 2.9 A Ω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance 1350 C oss Output capacitance V DS = 25 V, f = 1 MHz, V GS = 0 V 130 C rss Reverse transfer capacitance 26 pf C oss eq. (1) Equivalent output capacitance V GS = 0 V, V DS = 0 V to 720 V 70 pf t d(on) Turn-on delay time 17 t r t r(off) Rise time Turn-off delay time V DD = 450 V, I D = 3 A, R G = 4.7 Ω, V GS = 10 V (see Figure 17. Test circuit for resistive load switching times and Figure 22. Switching time waveform) t r Fall time 20 Q g Total gate charge V DD = 720 V, I D = 5.8 A, V GS = 0 to 10 V Q gs Gate-source charge (see Figure 18. Test circuit for gate charge 8.5 Q gd Gate-drain charge behavior) 25 t r(voff) Off-voltage rise time V DD = 720 V, I D = 5.8 A, R G = 4.7 Ω, 11 t r Fall time V GS = 10 V (see Figure 19. Test circuit for inductive load switching and diode recovery 12 t c Cross-over time times) 20 ns nc ns 1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS. DS Rev 6 page 3/26

4 Electrical characteristics Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current 5.8 I SDM Source-drain current (pulsed) 23.2 A V SD Forward on voltage I SD = 5.8 A, V GS = 0 V 1.6 V t rr Reverse recovery time I SD = 5.8 A, di/dt = 100 A/µs 840 ns Q rr Reverse recovery charge V DD = 36 V, T j = 150 C (see Figure 5880 nc I RRM Reverse recovery current 19. Test circuit for inductive load switching and diode recovery times) 14 A Table 7. Gate-source zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)GSO Gate-source breakdown voltage I gs = ±1 ma, I D = 0 A ±30 V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS Rev 6 page 4/26

5 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area for TO-220/D 2 PAK Figure 2. Thermal impedance for TO-220/D 2 PAK GADG MT GADG MT Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP GADG MT GADG MT Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 GADG MT GADG MT DS Rev 6 page 5/26

6 Electrical characteristics curves Figure 7. Output characterisics Figure 8. Transfer characteristics GADG MT GADG MT Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage GADG MT GADG MT Figure 11. Capacitance variations GADG MT Figure 12. Normalized gate threshold voltage vs temperature GADG MT DS Rev 6 page 6/26

7 Electrical characteristics curves Figure 13. Normalized on resistance vs temperature Figure 14. Source-drain diode forward characteristic GADG MT GADG MT Figure 15. Normalized V (BR)DSS vs temperature Figure 16. Maximum avalanche energy vs temperature GADG MT GADG MT DS Rev 6 page 7/26

8 Test circuits 3 Test circuits Figure 17. Test circuit for resistive load switching times Figure 18. Test circuit for gate charge behavior VDD VD RL μf 3.3 μf VDD VGS 12 V IG= CONST 47 kω 100 Ω 100 nf D.U.T. 1 kω VGS pulse width RG D.U.T. pulse width 2200 μf kω 47 kω VG 1 kω AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive load test circuit G 25 Ω A D D.U.T. S B + RG A fast diode B A B G 100 µh D µf + µf VDD D.U.T. S Vi VD ID L D.U.T µf 3.3 µf VDD _ pulse width AM01471v1 AM01470v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform V(BR)DSS VD ton toff td(on) tr td(off) tf IDM 90% 10% 90% ID 0 10% VDS VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 DS Rev 6 page 8/26

9 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DS Rev 6 page 9/26

10 D²PAK (TO-263) package information 4.1 D²PAK (TO-263) package information Figure 23. D²PAK (TO-263) type A package outline _24 DS Rev 6 page 10/26

11 D²PAK (TO-263) package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Typ. Max. A A b b c c D D D E E E e 2.54 e H J L L L R 0.40 V2 0 8 DS Rev 6 page 11/26

12 D²PAK (TO-263) package information Figure 24. D²PAK (TO-263) type B package outline _24_B DS Rev 6 page 12/26

13 D²PAK (TO-263) package information Table 9. D²PAK (TO-263) type B mechanical data Dim. mm Min. Typ. Max. A A b b b b c c c D D E E e 2.54 BSC H L L L L L DS Rev 6 page 13/26

14 D²PAK (TO-263) package information Figure 25. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS Rev 6 page 14/26

15 TO-220 type A package information 4.2 TO-220 type A package information Figure 26. TO-220 type A package outline _typeA_Rev_21 DS Rev 6 page 15/26

16 TO-220 type A package information Table 10. TO-220 type A package mechanical data Dim. mm Min. Typ. Max. A b b c D D E e e F H J L L L L øp Q DS Rev 6 page 16/26

17 TO-220 type H package information 4.3 TO-220 type H package information Figure 27. TO-220 type H package outline _H_21 DS Rev 6 page 17/26

18 TO-220 type H package information Table 11. TO-220 type H package mechanical data Dim. mm Min. Typ. Max. A A A A b b b b b c D D E e e H L L L L P Q DS Rev 6 page 18/26

19 TO-220FP package information 4.4 TO-220FP package information Figure 28. TO-220FP package outline _Rev_12_B DS Rev 6 page 19/26

20 TO-220FP package information Table 12. TO-220FP package mechanical data Dim. mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia DS Rev 6 page 20/26

21 TO-247 package information 4.5 TO-247 package information Figure 29. TO-247 package outline _9 DS Rev 6 page 21/26

22 TO-247 package information Table 13. TO-247 package mechanical data Dim. mm Min. Typ. Max. A A b b b c D E e L L L ØP ØR S DS Rev 6 page 22/26

23 Ordering information 5 Ordering information Table 14. Order codes Order code Marking Package Packing STB6NK90ZT4 B6NK90Z D 2 PAK Tape e reel STP6NK90Z P6NK90Z TO-220 Tube STP6NK90ZFP P6NK90ZFP TO-220FP Tube STW7NK90Z W7NK90Z TO-247 Tube DS Rev 6 page 23/26

24 Revision history Table 15. Document revision history Date Version Changes 29-Nov Complete version 16-Aug New template, no content change 10-Apr Typo mistake on Table 2 04-Apr Removed maturity status indication from cover page. The document status is production data. Updated Table 5. Dynamic and Table 6. Source drain diode. Minor text changes. DS Rev 6 page 24/26

25 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics curves Test circuits Package information D²PAK (TO-263) package information TO-220 type A package information TO-220 type H package information TO-220FP package information TO-247 package information Ordering information...23 Revision history...24 DS Rev 6 page 25/26

26 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DS Rev 6 page 26/26