Features. Description. Table 1: Device summary Order code Marking Package Packing STH270N4F N4F3 H 2 PAK-2 Tape and reel

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1 Automotive-grade N-channel 40 V, 1.4 mω typ., 180 A STripFET F3 Power MOSFET in a H²PAK-2 package Datasheet - production data Features Order code V DS R DS(on) max. I D STH270N4F V 1.7 mω 190 A Designed for automotive applications and AEC-Q101 qualified Conduction losses reduced Low profile, very low parasitic inductance, high current package Figure 1: Internal schematic diagram Applications Switching applications Description This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Table 1: Device summary Order code Marking Package Packing STH270N4F N4F3 H 2 PAK-2 Tape and reel October 2015 DocID16957 Rev 4 1/17 This is information on a product in full production.

2 Contents STH270N4F3-2 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information H2PAK-2 package information Packaging information Revision history /17 DocID16957 Rev 4

3 Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 40 V V GS Gate-source voltage ± 20 V I D (1) I D (1) I D (2) P TOT (3) E AS (4) Drain current (continuous) at T C = 25 C 180 A Drain current (continuous) at T C = 100 C 180 A Drain current (pulsed) 720 A Total dissipation at T C = 25 C 300 W Single pulse avalanche energy 1000 mj T J Operating junction temperature C -55 to 175 T stg Storage temperature C Notes: (1) Current limited by package (2) Pulse width limited by safe operating area (3) This value is rated according to Rthj-c (4) Starting TJ = 25 C, I D = 80, V DD = 32 V Table 3: Thermal resistance Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max. 0.5 C/W R thj-pcb (1) Thermal resistance junction-pcb max. 35 C/W Notes: (1) When mounted on FR-4 board of 1 inch², 2 oz Cu DocID16957 Rev 4 3/17

4 Electrical characteristics STH270N4F3-2 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 4: On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage (V GS= 0) Zero gate voltage drain current (V GS = 0) I D = 250 µa 40 V V GS = 0 V, V DS = 40 V 10 µa V GS = 0 V, V DS = 40 V; T C = 125 C 100 µa I GSS Gate body leakage current V DS = 0, V GS = ±20 V ±200 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa 2 4 V R DS(on) Static drain-source onresistance V GS = 10 V, I D = 80 A mω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance 7400 C oss Output capacitance V DS = 25 V, f = 1 MHz, 1800 pf C rss Reverse transfer V GS = 0 capacitance 50 pf Q g Total gate charge V DD = 20 V, I D = 160 A nc Q gs Gate-source charge V GS = 10 V 30 nc See Figure 14: "Test Q gd Gate-drain charge circuit for gate charge behavior" 25 nc pf Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V DD = 20 V, I D = 80 A, 25 ns t r Rise time R G = 4.7 Ω, V GS= 10 V 180 ns - - t d(off) Turn-off delay time See Figure 2: "Safe 110 ns t f Fall time operating area" 45 ns 4/17 DocID16957 Rev 4

5 Table 7: Source-drain diode Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I SD (1) I SDM (2) V SD (3) Source-drain current 180 A Source-drain current (pulsed) 720 A Forward on voltage I SD = 180 A, V GS = V t rr Reverse recovery time I SD = 160 A, 70 ns Q rr Reverse recovery charge di/dt = 100 A/µs, nc V DD = 32 V, T j = 150 C Figure 15: "Test I RRM Reverse recovery current circuit for inductive load switching and 3.2 A diode recovery times" Notes: (1) Current limited by package (2) Pulse width limited by safe operating area (3) Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID16957 Rev 4 5/17

6 Electrical characteristics 2.2 Electrical characteristics (curves) Figure 2: Safe operating area AM01500v1 ID (A) 2 10 Operation in this area is limited by Max Rds(on) 100µs Figure 3: Thermal impedance STH270N4F ms 10ms 0 10 Tj=175 C Tc=25 C Single pulse VDS(V) Figure 4: Output characteristics AM01502v1 ID(A) 450 VGS=10V 400 5V V VDS(V) Figure 5: Transfer characteristics AM01503v1 ID(A) 450 VDS=5V 400 TC=25 C VGS(V) Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance RDS(on) Ω VGS=10V AM00891v ID(A) 6/17 DocID16957 Rev 4

7 Figure 8: Capacitance variations Electrical characteristics Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V (BR)DSS vs temperature DocID16957 Rev 4 7/17

8 Electrical characteristics Figure 12: Drain-source diode forward characteristics VSD (V) TJ=-50 C TJ=25 C TJ=175 C ISD(A) STH270N4F3-2 8/17 DocID16957 Rev 4

9 Test circuits 3 Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID16957 Rev 4 9/17

10 Package information STH270N4F3-2 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 10/17 DocID16957 Rev 4

11 4.1 H 2 PAK-2 package information Figure 19: H²PAK-2 package outline Package information _D DocID16957 Rev 4 11/17

12 Package information STH270N4F3-2 Table 8: H²PAK-2 package mechanical data mm Dim. Min. Typ. Max. A A C e E F H H L L L L L M R V /17 DocID16957 Rev 4

13 Figure 20: H²PAK-2 recommended footprint Package information _D DocID16957 Rev 4 13/17

14 Packaging information STH270N4F3-2 5 Packaging information Figure 21: Tape outline 14/17 DocID16957 Rev 4

15 Figure 22: Reel outline Packaging information REE L DIMENS IONS T 40 mm min. Access hole At slot location B D C A N Full radius Tape slot In core for Tape start G measured At hub Table 9: Tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base quantity 1000 P Bulk quantity 1000 R 50 T W DocID16957 Rev 4 15/17

16 Revision history STH270N4F3-2 6 Revision history Table 10: Document revision history Date Revision Changes 10-Jan Initial release. Added H 2 PAK-2 package. 14-Mar Updated: package and packing information. Minor text changes Updated: H 2 PAK-6 package information. 02-Dec Updated the title, features and description. Minor text changes. Updated the title and features. 22-Oct Minor text changes. 16/17 DocID16957 Rev 4

17 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DocID16957 Rev 4 17/17

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