Parameter Symbol Limit Unit IDM 20 A T A = PD T A =100

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1 Features: Super high dense cell design for low R DS(ON) Rugged and reliable Surface Mount Package B VDSS =20V, R DS(ON) =24.5mΩ ID=6A Application DC-DC converters Power management in portable and Battery-powered products Absolute Maximum Ratings (T A =25 Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current (1) ID 6 A Pulsed Drain Current (1), (2) IDM 20 A Power Dissipation (1) T A = PD T A = W Operating Junction and Storage Temperature Range TJ, Tstg -55 to150 Thermal Characteristics Symbol Characteris Typ Max. Units R θja* Junction-to-Ambient / W Notes: (1). Surface Mounted on 1 in2 pad area, t 10 sec (2). Pulse width 300 µs, duty cycle 2 %

2 Electrical Characteristics (TA =25 Unless Otherwise Specified) Symbol Parameter Test Condition Min. Typ. Max. Unit STATIC BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250µA V VGS(th) Gate Threshold Voltage VDS=VGS,ID=250µA V IGSS Gate-Body Leakage VGS=±10V ±0.1 ua IDSS Zero Gate Voltage Drain Current VDS=16V,VGS=0V µa RDS(ON) Drain-Source On-Resistance VGS=4.5V,ID=6A mω RDS(ON) Drain-Source On-Resistance VGS=2.5V,ID=5A mω DYNAMIC Qg Total Gate Charge VDS = 10V, ID = 6A, VGS = 4.5V Qgs Gate-Source Charge nc Qgd Gate-Drain Charge Ciss Input Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz Coss Output Capacitance PF Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time V DS = 10 V, V GEN = 4.5 V R G = 6 Ω, R L = 10 Ω, tr Turn-On Rise Time I DS = 1 A ns td(off) Turn-Off Delay Time tr Turn-Off Fall Time Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Unit Test Condition I S Continuous Source current Integral reverse PN diode in The A I SM Pulsed Source Current MOSFET V SD Diode Forward voltage V I S =1A,V GS =0V

3 Power Dissipation Drain Current PTOT Power (W) ID Drain Current (A) T J Junction Temperature ( ) T J Junction Temperature ( ) Safe Operation Area Thermal Transient Impedance ID Drain Current (A) Normalized Effective Transient VDS Drain-Source Voltage (V) Square Wave Pulse Duration (sec)

4 Output Characteristics Drain-Source On Resistance Transfer Characteristics RDS(ON) - On Resistance (Ω) ID - Drain Current (A) V DS - Drain-Source Voltage (V) Gate Threshold Voltage Normalized Threshold Voltage RDS(ON) - On Resistance (Ω) I D - Drain Current (A) V GS - Gate-Source Voltage (V) T J Junction Temperature ( )

5 Drain-Source On Resistance Source-Drain Diode Forward V SD Source-Drain Voltage (V) Gate Charge C Capacitance (pf) C Capacitance (pf) Normalized On Resistance IS Source Current (A) T J Junction Temperature ( ) Capacitance V DS Drain-Source Voltage (V) Q G Gate Charge (nc)

6 Test Circuit and Waveform

7 Package Dimension

8 Important Notice and Disclaimer LSC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. LSC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does LSC assume any liability for application assistance or customer product design. LSC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of LSC. LSC products are not authorized for use as critical components in life support devices or systems without express written approval of LSC.

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