PNMT50V02E N-Channel MOSFET

Transcription

1 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) GS =V.22 D (3) G () S (2) Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage V DS 5 V Gate-Source Voltage V GS ±2 V Drain Current- Continuous I D.22 A Drain Current-Pulsed(Note ) I DM.88 A Maximum Power Dissipation P D.35 W Operating Junction and Storage Temperature Range T J, T STG -55 to 5 Thermal Characteristics Parameter Symbol Maximum Units Thermal Resistance, Junction-to-Ambient R θja 35 /W Rev.6

2 Electrical characteristics per ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Off Characteristics Drain-Source Breakdown Voltage BV DSS I D =25μA,V GS =V 5 - V Zero Gate Voltage Drain Current I DSS V DS =5V,V GS =V - - μa Gate-Body Leakage Current I GSS V DS =V,V GS =±2V ± μa On Characteristics(Note 3) Gate Threshold Voltage V GS(th) V DS =V GS, I D =25μA.6..6 V Static Drain-Source On-Resistance R DS(ON) V GS =5V, I D =.2A V GS =V, I D =.22A 2 Ω Drain-Source Diode Forward Voltage V SD V GS =V,I S =.22A -.3 V Forward Transonductance gfs V DS =V,I D =.2A.2 S Dynamic Characteristics(Note 4) Input Capacitance Ciss 3 Output Capacitance Coss V DS =25V, V GS =V, f=.mhz 5 Reverse Transfer Capacitance Crss 6 pf Total Gate Charge Qg V GS =V, V DS =25V, I D =.2A 2.4 nc Switching Characteristics(Note 4) Turn-On Delay Time t d(on) - 5 ns Turn-Off Delay Time t d(off) V DD =3V, V GS =V, - 6 ns R G =6Ω, Turn-On Rise Time t r I D =.22A - 5 ns Turn-On Fall Time t f - 35 ns Diode Forward Current(Note 2) I S.22 A Diode Forward Voltage(Note 3) V SD V GS =V, I S =.22A.3 V Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t sec. 3. Pulse Test Pulse Width 3μs, Duty Cycle 2%. 4. Guaranteed by design, not subject to production. Rev.6 2

3 Typical Characteristics V DD t on t off R L t d(on) t r t d(off) t f V GS R GEN V IN G D S V OUT V OUT V IN 9% 9% Inverted % % 9% 5% 5% % Pulse Width Figure. Switching Test Circuit Figure 2. Switching Waveforms 2 V GS =V. ID -Drain Current (A) 5V.5 4V 3V T C =25 2V V DS -Drain-Source Voltage (V) V GS -Gate-Source Voltage (V) Fig 3. Output Characteristics Fig 4. Transfer Characteristics ID -Drain Current (A) RDS(ON) On-Resistance (Ω) V GS =5V. V GS =V.5 RDS(ON) On-Resistance (Ω) I D =5mA I D =2mA I D -Drain Current (A) Fig 5. Drain-Source On-Resistance V GS -Gate-Source Voltage (V) Fig 6. R DS(ON) vs V GS Rev.6 3

4 V DS =V V GS =V VGS -Gate-Source Voltage (V) mA IS-Reverse Drain Current (ma) Qg Gate Charge (nc) Fig 7. Gate Charge V DS -Drain-Source Voltage (V) Fig 8. Source-Drain Diode Forward On Resistance (Normalized) V DS =V I D =22mA ID -Drain Current (A).. R DS(ON) Limited V GS =V Single Pulse R θja =35 /W T A =25 DC ms ms s us ms T J -Junction Temperature ( ) Fig 9. Drain-Source On-Resistance.. V DS -Drain-Source Voltage (V) Fig. Safe Operation Area 8 C-Capacitance (pf) 6 4 C ISS 2 C OSS C RSS V DS -Drain-Source Voltage: (V) Figure. Capacitance vs. V DS Rev.6 4

5 R(t), Normalized Effective Transient Thermal Impedance. D= R θja (t)=r(t)*r θja R θja =(See Datasheet).. t t2 Single Pulse TJ*TA=P*R θja (t) Duty Cycle, D=t/t Square Wave Pulse Duration (sec) Fig 2.Normalized Maximum Transient Thermal Impedance P (PK) Product dimension(sot-23) A (3) θ C B () (2) D F E H G K J L Rev.6 5

6 Dim Millimeters Inches MIN MAX MIN MAX A B C D E F G H J K L θ Rev.6 6

7 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 29, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.6 7