Features. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V

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1 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT363 Dual Pin Configuration BVDSS RDSON ID 20V 300m 800mA -20V 600m -400mA Features Fast switching Green Device Available Suit for 1.5V Gate Drive Applications D1 D2 G2 D1 S2 G1 G2 Applications Notebook Load Switch S1 D2 G1 S1 S2 Networking Hand-held Instruments Absolute Maximum Ratings Tc=25 unless otherwise noted Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V I D Drain Current Continuous (T C=25 ) ma Drain Current Continuous (T C=100 ) ma I DM Drain Current Pulsed A P D Power Dissipation (T C=25 ) mw Power Dissipation Derate above mw/ T STG Storage Temperature Range -55 to to 150 T J Operating Junction Temperature Range -55 to to 150 Thermal Characteristics Symbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction to ambient /W 1

2 N-CH Electrical Characteristics (T J =25, unless otherwise) noted) Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS=0V, I D=250uA V BV DSS / T J BV DSS Temperature Coefficient Reference to 25, I D=1mA V/ I DSS V DS=20V, V GS=0V, T J= ua Drain-Source Leakage Current V DS=16V, V GS=0V, T J= ua I GSS Gate-Source Leakage Current V GS=±6V, V DS=0V ±20 ua On Characteristics R DS(ON) V GS(th) V GS=4.5V, I D=0.5A V GS=2.5V, I D=0.4A Static Drain-Source On-Resistance V GS=1.8V, I D=0.2A m V GS=1.5V, ID=0.1A V GS=1.2V, ID=0.1A Gate Threshold Voltage V V GS=V DS, I D =250uA V GS(th) V GS(th) Temperature Coefficient mv/ Dynamic and switching Characteristics Q g Total Gate Charge 2, Q gs Gate-Source Charge 2, 3 V DS=10V, V GS=4.5V, I D=0.5A Q gd Gate-Drain Charge 2, T d(on) Turn-On Delay Time 2, T r Rise Time 2, 3 V DD=10V, V GS=4.5V, R G= T d(off) Turn-Off Delay Time 2, 3 I D=0.5A T f Fall Time 2, C iss Input Capacitance C oss Output Capacitance V DS=10V, V GS=0V, F=1MHz C rss Reverse Transfer Capacitance nc ns pf Drain-Source Diode Characteristics and Maximum Ratings I S Continuous Source Current A V G=V D=0V, Force Current I SM Pulsed Source Current A V SD Diode Forward Voltage V GS=0V, I S=0.2A, T J= V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width 300us, duty cycle 2%. 3. Essentially independent of operating temperature. 2

3 ID, Continuous Drain Current (A) Normalized On Resistance (m ) T C, Case Temperature ( ) Fig.1 Continuous Drain Current vs. T C Fig.2 Normalized RDSON vs. T J Normalized Gate Threshold Voltage (V) VGS, Gate to Source Voltage (V) Fig.3 Normalized V th vs. T J Qg, Gate Charge (nc) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJA) ID, Continuous Drain Current (A) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance V DS, Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area 3

4 P-CH Electrical Characteristics (T J =25, unless otherwise noted) Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS=0V, I D=-250uA V BV DSS/ T J BV DSS Temperature Coefficient Reference to 25, I D=-1mA V/ I DSS V DS=-20V, V GS=0V, T J= ua Drain-Source Leakage Current V DS=-16V, V GS=0V, T J= ua I GSS Gate-Source Leakage Current V GS=±8V, V DS=0V ±20 ua On Characteristics V GS=-4.5V, I D=-0.3A V GS=-2.5V, I D=-0.2A R DS(ON) V GS(th) Static Drain-Source On-Resistance V GS=-1.8V, I D=-0.1A m V GS=-1.5V, I D=-0.1A V GS=-1.2V, I D=-0.1A Gate Threshold Voltage V V GS=V DS, I D =-250uA V GS(th) V GS(th) Temperature Coefficient mv/ Dynamic and switching Characteristics Q g Total Gate Charge 2, Q gs Gate-Source Charge 2, 3 V DS=-10V, V GS=-4.5V, I D=-0.2A Q gd Gate-Drain Charge 2, T d(on) Turn-On Delay Time 2, T r Rise Time 2, 3 V DD=-10V, V GS=-4.5V, R G= T d(off) Turn-Off Delay Time 2, 3 I D=-0.2A T f Fall Time 2, C iss Input Capacitance C oss Output Capacitance V DS=-10V, V GS=0V, F=1MHz C rss Reverse Transfer Capacitance nc ns pf Drain-Source Diode Characteristics and Maximum Ratings I S Continuous Source Current V G=V D=0V, Force Current A I SM Pulsed Source Current A V SD Diode Forward Voltage V GS=0V, I S=-0.2A, T J= V Note : 4. Repetitive Rating : Pulsed width limited by maximum junction temperature. 5. The data tested by pulsed, pulse width 300us, duty cycle 2%. 6. Essentially independent of operating temperature. 4

5 Normalized Gate Threshold Voltage (V) -VGS, Gate to Source Voltage (V) Fig.9 Normalized V th vs. T J Qg, Gate Charge (nc) Fig.10 Gate Charge Waveform Normalized Thermal Response (RθJA) -ID, Continuous Drain Current (A) -ID, Continuous Drain Current (A) Normalized On Resistance (m ) T C, Case Temperature ( ) Fig.7 Continuous Drain Current vs. T C Fig.8 Normalized RDSON vs. T J Square Wave Pulse Duration (s) Fig.11 Normalized Transient Impedance -V DS, Drain to Source Voltage (V) Fig.12 Maximum Safe Operation Area 5

6 SOT363 Dual PACKAGE INFORMATION Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A A A b c D E E e 0.65BSC 0.026BSC L