HM2301BJR P-Channel MOSFET

Transcription

1 HM23BJR Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. D(3) MOSFET Product Summary V DS(V) R DS(on)(Ω ) I D(mA).45@ -2.62@ =-2.5V -8 G().86@ =-.8V S(2) Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage V DS -2 V Gate-Source Voltage ± V Continuous Drain Curren(T J=5 ) Source current(body diode) Continuous I D -8 I DP -2 Continuous I S -5 I SP -2 ma ma Total power dissipation P D 5 mw Channel temperature T CH 5 Range of storage temperature T STG -55 to +5 Thermal resistance Parameter Symbol Limits Units Channel to ambient Rth(ch-a) 833 /W Rev.6.

2 HM23BJR Electrical characteristics per ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage BV DSS I D =-ma,=v -2 - V Zero Gate Voltage Drain Current I DSS V DS =-2V,=V μa Gate-Body Leakage Current I GSS V DS =V,=±8V - - ± μa Gate Threshold Voltage (th) V DS =-V, I D =-μa V, I D =-7mA Ω Static Drain-Source On-Resistance R DS(ON) =-2.5V, I D =-3mA Ω =-.8V, I D =-25mA.86.2 Ω Forward transfer admittance Yfs V DS=-V, I D =-2mA.3 s Input Capacitance C ISS - pf Output Capacitance C OSS =V, V DS =-V, f=mhz - 9 pf Reverse Transfer Capacitance C RSS - 5 pf Turn-On Delay Time t d(on) - 5 ns Turn-Off Delay Time Turn-On Rise Time t d(off) t r V DD -V, =-4.5V, R G=Ω,R L Ω I D =-ma ns ns Turn-On Fall Time t f - 3 ns Total Gate Charge Qg V DD -V, =-4.5V,.4 nc Gate-Source Charge Qgs I D =-2mA.3 nc Gate-Drain Charge Qgd R G=Ω,R L 5Ω.3 nc Drain-Source Diode Forward Voltage V SD =V,I S=-2mA V Rev.6. 2

3 HM23BJR Typical Characteristics.2 =-.V.2 Drain Current: ID(A).5. =-.5V =-3.2V =-2.5V =-2.V =-.8V Drain Current:ID(A).5. =-2.5V =-.8V =-.5V =-.2V.5 =-.2V =-.V.5 =-.V Drain-Source Voltage :V DS (V) Drain-Source Voltage :V DS (V) Fig. Typical output characteristics(Ⅰ) Fig 2. Typical output characteristics(Ⅱ) Drain current: ID (A)... V DS=-V T A= Gate-Source Voltage : (V) Fig 3. Typical transfer characteristics Static Drain-Source On-State Resistance: RDS(ON)(mΩ) =-.5V =-.8V =-2.5V... Drain Current :I D (A) Fig 4. Static drain-source on-state resistance vs. drain current(Ⅰ) =-.2V Static drain-source on-state resistance: RDS(ON) (mω) T A=25 Static Drain-Source On-State Resistance: RDS(ON)(mΩ) =-2.5V T A=25... Drain current :I D (A) Fig 5. Static drain-source on-state resistance vs. drain current(Ⅱ)... Drain Current :I D (A) Fig 6. Static drain-source on-state resistance vs. drain current(Ⅲ) Rev.6. 3

4 HM23BJR Static drain-source on-state resistance: RDS(ON) (mω) =-.8V T A=25 Forward transfer admittance: Yfs (S). V DS=-V T A=25... Drain current :I D (A) Fig 7. Static drain-source on-state resistance vs. drain current(Ⅳ)... Drain Current :I D (A) Fig 8. Forward transfer admittance vs. drain current Reverse drain current: IS(A). =V T A=25 Static drain-source on-state resistance: RDS(ON) (Ω) I D=-.2A I D=-.A..5.5 Source-Drain Voltage:V SD (V) Fig 9. Reverse drain current vs. source-drain voltage Gate-source voltage : (V) Fig. Static drain-source on-state resistance vs. gate source voltage Switching time: t(ns) t r t d(off) t d(on) V DD=-V R G=Ω.. t f Drain-current: I D(A) Fig. Switching characteristics Gate-source voltage: VGS(V) V DD=-V I D=-.2A R G=Ω.5.5 Total gate charge: Qg (nc) Fig 2. Dynamic input characteristics Rev.6. 4

5 HM23BJR f=mhz =V C ISS Capacitance: C(pF) C RSS C OSS.. Drain-source voltage: V DS(V) Fig 3. Typical capacitance vs. drain-source voltage Measurement circuit I D Pulse width R L V DS % 5% 5% 9% R G D.U.T V DD % % V DS 9% 9% t d(on) t r t d(off) t f t off t on Fig.- Switching time measurement circuit Fig.-2 Switching time waveforms I D V DS V G I G(Const.) D.U.T R L Qg R G V DD Qgs Qgd Charge Fig.2- Gate charge measurement circuit Fig.2-2 Gate charge waveform Rev.6. 5

6 HM23BJR Product dimension (SOT-723) R.-R.5 9 (4x) Side View.437±.3 (.).2±.3.8±.25 Bottom View.2± (2) () (3) Unit:mm Unit:mm Ordering information Device Package Shipping HM23BJR SOT-723 (Pb-Free) / Tape & Reel Rev.6. 6