1.5V Drive Nch+Pch MOSFET

Transcription

1 .5V Drive Nch+Pch MOSFET US6M Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions (Unit : mm) TUMT6 Features ) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (.5V drive). 4) Built-in G-S Protection Diode..2Max. Abbreviated symbol : M Applications Switching Inner circuit (6) (5) (4) Packaging specifications Package Type Code Basic ordering unit (pieces) US6M Taping TR 3 2 () (2) ESD PROTECTION DIODE 2 BODY DIODE (3) 2 () Tr (Nch) Source (2) Tr (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr (Nch) Drain Absolute maximum ratings () Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Power dissipation Continuous Continuous Channel temperature Range of storage temperature Pw µs, Duty cycle % 2 Mounted on a ceramic board. Symbol Limits Tr : Nchannel Tr2 : Pchannel S 2 2 S ± ± ID ±.5 ±.3 IDP ±6 ±5.2 IS.5.5 ISP PD..7 Tch 5 Tstg 55 to +5 Unit V V A A A A W / TOTAL W / ELEMENT C C Thermal resistance Parameter Channel to ambient Mounted on a ceramic board Symbol Limits Unit 25 C/W / TOTAL Rth(ch-a) 79 C/W / ELEMENT c 29 ROHM Co., Ltd. All rights reserved. / Rev.A

2 US6M <N-ch> Electrical characteristics () Parameter Symbol Min. Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge IGSS V(BR) DSS IDSS (th) RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Typ. Max. Unit Conditions ± µa = ±V, =V 2 V ID= ma, =V µa = 2V, =V.3. V = V, ID= ma 3 8 mω ID=.5A, = 4.5V 7 24 mω ID=.5A, = 2.5V 22 3 mω ID=.8A, =.8V 3 6 mω ID=.3A, =.5V.6 S = V, ID=.5A pf = V 8 pf =V 5 pf f=mhz 5 ns VDD V 5 ns ID= A = 4.5V 2 ns RL Ω 3 ns RG=Ω.8 nc VDD V, = 4.5V.3 nc ID=.5A.3 nc RL 6.7Ω, RG= Ω Body diode characteristics (Source-drain) () Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD.2 V IS=.5A, =V <P-ch> Electrical characteristics () Parameter Symbol Min. Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge IGSS V(BR) DSS IDSS (th) RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Typ. Max. Unit Conditions ± µa = ±V, =V 2 V ID= ma, =V µa = 2V, =V.3. V = 6V, ID= ma 9 26 mω ID=.3A, = 4.5V mω ID=.6A, = 2.5V 4 6 mω ID=.6A, =.8V 53 6 mω ID=.2A, =.5V.4 S = 6V, ID=.3A 29 pf = 6V 28 pf = V 2 pf f=mhz 8 ns VDD 6V ns ID=.6A = 4.5V 3 ns RL Ω 9 ns RG= Ω 2.4 nc VDD 6V, = 4.5V.6 nc ID=.3A.4 nc RL 4.6Ω, RG= Ω Body diode characteristics (Source-drain) () Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD.2 V IS=.3A, =V c 29 ROHM Co., Ltd. All rights reserved. 2/ Rev.A

3 US6M Electrical characteristic curves <Nch> DRAIN CURRENT : ID[A].5.5 V GS= V V GS= 4.5V V GS= 2.5V V GS=.8V V GS=.3V V GS=.2V V GS=.5V DRAIN CURRENT : ID[A].5.5 V GS= 4.5V V GS=.8V V GS=.V V GS=.5V V GS=.3V DRAIN CURRENT : ID[A].. V DS= V Ta= 25 C Ta= 75 C Ta= 25 C Ta= - 25 C DRAIN-SOURCE VOLTAGE : V DS[V] DRAIN-SOURCE VOLTAGE : V DS[V] GATE-SOURCE VOLTAGE : V GS[V] Fig. Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics RESISTANCE : RDS(on)[mΩ] Ta= 25 C V GS=.5V V GS=.8V V GS= 2.5V V GS= 4.5V.. RESISTANCE : RDS(on)[mΩ] V GS= 4.5V Ta=25 C.. RESISTANCE : RDS(on)[mΩ] V GS= 2.5V Ta=25 C.. Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) RESISTANCE : RDS(on)[mΩ] V GS=.8V Ta=25 C.. RESISTANCE : R DS(on)[mΩ] V GS=.5V Ta=25 C.. FORWARD TRANSFER ADMITTANCE : Yfs [S] V DS= V Ta=25 C... Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) Fig.9 Forward Transfer Admittance vs. Drain Current c 29 ROHM Co., Ltd. All rights reserved. 3/ Rev.A

4 US6M REVERSE DRAIN CURRENT : Is [A]. V GS=V Ta=25 C Ta=-25 C RESISTANCE : RDS(ON)[mΩ] I D=.8A I D=.5A SWITCHING TIME : t [ns] t d (off) t d(on) t r t f V DD= V V GS =4.5V R G=Ω SOURCE-DRAIN VOLTAGE : V SD [V] Fig. Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : V GS[V] Fig. Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.2 Switching Characteristics GATE-SOURCE VOLTAGE : [V] CAPACITANCE : C [pf] 2 Coss V DD= V Crss I D=.5A R G=Ω f=mhz V GS=V Ciss TOTAL GATE CHARGE : Qg [nc] Fig.3 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : V DS[V] Fig.4 Typical Capacitance vs. Drain-Source Voltage c 29 ROHM Co., Ltd. All rights reserved. 4/ Rev.A

5 US6M <Pch> DRAIN CURRENT : -ID[A] V GS = -.8V V GS= -V V GS= -4.5V V GS = -2.5V V GS= -.5V V GS = -.2V DRAIN CURRENT : -I D[A] V GS = -4.5V V GS = -2.5V V GS = -.8V V GS= -.5V V GS = -.2V V GS = -.V DRAIN CURRENT : -I D[A].. V DS = -6V Ta= 25 C Ta= 75 C Ta= 25 C Ta= - 25 C DRAIN-SOURCE VOLTAGE : -V DS[V] DRAIN-SOURCE VOLTAGE : -V DS[V] GATE-SOURCE VOLTAGE : -V GS[V] Fig. Typical output characteristics(Ⅰ) Fig.2 Typical output characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics RESISTANCE : R DS(ON)[mΩ] V GS = -.5V V GS = -.8V V GS= -2.5V V GS= -4.5V.. DRAIN-CURRENT : -I D[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) RESISTANCE : R DS(ON)[mΩ] V GS= -4.5V Ta=25 C.. DRAIN-CURRENT : -I D[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) RESISTANCE : RDS(ON)[mΩ] V GS= -2.5V Ta=25 C.. DRAIN-CURRENT : -I D[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) RESISTANCE : R DS(ON)[mΩ] V GS = -.8V Ta=25 C.. RESISTANCE : R DS(ON)[mΩ] V GS = -.5V Ta=25 C.. FORWARD TRANSFER ADMITTANCE : Yfs [S] V DS = -6V Ta=25 C... DRAIN-CURRENT : -I D [A] DRAIN-CURRENT : -I D [A] DRAIN-CURRENT : -I D [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.9 Forward Transfer Admittance vs. Drain Current c 29 ROHM Co., Ltd. All rights reserved. 5/ Rev.A

6 US6M REVERSE DRAIN CURRENT : -Is [A]. V GS=V Ta=25 C Ta=-25 C..5.5 RESISTANCE : RDS(ON)[mΩ] I D= -.6A I D= -.3A SWITCHING TIME : t [ns] t f t d(off) V DD= -6V V GS= -4.5V R G=Ω t t d(on) r.. SOURCE-DRAIN VOLTAGE : -V SD [V] Fig. Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -V GS[V] Fig. Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -I D[A] Fig.2 Switching Characteristics 5 GATE-SOURCE VOLTAGE : -V GS [V] V DD= -6V I D= -.3A R G=Ω CAPACITANCE : C [pf] Coss Crss Ciss f=mhz V GS=V TOTAL GATE CHARGE : Qg [nc] DRAIN-SOURCE VOLTAGE : -V DS[V] Fig.3 Dynamic Input Characteristics Fig.4 Typical Capacitance vs. Drain-Source Voltage c 29 ROHM Co., Ltd. All rights reserved. 6/ Rev.A

7 US6M Measurement circuit <Nch> ID Pulse Width RG D.U.T. RL VDD 9% 5% 5% % % % 9% 9% td(on) tr td(off) tr ton toff Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms VG IG (Const.) ID D.U.T. RL Qgs Qgd Qg RG VDD Charge Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform <Pch> ID RL Pulse Width % 5% 9% 5% D.U.T. % % RG VDD td(on) 9% 9% tr td(off) tr ton toff Fig.3- Switching Time Measurement Circuit Fig.3-2 Switching Waveforms ID RL VG Qg IG(Const.) D.U.T. RG Qgs Qgd VDD Charge Fig.4- Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. c 29 ROHM Co., Ltd. All rights reserved. 7/ Rev.A

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