MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z
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1 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK25, 2SK25-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK25 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES Low On-Resistance Low Ciss RDS(on) =. Ω MAX. VGS = V, ID =. A) RDS(on)2 =.5 Ω MAX. (@ VGS = V, ID =. A) QUALITY GRADE Standard Ciss = 57 pf TYP. Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-29) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications..6 ±.2 PACKAGE DIMENSIONS (in millimeters).3 MAX. 6.5 ±.2 5. ± MAX. 5.5 ± MIN. 2.3 ±.2.5 ±..6 ±..6 ± Gate 2. Drain 3. Source. Fin (Drain) TO-25 (MP-3).75 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage VDSS 6 V Gate to Source Voltage VGSS ±2 V Drain Current (DC) ID(DC) ±8. A Drain Current (pulse)* ID(pulse) ±32 A Total Power Dissipation (Tc = 25 C) PT 2 W Total Power Dissipation (Ta = 25 C) PT2. W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C Single Avalanche Current** IAS 8. A Single Avalanche Energy** EAS 6. mj.3 MAX..8.3 MAX. 6.5 ±.2 5. ± ±.2. MAX. 2. MIN..9 MAX. 2.3 ±.2.8 MAX.. MIN..5 TYP Gate 2. Drain 3. Source. Fin (Drain) TO-252 (MP-3Z).5 ±..5 * PW µs, Duty Cycle % ** Starting Tch = 25 C, RG = 25 Ω, VGS = 2 V Gate Drain Body Diode Gate Protection Diode Source The information in this document is subject to change without notice. Document No. D327EJVDS (st edition) (Previous No. TC-296) Date Published December 997 N CP(K) Printed in Japan 99
2 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain to Source On-State Resistance RDS(on).7. Ω VGS = V, ID =. A Drain to Source On-State Resistance RDS(on)2..5 Ω VGS = V, ID =. A Gate to Source Cutoff Voltage VGS(off) V VDS = V, ID = ma Forward Transfer Admittance yfs S VDS = V, ID =. A Drain Leakage Current IDSS µa VDS = 6 V, VGS = Gate to Source Leakage Current IGSS ± µa VGS = ±2 V, VDS = Input Capacitance Ciss 57 pf VDS = V Output Capacitance Coss 29 pf VGS = Reverse Transfer Capacitance Crss 75 pf f = MHz Turn-On Delay Time td(on) 5 ns ID =. A Rise Time tr 6 ns VGS(on) = V Turn-Off Delay Time td(off) 75 ns VDD = 3 V Fall Time tf ns R G = Ω Total Gate Charge QG 2 nc ID = 8. A Gate to Source Charge QGS 2. nc VDD = 8 V Gate to Drain Charge QGD 6.5 nc VGS = V Body Diode Forward Voltage VF(S-D). V IF = 8. A, VGS = Reverse Recovery Time trr 85 ns IF = 8. A, VGS = Reverse Recovery Charge Qrr 2 nc di/dt = A/µs Test Circuit Avalanche Capability Test Circuit 2 Switching Time PG VGS = 2 V D.U.T. RG = 25 Ω 5 Ω L VDD PG. RG D.U.T. RG = Ω RL VDD VGS Wave Form VGS % ID 9 % VGS (on) 9 % 9 % VDD ID IAS BVDSS VDS VGS t ID Wave Form % td (on) tr ID td (off) % tf Starting Tch t = µ s Duty Cycle % ton toff Test Circuit 3 Gate Charge D.U.T. IG = 2 ma RL PG. 5 Ω VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2
3 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dt - Percentage of Rated Power - % PT - Total Power Dissipation - W Tc - Case Temperature - C Tc - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RDS (on) Limited (at VGS = V) ID (pulse) ID (DC) DC ms ms s µ PW = s µ VGS = V VGS = 6 V VGS = V Power Dissipation Limited 8 TC = 25 C Single Pulse VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS VDS = V Ta = - 25 C 25 C 25 C VGS - Gate to Source Voltage - V 3
4 rth(t) - Transient Thermal Resistance - C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-a) = 25 C/W Rth(ch-c) = 6.25 C/W. Single Pulse. µ µ m m m PW - Pulse Width - s IyfsI- Forward Transfer Admittance - S. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Ta = - 25 C 25 C 75 C 25 C VDS = V RDS(on) - Drain to Source On-State Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID =. A VGS - Gate to Source Voltage - V 25 RDS(on) - Drain to Source On-State Resistance - mω DRAIN TO SOURCE ON-STATE RESITANCE vs. DRAIN CURRENT VGS = V VGS = V VGS(off) - Gate to Source Cutoff Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = V ID = ma Tch - Channel Temperature - C
5 RDS(on) - Drain to Source On-State Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS = V VGS = V 2 ID =. A ISD - Diode Forward Current - A V SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS =. 2. Tch - Channel Temperature - C VSD - Source to Drain Voltage - V Ciss, Coss, Crss - Capacitance - pf CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Crss Coss VDS - Drain to Source Voltage - V VGS = f = MHz Ciss td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS tf td(off) tr td(on) VDD = 3 V VGS = V RG. = Ω.. trr - Reverse Recovery time - ns REVERSE RECOVERY TIME vs. DRAIN CURRENT di/dt = 5 A/ µ s VGS =.. VDS - Drain to Source Voltage - V VDS DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS ID = 8. A VDD = 8 V VGS - Gate to Source Voltage - V Qg - Gate Charge - nc 5
6 IAS - Single Avalanche Energy - mj. SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD IAS = 8. A EAS = 6. mj VDD = 3 V VGS = 2 V RG. = 25 Ω µ µ m m dt - Energy Derating Factor - % SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 3 V RG = 25 Ω VGS = 2 V IAS 8. A L - Inductive Load - H Starting Tch - Starting Channel Temperature - C 6
7 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-22 IEI-29 IEI-27 IEI-23 MEI-22 MF-3 TEA-3 TEA-35 TEA-37 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7
8 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M 96.5
9 This datasheet has been download from: Datasheets for electronics components.
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