MOS FIELD EFFECT TRANSISTOR NP110N04PDG

Transcription

1 DATA SHEET MOS FIELD EFFECT TRANSISTOR NPN4PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NPN4PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE NPN4PDG-E-AZ Note NPN4PDG-E-AZ Note Pure Sn (Tin) Tape 8 p/reel TO-63 (MP-5ZP) typ..5 g Note See TAPE INFORMATION FEATURES Channel temperature 75 degree rating Super low on-state resistance RDS(on) =.8 m MAX. (VGS = V, ID = 55 A) RDS(on) = 3. m MAX. (VGS = 4.5 V, ID = 55 A) (TO-63) ABSOLUTE MAXIMUM RATINGS (TA = 5 C) Drain to Source Voltage (VGS = V) VDSS 4 V Gate to Source Voltage (VDS = V) VGSS V Drain Current (DC) (TC = 5 C) ID(DC) A Drain Current (pulse) Note ID(pulse) 44 A Total Power Dissipation (TA = 5 C) PT.8 W Total Power Dissipation (TC = 5 C) PT 88 W Channel Temperature Tch 75 C Storage Temperature Tstg 55 to +75 C Repetitive Avalanche Current Note IAR 7 A Repetitive Avalanche Energy Note EAR 58 mj Notes. PW s, Duty Cycle %. Tch 5 C, VDD = V, RG = 5, VGS = V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C).5 C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 C/W Document No. D756EJVDS (nd edition) Date Published June 6 NS CP(K) Printed in Japan The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 5

2 NPN4PDG ELECTRICAL CHARACTERISTICS (TA = 5 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 4 V, VGS = V A Gate Leakage Current IGSS VGS = V, VDS = V na Gate to Source Threshold Voltage Note VGS(th) VDS = VGS, ID = 5 A.5..5 V Forward Transfer Admittance Note yfs VDS = V, ID = 55 A S Drain to Source On-state Resistance Note RDS(on) VGS = V, ID = 55 A.4.8 m RDS(on) VGS = 4.5 V, ID = 55 A. 3. m Input Capacitance Ciss VDS = 5 V pf Output Capacitance Coss VGS = V 36 3 pf Reverse Transfer Capacitance Crss f = MHz 8 6 pf Turn-on Delay Time td(on) VDD = V, ID = 55 A 46 ns Rise Time tr VGS = V 4 35 ns Turn-off Delay Time td(off) RG = 6 ns Fall Time tf 9 6 ns Total Gate Charge QG VDD = 3 V 3 39 nc Gate to Source Charge QGS VGS = V 4 nc Gate to Drain Charge QGD ID = A 75 nc Body Diode Forward Voltage Note VF(S-D) IF = A, VGS = V.9.5 V Reverse Recovery Time trr IF = A, VGS = V 55 ns Reverse Recovery Charge Qrr di/dt = A/ s 7 nc Note Data Sheet D756EJVDS

3 NPN4PDG TYPICAL CHARACTERISTICS (TA = 5 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dt - Percentage of Rated Power - % PT - Total Power Dissipation - W TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA RDS(on) Limited (at VGS = V) ID(pulse) = 44 A ID(DC) = A Power Dissipation Limited PW = s ms ms DC TC = 5 C Single pulse.. VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W Rth(ch-A) = 83.3 C/W Rth(ch-C) =.5 C/W.. Single pulse. m m m PW - Pulse Width - s Data Sheet D756EJVDS 3

4 NPN4PDG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS VGS = V 4.5 V. TA = 55 C 5 C 75 C 5 C 75 C. VDS = V VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(th) - Gate to Source Threshold Voltage - V VDS = VGS ID = ma Tch - Channel Temperature - C yfs - Forward Transfer Admittance - S TA = 55 C 5 C 75 C 5 C 75 C V DS = V. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 5 VGS = 4.5 V V. RDS(on) - Drain to Source On-state Resistance - m ID = A 55 A A 5 5 VGS - Gate to Source Voltage - V 4 Data Sheet D756EJVDS

5 NPN4PDG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m VGS = 4.5 V V ID = 55 A Ciss, Coss, Crss - Capacitance - pf VGS = V f = MHz Crss Ciss Coss. Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns td(off) tr td(on) tf VDD = V VGS = V RG = VDS - Drain to Source Voltage - V VDD = 3 V V 8 V VDS VGS ID = A VGS - Gate to Source Voltage - V QG - Gate Charge - nc SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT IF - Diode Forward Current - A. VGS = V V trr - Reverse Recovery Time - ns di/dt = A/ s VGS = V.5.5. VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet D756EJVDS 5

6 NPN4PDG PACKAGE DRAWING (Unit: mm) TO-63 (MP-5ZP) EQUIVALENT CIRCUIT Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D756EJVDS

7 NPN4PDG TAPE INFORMATION There are two types (-E, -E) of taping depending on the direction of the device. MARKING INFORMATION RECOMMENDED SOLDERING CONDITIONS The NPN4PDG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual ( Soldering Method Infrared reflow Partial heating Soldering Conditions Maximum temperature (Package's surface temperature): 6 C or below Time at maximum temperature: seconds or less Time of temperature higher than C: 6 seconds or less Preheating time at 6 to 8 C: 6 to seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass):.% or less Maximum temperature (Pin temperature): 35 C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux:.% (wt.) or less Recommended Condition Symbol IR6--3 P35 Caution Do not use different soldering methods together (except for partial heating). Data Sheet D756EJVDS 7

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