The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Part No. Lead Plating Packing Package

Transcription

1 NP8N4TUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R7DS54EJ Rev.. Sep 3, Description The NP8N4TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance R DS(on) =.5 m MAX. ( V GS = V, I D = 9 A ) Low C iss : C iss = 5 pf TYP. ( V DS = 5 V ) Designed for automotive application and AEC-Q qualified Ordering Information Tape 8 p/reel Part No. Lead Plating Packing Package NP8N4TUK-E-AY Pure Sn (Tin) Taping (E type) TO-63-7pin (MP-5ZT) NP8N4TUK-E-AY Taping (E type) Note:. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (T A = 5C) Item Symbol Ratings Unit Drain to Source Voltage (V GS = V) V DSS 4 V Gate to Source Voltage (V DS = V) V GSS V Drain Current (DC) (T C = 5C) I D(DC) 8 A Drain Current (pulse) I D(pulse) 7 A Total Power Dissipation (T C = 5C) P T 348 W Total Power Dissipation (T A = 5C) P T.8 W Channel Temperature T ch 75 C Storage Temperature T stg 55 to 75 C Repetitive Avalanche Current I AR 7 A Repetitive Avalanche Energy E AR 58 mj Thermal Resistance Channel to Case Thermal Resistance R th(ch-c).43 C/W Channel to Ambient Thermal Resistance R th(ch-a) 83.3 C/W Notes:. T C = 5C, PW s, Duty Cycle %. R G = 5 V GS = V R7DS54EJ Rev.. Page of 6 Sep 3,

2 NP8N4TUK Electrical Characteristics (T A = 5C) Item Symbol MIN. TYP. MAX. Unit Test Conditions Zero Gate Voltage Drain Current I DSS A V DS = 4 V, V GS = V Gate Leakage Current I GSS ± na V GS = V, V DS = V Gate to Source Threshold Voltage V GS(th) V V DS = V GS, ID = 5 A Forward Transfer Admittance y fs 75 5 S V DS = 5 V, I D = 9 A Drain to Source On-state R DS(on).85.5 m V GS = V, I D = 9 A Resistance Input Capacitance C iss pf V DS = 5 V, Output Capacitance C oss 6 4 pf V GS = V, Reverse Transfer Capacitance C rss pf f = MHz Turn-on Delay Time t d(on) 38 9 ns V DD = V, I D = 9 A, Rise Time t r 6 ns V GS = V, Turn-off Delay Time t d(off) 4 8 ns R G = Fall Time t f 5 ns Total Gate Charge Q G nc V DD = 3 V, Gate to Source Charge Q GS 5 nc V GS = V, Gate to Drain Charge Q GD 48 nc I D = 8 A Body Diode Forward Voltage V F(S-D).9.5 V I F = 8 A, V GS = V Reverse Recovery Time t rr 83 ns I F = 8 A, V GS = V, Reverse Recovery Charge Q rr 3 nc di/dt = A/ s Note:. test R7DS54EJ Rev.. Page of 6 Sep 3,

3 NP8N4TUK Typical Characteristics (T A = 5C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE T C - Case Temperature - C T C - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA ID(Pulse) = 7 A RDS(ON) Limited (VGS = V) ID(DC) = 8 A Power Dissipation Limited Secondary Brakedown Limited. TC = 5C Single Pulse. V DS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH R th(ch-a) = 83.3C/W R th(ch-c) =.43CW.. Single pulse. m m m m PW - Pulse Width - s R7DS54EJ Rev.. Page 3 of 6 Sep 3,

4 NP8N4TUK DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS TA = 55C 5 C 85C 5C 75C 3. VGS = V. VDS = V V DS - Drain to Source Voltage - V V GS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 3 VDS = VGS ID = 5 A TA = 55C 5C 85 C 5 C 75 C VDS = 5 V T ch - Channel Temperature - C I D - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3 3 V GS = V Puls ed ID = 9 A 5 5 I D - Drain Current - A V GS - Gate to Source Voltage - V R7DS54EJ Rev.. Page 4 of 6 Sep 3,

5 NP8N4TUK DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 3 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss Coss VGS = V ID = 9 A VGS = V f = MHz Crss. T ch - Channel Temperature - C V DS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS tf VDD = V VGS = V RG = V DD = 3 V V 8 V 4 td(off) td(on) 5 V GS 8 6 tr 4. 5 V DS I D = 8 A 5 5 I D - Drain Current - A Q G - Gate Charge - nc SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT V V GS = V Puls ed di/dt = A/µs VGS = V. V F(S-D) - Source to Drain Voltage - V I F - Drain Current - A R7DS54EJ Rev.. Page 5 of 6 Sep 3,

6 NP8N4TUK Package Drawing (Unit: mm) TO-63-7pin (MP-5ZT) (Mass:.5 g TYP.) TYP to TYP Gate, 3, 5, 6, 7. Source 4, 8. Fin (Drain) Equivalent Circuit Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R7DS54EJ Rev.. Page 6 of 6 Sep 3,

7 Revision History NP8N4TUK Data Sheet Description Rev. Date Page Summary. Sep 3, First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C -

8 Renesas Electronics Corporation. All rights reserved. Colophon.