DATA SHEET SWITCHING N-CHANNEL POWER MOSFET
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1 DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA7UTA SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The μ PA7UTA is N-channel MOSFET designed for DC/DC converter applications. FEATURES Low on-state resistance RDS(on) = 3.3 mω MAX. ( = V, ID = 5 A) RDS(on) = 5. mω MAX. ( =.5 V, ID = 5 A) Low input capacitance Ciss = pf TYP. ( = 5 V, = V) Thin type surface mount package with heat spreader (8-pin HVSON) RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 5 C, All terminals are connected.) Drain to Source Voltage ( = V) S 3 V Gate to Source Voltage ( = V) S ± V Drain Current (DC) ID(DC) ±9 A Drain Current (pulse) Note ID(pulse) ±7 A Total Power Dissipation Note PT.5 W Total Power Dissipation (PW = sec) Note PT. W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C Single Avalanche Current Note3 IAS 9 A Single Avalanche Energy Note3 EAS 8 mj PACKAGE DRAWING (Unit: mm). M ±. 5. ±.. ±. 3.5 ±.. ± ±.5. MAX..7 ±.5 EQUIVALENT CIRCUIT Drain 5 ±. 5.5 ±.. S,, 3 : Source : Gate 5,, 7, 8: Drain THERMAL RESISTANCE Channel to Ambient Thermal Resistance Note Rth(ch-A) 83.3 C/W Channel to Case (Drain) Thermal Resistance Rth(ch-C).5 C/W Gate Body Diode Notes. PW μs, Duty Cycle %. Mounted on a glass epoxy board of 5. mm x 5. mm x.8 mm 3. Starting Tch = 5 C, = 5 V, RG = 5 Ω, = V, L = μh Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G897EJ (st edition) Date Published April 7 NS CP(K) Printed in Japan, 7
2 μ PA7UTA ELECTRICAL CHARACTERISTICS (TA = 5 C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS = 3 V, = V μa Gate Leakage Current IGSS = ± V, = V ± na Gate to Source Cut-off Voltage (off) = V, ID = ma.5.5 V Forward Transfer Admittance Note yfs = V, ID = 5 A 3 S Drain to Source On-state Resistance Note RDS(on) = V, ID = 5 A mω RDS(on) =.5 V, ID = 5 A mω Input Capacitance Ciss = 5 V, pf Output Capacitance Coss = V, 835 pf Reverse Transfer Capacitance Crss f = MHz 3 pf Turn-on Delay Time td(on) = 5 V, ID = 5 A, ns Rise Time tr = V, 9. ns Turn-off Delay Time td(off) RG = Ω 9 ns Fall Time tf 8 ns Total Gate Charge QG = 5 V, 35 nc Gate to Source Charge QGS = 5 V, 3 nc Gate to Drain Charge QGD ID = 9 A nc Body Diode Forward Voltage Note VF(S-D) IF = 9 A, = V.8 V Reverse Recovery Time trr IF = 9 A, = V, ns Reverse Recovery Charge Qrr di/dt = A/μs 3 nc Gate Resistance RG f = MHz.8 Ω Note TEST CIRCUIT AVALANCHE CAPABILITY TEST CIRCUIT SWITCHING TIME PG. = V D.U.T. RG = 5 Ω 5 Ω L PG. RG D.U.T. RL Wave Form % 9% 9% 9% ID IAS BS τ Wave Form % % td(on) tr td(off) tf Starting Tch τ = μs Duty Cycle % ton toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = ma RL PG. 5 Ω Data Sheet G897EJ
3 μ PA7UTA TYPICAL CHARACTERISTICS (TA = 5 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA dt - Percentage of Rated Power - % 8 8. ID(pulse) ID(DC) RDS(on) Limited (V GS = i V) i s i mis i mis Power Dssipation Limited Single Pulse Mounted on a glass epoxy board of 5. mm x 5. mm x.8 mm PW = 3 μs.. i mis TA - Ambient Temperature - C - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W. Rth(ch-A) = 83.3 C/Wi Rth(ch-C) =.5 C/Wi Single Pulse Rth(ch-A): Mounted on a glass epoxy board of 5. mm x 5. mm x.8 mm. μ m m m PW - Pulse Width - s DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 9 3 V.5 V. V 3. V 3.8 V 3. V 3. V = 3. V TA = 55 C 5 C 75 C 5 C = V Drain to Source Voltage - V - Gate to Source Voltage - V Data Sheet G897EJ 3
4 μ PA7UTA GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT (off) - Gate to Source Cut-off Voltage - V = V ID = ma yfs - Forward Transfer Admittance - S. TA = 55 C 5 C 75 C 5 C = V.. Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mω 8 =.5 V V. RDS(on) - Drain to Source On-state Resistance - mω 5 5 ID = 5 A Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mω 8 =.5 V V ID = 5 A Ciss, Coss, Crss - Capacitance - pf = V f = MHz Ciss Coss Crss.. Tch - Channel Temperature - C - Drain to Source Voltage - V Data Sheet G897EJ
5 μ PA7UTA DYNAMIC INPUT/OUTPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE - Gate to Source Voltage - V = V 5 V V ID = 9 A 3 IF - Diode Forward Current - A = V V QG - Gate Charge - nc VF(S-D) - Source to Drain Voltage - V ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE μ PA7UTA-E-AZ Note Sn-Bi μ PA7UTA-E-AZ Note 8-pin HVSON μ PA7UTA-E-AY Note Tape 3 p/reel. g TYP. Pure Sn μ PA7UTA-E-AY Note Note Pb-free (This product does not contain Pb in the external electrode.) Data Sheet G897EJ 5
6 μ PA7UTA The information in this document is current as of April, 7. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) () "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. () "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E. -
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