DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Transcription

1 DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS FIELD EFFECT TRANSISTOR 2SK34 DESCRIPTION The 2SK34 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER PACKAGE 2SK34 Isolated TO-22 FEATURES Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = V, ID = 2. A) Low gate charge: QG = 5 nc TYP. (VDD = 45 V, VGS = V, ID = 4. A) Gate voltage rating: ±3 V Avalanche capability ratings Isolated TO-22 package (Isolated TO-22) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = V) VDSS 6 V Gate to Source Voltage (VDS = V) VGSS ±3 V Drain Current (DC) (TC = 25 C) ID(DC) ±4. A Drain Current (pulse) Note ID(pulse) ±6 A Total Power Dissipation (TC = 25 C) PT 3 W Total Power Dissipation (TA = 25 C) PT2 2. W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C Single Avalanche Current Note2 IAS 4. A Single Avalanche Energy Note2 EAS.7 mj Notes. PW µs, Duty cycle % 2. Starting Tch = 25 C, VDD = 5 V, RG = 25 Ω, VGS = 2 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. Date Published Printed in Japan D3337EJ2VDS (2nd edition) January 2 NS CP(K) The mark shows major revised points. 998

2 ELECTRICAL CHARACTERISTICS (TA = 25 C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current IDSS VDS = 6 V, VGS = V µa Gate Leakage Current IGSS VGS = ±3 V, VDS = V ± µa Gate Cut-off Voltage VGS(off) VDS = V, ID = ma V Forward Transfer Admittance yfs VDS = V, ID = 2. A. 5 S Drain to Source On-state Resistance RDS(on) VGS = V, ID = 2. A Ω Input Capacitance Ciss VDS = V 55 pf Output Capacitance Coss VGS = V 5 pf Reverse Transfer Capacitance Crss f = MHz 3 pf Turn-on Delay Time td(on) VDD = 5 V, ID = 2. A 2 ns Rise Time tr VGS(on) = V 6 ns Turn-off Delay Time td(off) RG = Ω 35 ns Fall Time tf RL = Ω 2 ns Total Gate Charge QG VDD = 45 V 5 nc Gate to Source Charge QGS VGS = V 4 nc Gate to Drain Charge QGD ID = 4. A 4.4 nc Body Diode Forward Voltage VF(S-D) IF = 4. A, VGS = V.9 V Reverse Recovery Time trr IF = 4. A, VGS = V.3 µs Reverse Recovery Charge Qrr di/dt = 5 A/µs 4.3 µc TEST CIRCUIT AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω PG. 5 Ω VGS = 2 V BVDSS IAS ID VDD VDS L VDD VGS PG. τ RG D.U.T. RL VDD VGS Wave Form ID Wave Form VGS ID % % 9% VGS(on) ID 9% 9% td(on) tr td(off) t f % Starting Tch τ = µ s Duty Cycle % ton toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 ma RL PG. 5 Ω VDD 2 Data Sheet D3337EJ2VDS

3 TYPICAL CHARACTERISTICS (TA = 25 C ) dt - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Tch - Channel Temperature - C PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA RD(on) Limited ID(DC) Power Dissipation Limited ID(pulse) 3 ms ms ms ms PW = ms ms. TC = 25 C Single Pulse VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W.. m m m m Rth(CH-A) = 62.5 C/W Rth(CH-C) = 4.7 C/W Single Pulse m PW - Pulse Width - s Data Sheet D3337EJ2VDS 3

4 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 5 VGS = V 8 V 6 V.. Tch = 25 C 75 C 25 C -25 C VDS = V VDS - Drain to Source Voltage - V 5 VGS - Gate to Source Voltage - V 5 VGS(off) - Gate to Source Cutoff Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = V ID = ma yfs - Forward Transfer Admittance - S. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Tch = -25 C 25 C 75 C 25 C VDS = V... Tch - Channel Temperature - C RDS (on) - Drain to Source On-State Resistance - W DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 4. A 5 5 VGS - Gate to Source Voltage - V 2. A RDS(on) - Drain to Source On-State Resistance - W DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = V VGS = 2 V. 4 Data Sheet D3337EJ2VDS

5 RDS (on) - Drain to Source On-State Resistance - W DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE -5 ID = 4. A 2. A VGS = V 5 5 Tch - Channel Temperature - C ISD - Diode Forward Current - A.. SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = V.5 V. VSD - Source to Drain Voltage - V.5 Ciss, Coss, Crss - Capacitance - pf. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = V f = MHZ VDS - Drain to Source Voltage - V Ciss Coss Crss td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS td(off) tf td(on) VDD = 5 V VGS = V RG = W.. tr trr - Reverse Recovery Time - ns REVERSE RECOVERY TIME vs. DRAIN CURRENT di/dt = 5 A/mS VGS = V VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 6 ID = 4 A 4 VDD = 45 V 3 V 5 V VDS VGS VGS - Gate to Source Voltage - V Qg - Gate Charge - nc Data Sheet D3337EJ2VDS 5

6 IAS - Single Avalanche Current - A. SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD IAS = 4 A RG = 25 W VDD = 5 V VGS = 2 V Starting Tch = 25 C. m m m m L - Inductive Load - H EAS =.7 mj Energy Derating Factor - % SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 5 V RG = 25 W VGS = 2 V IAS 4 A Starting Tch - Starting Channel Temperature - C PACKAGE DRAWINGS (Unit: mm) EQUIVALENT CIRCUIT Isolated TO-22 (MP-45F) Drain.±.3 φ 3.2±.2 4.5±.2 2.7±.2 Gate Body Diode 5.±.3 3±. 2.±.2 Gate Protection Diode Source 4± MIN..7±..3±.2.5± TYP TYP. 2.5±..65±..Gate 2.Drain 3.Source 2 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D3337EJ2VDS

7 [MEMO] Data Sheet D3337EJ2VDS 7

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9 This datasheet has been download from: Datasheets for electronics components.