DATA SHEET SWITCHING P-CHANNEL POWER MOS FET

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1 DATA SHEET 参考資料 MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE Isolated TO-22 (MP-45F) FEATURES Super low on-state resistance RDS(on) = 2 mω MAX. (VGS = V, ID = 8 A) RDS(on)2 = 3 mω MAX. (VGS = 4. V, ID = 8 A) (Isolated TO-22) Low C iss: C iss = 46 pf TYP. Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = V) S 6 V Gate to Source Voltage ( = V) VGSS m2 V Drain Current (DC) (TC = 25 C) ID(DC) m36 A Drain Current (pulse) Note ID(pulse) m44 A Total Power Dissipation (TC = 25 C) PT 32 W Total Power Dissipation (TA = 25 C) PT2 2. W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C Single Avalanche Current Note2 IAS 36 A Single Avalanche Energy Note2 EAS 3 mj Notes. PW µs, Duty Cycle % 2. Starting Tch = 25 C, = 3 V, RG = 25 Ω, VGS = 2 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D72EJ (st edition) Date Published June 24 NS CP(K) Printed in Japan 24

2 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS = 6 V, VGS = V µa Gate Leakage Current IGSS VGS = m2 V, = V m µa Gate Cut-off Voltage VGS(off) = V, ID = ma V Forward Transfer Admittance Note yfs = V, ID = 8 A 22 S Drain to Source On-state Resistance Note RDS(on) VGS = V, ID = 8 A 7 2 mω RDS(on)2 VGS = 4. V, ID = 8 A 22 3 mω Input Capacitance Ciss = V 46 pf Output Capacitance Coss VGS = V 82 pf Reverse Transfer Capacitance Crss f = MHz 33 pf Turn-on Delay Time td(on) = 3 V, ID = 8 A 4 ns Rise Time tr VGS = V 4 ns Turn-off Delay Time td(off) RG = Ω 3 ns Fall Time tf 5 ns Total Gate Charge QG = 48 V 87 nc Gate to Source Charge QGS VGS = V 5 nc Gate to Drain Charge QGD ID = 36 A 22 nc Body Diode Forward Voltage Note VF(S-D) IF = 36 A, VGS = V. V Reverse Recovery Time trr IF = 36 A, VGS = V 52 ns Reverse Recovery Charge Qrr di/dt = A/µs 84 nc Note TEST CIRCUIT AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME PG. VGS = 2 V D.U.T. RG = 25 Ω 5 Ω L PG. RG D.U.T. RL VGS Wave Form VGS( ) % ( ) VGS 9% ID IAS BS VGS( ) τ Wave Form 9% % % td(on) tr td(off) t f 9% Starting Tch τ = µ s Duty Cycle % ton toff TEST CIRCUIT 3 GATE CHARGE IG = 2 ma D.U.T. RL PG. 5 Ω 2 Data Sheet D72EJ

3 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dt - Percentage of Rated Power - % PT - Total Power Dissipation - W TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA - PW = µs ID(pulse) µs RDS(on) Limited ID(DC) DC ms Power Disipation Limited ms TC = 25 C Single pulse ms TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W.. Rth(ch-A) = 62.5 C/W Rth(ch-C) = 3.9 C/W Single pulse µ µ m m m PW - Pulse Width - s Data Sheet D72EJ 3

4 FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TA = 55 C 25 C 75 C 25 C = V VGS = V V 4 V VGS - Gate to Source Voltage - V yfs - Forward Transfer Admittance - S... FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT = V TA = 55 C 25 C 75 C 25 C RDS(on) - Drain to Source On-state Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 28.8 A 8 A 7.2 A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 4. V 4.5 V V VGS(off) - Gate Cut-off Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE = V ID = ma Tch - Channel Temperature - C 4 Data Sheet D72EJ

5 RDS(on) - Drain to Source On-state Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = 8 A VGS = 4. V 4.5 V V IF - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = V 4 V V Tch - Channel Temperature - C VF(S-D) - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Ciss, Coss, Crss - Capacitance - pf VGS = V f = MHz Ciss Coss Crss td(on), tr, td(off), tf - Switching Time - ns td(off) td(on) = 3 V VGS = V RG = Ω tf tr DYNAMIC INPUT/OUTPUT CHARACTERISTICS SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD = 48 V 3 V 2 V VGS ID = 25 A VGS - Gate to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = A/µs VGS = V. IF - Diode Forward Current - A QG - Gate Charge - nc Data Sheet D72EJ 5

6 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR IAS - Single Avalanche Current - A - - IAS = 36 A EAS = 3 mj - = 3 V RG = 25 Ω VGS = 2 V Starting Tch = 25 C - µ µ µ m m L - Inductive Load - H Energy Derating Factor - % = 3 V RG = 25 Ω VGS = 2 V IAS 36 A Starting Tch - Starting Channel Temperature - C 6 Data Sheet D72EJ

7 PACKAGE DRAWING (Unit: mm) Isolated TO-22 (MP-45F).±.3 4.5±.2 φ 3.2±.2 2.7±.2 5.±.3 4±.2 3±. 3.5 MIN. 2.±.2.7±..3±.2.5± ±. 2.5± Gate 2. Drain 3. Source EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this debice. Data Sheet D72EJ 7

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