DATA SHEET SWITCHING P-CHANNEL POWER MOS FET
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1 DATA SHEET 参考資料 MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE Isolated TO-22 (MP-45F) FEATURES Super low on-state resistance RDS(on) = 2 mω MAX. (VGS = V, ID = 8 A) RDS(on)2 = 3 mω MAX. (VGS = 4. V, ID = 8 A) (Isolated TO-22) Low C iss: C iss = 46 pf TYP. Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = V) S 6 V Gate to Source Voltage ( = V) VGSS m2 V Drain Current (DC) (TC = 25 C) ID(DC) m36 A Drain Current (pulse) Note ID(pulse) m44 A Total Power Dissipation (TC = 25 C) PT 32 W Total Power Dissipation (TA = 25 C) PT2 2. W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C Single Avalanche Current Note2 IAS 36 A Single Avalanche Energy Note2 EAS 3 mj Notes. PW µs, Duty Cycle % 2. Starting Tch = 25 C, = 3 V, RG = 25 Ω, VGS = 2 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D72EJ (st edition) Date Published June 24 NS CP(K) Printed in Japan 24
2 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS = 6 V, VGS = V µa Gate Leakage Current IGSS VGS = m2 V, = V m µa Gate Cut-off Voltage VGS(off) = V, ID = ma V Forward Transfer Admittance Note yfs = V, ID = 8 A 22 S Drain to Source On-state Resistance Note RDS(on) VGS = V, ID = 8 A 7 2 mω RDS(on)2 VGS = 4. V, ID = 8 A 22 3 mω Input Capacitance Ciss = V 46 pf Output Capacitance Coss VGS = V 82 pf Reverse Transfer Capacitance Crss f = MHz 33 pf Turn-on Delay Time td(on) = 3 V, ID = 8 A 4 ns Rise Time tr VGS = V 4 ns Turn-off Delay Time td(off) RG = Ω 3 ns Fall Time tf 5 ns Total Gate Charge QG = 48 V 87 nc Gate to Source Charge QGS VGS = V 5 nc Gate to Drain Charge QGD ID = 36 A 22 nc Body Diode Forward Voltage Note VF(S-D) IF = 36 A, VGS = V. V Reverse Recovery Time trr IF = 36 A, VGS = V 52 ns Reverse Recovery Charge Qrr di/dt = A/µs 84 nc Note TEST CIRCUIT AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME PG. VGS = 2 V D.U.T. RG = 25 Ω 5 Ω L PG. RG D.U.T. RL VGS Wave Form VGS( ) % ( ) VGS 9% ID IAS BS VGS( ) τ Wave Form 9% % % td(on) tr td(off) t f 9% Starting Tch τ = µ s Duty Cycle % ton toff TEST CIRCUIT 3 GATE CHARGE IG = 2 ma D.U.T. RL PG. 5 Ω 2 Data Sheet D72EJ
3 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dt - Percentage of Rated Power - % PT - Total Power Dissipation - W TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA - PW = µs ID(pulse) µs RDS(on) Limited ID(DC) DC ms Power Disipation Limited ms TC = 25 C Single pulse ms TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W.. Rth(ch-A) = 62.5 C/W Rth(ch-C) = 3.9 C/W Single pulse µ µ m m m PW - Pulse Width - s Data Sheet D72EJ 3
4 FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TA = 55 C 25 C 75 C 25 C = V VGS = V V 4 V VGS - Gate to Source Voltage - V yfs - Forward Transfer Admittance - S... FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT = V TA = 55 C 25 C 75 C 25 C RDS(on) - Drain to Source On-state Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 28.8 A 8 A 7.2 A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 4. V 4.5 V V VGS(off) - Gate Cut-off Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE = V ID = ma Tch - Channel Temperature - C 4 Data Sheet D72EJ
5 RDS(on) - Drain to Source On-state Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = 8 A VGS = 4. V 4.5 V V IF - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = V 4 V V Tch - Channel Temperature - C VF(S-D) - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Ciss, Coss, Crss - Capacitance - pf VGS = V f = MHz Ciss Coss Crss td(on), tr, td(off), tf - Switching Time - ns td(off) td(on) = 3 V VGS = V RG = Ω tf tr DYNAMIC INPUT/OUTPUT CHARACTERISTICS SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD = 48 V 3 V 2 V VGS ID = 25 A VGS - Gate to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = A/µs VGS = V. IF - Diode Forward Current - A QG - Gate Charge - nc Data Sheet D72EJ 5
6 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR IAS - Single Avalanche Current - A - - IAS = 36 A EAS = 3 mj - = 3 V RG = 25 Ω VGS = 2 V Starting Tch = 25 C - µ µ µ m m L - Inductive Load - H Energy Derating Factor - % = 3 V RG = 25 Ω VGS = 2 V IAS 36 A Starting Tch - Starting Channel Temperature - C 6 Data Sheet D72EJ
7 PACKAGE DRAWING (Unit: mm) Isolated TO-22 (MP-45F).±.3 4.5±.2 φ 3.2±.2 2.7±.2 5.±.3 4±.2 3±. 3.5 MIN. 2.±.2.7±..3±.2.5± ±. 2.5± Gate 2. Drain 3. Source EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this debice. Data Sheet D72EJ 7
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Dual N-Channel MOSFET DESCRIPTION FEATURES SMC4228 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored
More informationIRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/ V, N-CHANNEL
PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)
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N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package Figure 1: Internal schematic diagram Features Order code VDS Datasheet - production data RDS(on) max. ID PTOT STE60N105DK5
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STP5N80K5 5N80K5 TO-220 Tube
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID STP5N80K5 800 V 1.75 Ω 4 A Industry s lowest RDS(on) x area
More informationN-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max. ID Ptot STFU10NK60Z 600 V 0.75 Ω 10
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube
N-channel 600 V, 0.045 Ω typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW56N60M2-4 650 V 0.055 Ω 52 A Excellent switching
More informationComplementary Trench MOSFET AO4629 (KO4629) SOP P-channel
Features N-Channel VDS (V) = 3V ID = A (VGS = V) RDS(ON) < 3mΩ (VGS = V) RDS(ON) < 4mΩ (VGS = 4.V) P-Channel VDS (V) = -3V ID = -. A (VGS = -V) RDS(ON) < 4mΩ (VGS = -V) RDS(ON) < 74mΩ (VGS = -4.V) SOP-8.
More informationFeatures. Table 1: Device summary Order code Marking Package Packing STW75NF30 75NF30 TO-247 Tube
N-channel 300 V, 35 mω typ., 60 A STripFET II Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW75NF30 300 V 45 mω 60 A 320 W TO-247 1 2 3 Exceptional
More informationSURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary
PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier
More informationRevision. 007 PGA26E19BA. Product Standards PGA26E19BA. Established: Revised: Page 1 of 11
Revision. 7 Product Standards Established: 24-9-25 Revised: 27--24 Page of Revision. 7 Type Application Structure GaN-Tr For power switching N-channel enhancement mode FET Equivalent Circuit Figure Out
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STD20NF06LAG D20N6LF6 DPAK Tape and Reel
Automotive-grade N-channel 60 V, 32 mω typ., 24 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD20NF06LAG 60 V 40 mω 24 A 60 W AEC-Q101
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PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)
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PD-91551D POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) ID IRFN350 0.315 Ω 14A IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY
More information4V Drive Nch MOSFET. Data Sheet RSJ300N10. 1/ Rev.A. Structure Silicon N-channel MOSFET. Dimensions (Unit : mm)
4V Drive Nch MOSFET RSJ3N Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS. 4.5.3 Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3. 3. 9...24 2.54.78.4.2 5.8 2.7 () (2) (3)
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STW75N60M6 75N60M6 TO-247 Tube
N-channel 600 V, 32 mω typ., 72 A MDmesh M6 Power MOSFET in TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID STW75N60M6 600 V 36 mω 72 A 3 2 1 TO-247 Figure 1: Internal
More information10V Drive Nch MOSFET. Data Sheet RSJ400N06. 1/ Rev.A. Dimensions (Unit : mm) Structure Silicon N-channel MOSFET
V Drive Nch MOSFET RSJ400N06 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS. 4.5.3 Features ) Low on-resistance. 2) High current 3) High power Package 3. 3.0 9.0.0.24 2.54 5.08 0.78 0.4
More informationSymbol Parameter Typ Max Units Thermal Resistance Junction to Ambient C t 10s 62 Thermal Resistance Junction to Ambient C
SMC93M Dual P-Channel MOSFET DESCRIPTION SMC93 is the Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.this advanced technology has been especially tailored
More informationIRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C.
PD-975C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-8) Product Summary Part Number BVDSS RDS(on) ID IRFE230 200V 0.40Ω 5.5A IRFE230 JANTX2N6798U JANTXV2N6798U REF:MIL-PRF-9500/557
More informationNew Designs. Not Recommended for. 4V Drive Nch MOSFET. Data Sheet RSJ300N10. 1/ Rev.A. Dimensions (Unit : mm)
4V Drive Nch MOSFET RSJ3N Structure Silicon N-channel MOSFET Features ) Low on-resistance. 2) Built-in G-S Protection Diode. Application Switching Packaging specifications Package Taping Type Code TL Basic
More informationFeatures. Order code. Description. Table 1: Device summary Order code Marking Package Packing STL28N60DM2 28N60DM2 PowerFLAT 8x8 HV Tape and reel
N-channel 600 V, 0.155 Ω typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features 4 5 3 2 1 PowerFLAT 8x8 HV Figure 1: Internal schematic diagram Order code
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STWA48N60DM2 48N60DM2 TO-247 long leads Tube
N-channel 600 V, 0.065 Ω typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code VDS RDS(on) max. ID STWA48N60DM2 600 V 0.079 Ω 40 A Fast-recovery
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF4N90K5 4N90K5 TO-220FP Tube
N-channel 900 V, 1.90 Ω typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID STF4N90K5 900 V 2.10 Ω 4 A TO-220FP Figure 1: Internal
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STN3NF06L 3NF06L SOT-223 Tape and reel
N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET in a SOT-223 package Datasheet - production data Features Order code VDS RDS(on) max. ID STN3NF06L 60 V 0.1 Ω 4 A Exceptional dv/dt capability
More informationSMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF) Features. Absolute Maximum Ratings Ta = 25
P-Channel SOT-.9 -.. -. Unit: mm Features VDS (V) =-V ID =-5. A (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < mω (VGS =-.5V). -..95 -..9 -.. -..55.. -. +.5 RDS(ON) < 59mΩ (VGS =-.V) Pb Free Package May
More informationI2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@V GS = 10 V This advanced technology has - been Low
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September, 2013 SJ-FET TSD5N60S/TSU5N60S OSD5N60S/OSU5N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism
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