TO-220F (SLS) Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V

Transcription

1 FMV4N6S Super J-MOS series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-22F (SLS) Equivalent circuit schematic 2Drain Connection Gate 2 Drain 3 Source 2 3 Gate 3Source DIMENSIONS ARE IN MILLIMETERS. Absolute Maximum Ratings at TC=25 C (unless otherwise specified) Parameter Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 6 V VDSX 6 V VGS=-3V Continuous Drain Current ID ±4 A Tc=25 C Note* ±25 A Tc= C Note* Pulsed Drain Current IDP ±2 A Note * Gate-Source Voltage VGS ±3 V Repetitive and Non-Repetitive Maximum Avalanche Current IAR 7.6 A Note *2 Non-Repetitive Maximum Avalanche Energy EAS 39 mj Note *3 Maximum Drain-Source dv/dt dvds/dt 5 kv/μs VDS 6V Peak Diode Recovery dv/dt dv/dt 5 kv/μs Note *4 Peak Diode Recovery -di/dt -di/dt 8 A/μs Note *5 Maximum Power Dissipation PD 2.6 Ta=25 C W 3 TC=25 C Operating and Storage Temperature range Tch 5 C Tstg -55 to +5 C Isolation Voltage Viso 2 kvrms t=6sec, f=6hz Note * : Limited by maximum channel temperature. Note *2 : Tch 5 C, See Fig. and Fig.2 Note *3 : Starting Tch=25 C, IAS=4.6A, L=2mH, VDD=6V, RG=5Ω, See Fig. and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note *4 : IF -ID, -di/dt=8a/μs, VDS peak 6V, Tch 5 C. Note *5 : IF -ID, dv/dt=5kv/μs, VDS peak 6V, Tch 5 C. Electrical Characteristics at TC=25 C (unless otherwise specified) Static Ratings Parameter Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=25μA VGS=V V Gate Threshold Voltage VGS(th) ID=25μA VDS=VGS V Zero Gate Voltage Drain Current Gate-Source Leakage Current IDSS IGSS VDS=6V VGS=V VDS=48V VGS=V VGS= ± 3V VDS=V Tch=25 C Tch=25 C μa - na Drain-Source On-State Resistance RDS(on) ID=2A VGS=V Ω Gate resistance RG f=mhz, open drain -. - Ω 8466 OCTOBER 25

2 FMV4N6S Dynamic Ratings Parameter Symbol Conditions min. typ. max. Unit Forward Transconductance gfs ID=2A VDS=25V S Input Capacitance Ciss VDS=4V Output Capacitance Coss VGS=V Reverse Transfer Capacitance Crss f=25khz Effective output capacitance, energy related (Note *6) Co(er) VGS=V VDS= 48V pf Effective output capacitance, time related (Note *7) Co(tr) VGS=V VDS= 48V ID=constant td(on) Turn-On Time VDD=4V, VGS=V tr ID=2A, RG=3Ω td(off) Turn-Off Time See Fig.3 and Fig tf Total Gate Charge QG - - Gate-Source Charge VDD=48V, ID=4A QGS VGS=V Gate-Drain Charge QGD See Fig Drain-Source crossover Charge QSW Note *6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from to 8% BVDSS. Note *7 : Co(tr) is a fixed capacitance that gives the same charging times as Coss while VDS is rising from to 8% BVDSS. ns nc Reverse Diode Parameter Symbol Conditions min. typ. max. Unit Avalanche Capability IAV L=26.7mH, Tch=25 C See Fig. and Fig A Diode Forward On-Voltage VSD IF=4A, VGS=V Tch=25 C -.35 V Reverse Recovery Time trr 54 - ns Reverse Recovery Charge Qrr IF=4A, VDD=4V -di/dt=8a/μs Tch=25 C μc See Fig.6 and Fig.7 Peak Reverse Recovery Current Irp A Thermal Resistance Parameter Symbol min. typ. max. Unit Channel to Case Rth(ch-c) C/W Channel to Ambient Rth(ch-a) C/W 2

3 FMV4N6S 4 Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS): Duty=(Single pulse), Tc=25 C 2 t= µs µs µs 8 PD [W] 6 4. Power loss waveform : Square waveform ms 2 P D t TC [ C] Typical Output Characteristics ID=f(VDS): 8µs pulse test, Tch=25 C 2V V 8V 7V Typical Output Characteristics ID=f(VDS): 8µs pulse test, Tch=5 C V 2V 8V 6V V 4 5.5V V 5.5V VGS=5V 3 2 5V VGS=4.5V Typical Drain-Source on-state Resistance RDS(on)=f(ID): 8µs pulse test, Tch=25 C 5V 5.5V 6V 6.5V.7.65 Typical Drain-Source on-state Resistance RDS(on)=f(ID): 8µs pulse test, Tch=5 C 4.5V 5V 5.5V V V RDS(on) [Ω] V V VGS=2V RDS(on) [Ω] V V VGS=2V

4 FMV4N6S 7 Drain-Source Breakdown Voltage BVDSS=f(Tch): ID=mA, VGS=V This curve is not a guaranteed performance and is a reference value..3 Drain-Source On-state Resistance RDS(on)=f(Tch): ID=2A, VGS=V BVDSS [V] 6 58 RDS(on) [Ω] max typ Tch [ C] Tch [ C] 6 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch): VDS=VGS, ID=25µA Typical Transfer Characteristic ID=f(VGS): 8µs pulse test, VDS=25V 5 4 VGS(th) [V] 3 5 Tch=25 typ Tch [ C] VGS[V] Typical Transconductance gfs=f(id): 8µs pulse test, VDS=25V Typical Forward Characteristics of Reverse Diode IF=f(VSD): 8µs pulse test Tch=25 gfs [S] 5 IF [A] 5 Tch= VSD [V]

5 FMV4N6S Typical Capacitance C=f(VDS): VGS=V, f=25khz 3 Typical Coss stored energy 25 Ciss 2 C [pf] Coss Eoss [uj] 5 Crss Typical Switching Characteristics vs. ID Tch=25 C t=f(id): Vdd=4V, VGS=V/V, RG=3Ω Typical Gate Charge Characteristics VGS=f(Qg): ID=4A, Tch=25 C 8 Vdd=48V 3V t [ns] td(on) VGS [V] 6 2V td(off) 4 tr 2 tf Qg [nc] 3 Maximum Avalanche Energy vs. startingtch E(AV)=f(starting Tch): Vcc=6V,I(AV)<=7.6A I AS =2.3A Transient Thermal Impedance Zth(ch-c)=f(t): D= 25 EAV [mj] 2 5 I AS =4.6A Zth(ch-c) [ /W] - -2 I AS =7.6A t [sec] starting Tch [ C] 5

6 FMV4N6S L +V VGS -5V BVDSS Rg D.U.T. V DD IAV VDS Fig. Avalanche Test circuit Fig.2 Operating waveforms of Avalanche Test ID V DS V GS Diode L V DS 9% V GS 9% V DS 9% V DD R G D.U.T. V GS % V DS % V DS % PG td(on) tr td(off) tf Fig.3 Switching Test circuit Fig.4 Operating waveform of Switching Test VGS,VDS VDS VGS QSW QG V QGS QGD Qg Fig.5 Operating waveform of Gate charge Test IF V DS peak D.U.T L trr V DS R G Same as D.U.T. V DD Irp % PG Irp trr Qrr= ir dt Fig.6 Reverse recovery Test circuit Fig.7 Operating waveform of Reverse recovery Test 6

7 FMV4N6S Outview: TO-22F (SLS) Package Connection Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Marking Trademark Country of origin mark. " " (Blank): Japan P : Philippines YMNNN 4N6S Date code & Lot No. Y: Last digit of year M: Month code ~9 and O,N,D NNN: Lot. serial number Under bar of date code : means lead-free mark Type name * The font (font type,size) and the trademark-size might be actually different. 7

8 FMV4N6S WARNING. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 25. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 8