SWITCHING N-CHANNEL POWER MOS FET
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1 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK25,25-Z SWITCHING N-CHANNEL POWER MOS FET Description The 2SK25 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. Features Low on-state resistance RDS(on) =. Ω MAX. ( = V, =. A) RDS(on)2 =.5 Ω MAX. ( = V, =. A) Low Ciss: Ciss = 57 pf TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage VDSS 6 V Gate to Source Voltage S ±2 V Drain Current (DC) (DC) ±8. A Drain Current (pulse) Note (pulse) ±32 A Total Power Dissipation (TC = 25 C) PT 2 W Total Power Dissipation (TA = 25 C) PT2. W Channel Temperature Tch 5 C Storage Temperature Tstg 55 to +5 C Single Avalanche Current Note 2 IAS 8. A Single Avalanche Energy Note 2 EAS 6. mj Notes PW µs, Duty Cycle % 2 Starting Tch = 25 C, RG = 25 Ω, = 2 V <R> PACKAGE DRAWINGS (Unit: mm).6 ±.2. ± ±.2 TO-25 (MP-3) 6.5 ±.2 5. ± ±.2 7. MIN MIN. 2.3 ±.2 TO-252 (MP-3Z) 6.5 ±.2 5. ±.2. ± Note 5.6 ± ±.5.5 ±..5.. Gate 2. Drain 3. Source. Fin (Drain) ±..5 ±. 2.3 ± ±.3.5 ±.5. Gate 2. Drain 3. Source. Fin (Drain) Note The depth of notch at the top of the fin is from to.2 mm ±.2.5 ±. Note. ±.5. MIN..5 TYP. 2.5 ±.5 EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D327EJ3VDS (3rd edition) Date Published August 26 N CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what." field.
2 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain to Source On-state Resistance RDS(on).7. Ω = V, =. A RDS(on)2..5 Ω = V, =. A Gate Cut-off Voltage (off) V VDS = V, = ma Forward Transfer Admittance yfs S VDS = V, =. A Zero Gate Voltage Drain Current SS µa VDS = 6 V, = V Gate Leakage Current IGSS ± µa = ±2 V, VDS = V Input Capacitance Ciss 57 pf VDS = V Output Capacitance Coss 29 pf = V Reverse Transfer Capacitance Crss 75 pf f = MHz Turn-On Delay Time td(on) 5 ns =. A Rise Time tr 6 ns = V Turn-Off Delay Time td(off) 75 ns = 3 V Fall Time tf ns R G = Ω Total Gate Charge QG 2 nc = 8. A Gate to Source Charge QGS 2. nc = 8 V Gate to Drain Charge QGD 6.5 nc = V Body Diode Forward Voltage VF(S-D). V IF = 8. A, = V Reverse Recovery Time trr 85 ns IF = 8. A, = V Reverse Recovery Charge Qrr 2 nc di/dt = A/µs TEST CIRCUIT AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω PG. 5 Ω = 2 V BVDSS IAS VDS L PG. τ RG D.U.T. RL Wave Form Wave Form % % 9% 9% 9% td(on) tr td(off) t f % Starting Tch τ = µ s Duty Cycle % ton toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 ma RL PG. 5 Ω 2 Data Sheet D327EJ3VDS
3 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dt - Percentage of Rated Power - % PT - Total Power Dissipation - W TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RDS(on) Limited (at = V) (pulse) (DC) DC ms ms s µ PW = s µ = V = 6 V = V Power Dissipation Limited 8 TC = 25 C Single Pulse FORWARD TRANSFER CHARACTERISTICS VDS = V TA = 25 C 25 C 25 C Gate to Source Voltage - V Data Sheet D327EJ3VDS 3
4 rth(t) - Transient Thermal Resistance - C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WTH Rth(ch-A) = 25 C/W Rth(ch-C) = 6.25 C/W. Single Pulse. µ µ m m m PW - Pulse Width - s IyfsI- Forward Transfer Admittance - S. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT TA = 25 C 25 C 75 C 25 C VDS = V RDS(on) - Drain to Source On-State Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Gate to Source Voltage - V =. A 25 RDS(on) - Drain to Source On-State Resistance - mω DRAIN TO SOURCE ON-STATE RESITANCE vs. DRAIN CURRENT = V = V (off) - Gate Cut-off Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = V = ma Tch - Channel Temperature - C Data Sheet D327EJ3VDS
5 RDS(on) - Drain to Source On-State Resistance - mω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE = V = V 2 =. A IF - Diode Forward Current - A V SOURCE TO DRAIN DIODE FORWARD VOLTAGE = V. 2. Tch - Channel Temperature - C VF (S-D) - Source to Drain Voltage - V Ciss, Coss, Crss - Capacitance - pf CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Crss Coss = V f = MHz Ciss td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS tf td(off) tr td(on) = 3 V = V RG. = Ω.. trr - Reverse Recovery time - ns REVERSE RECOVERY TIME vs. DRAIN CURRENT di/dt = A/ µ s = V VDS DYNAMIC INPUT/OUTPUT CHARACTERISTICS = 8. A = 8 V Gate to Source Voltage - V QG - Gate Charge - nc Data Sheet D327EJ3VDS 5
6 IAS - Single Avalanche Energy - mj. SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD IAS = 8. A EAS = 6. mj = 3 V = 2 V RG. = 25 Ω µ µ m m dt - Energy Derating Factor - % SINGLE AVALANCHE ENERGY DERATING FACTOR = 3 V RG = 25 Ω = 2 V IAS 8. A L - Inductive Load - H Starting Tch - Starting Channel Temperature - C 6 Data Sheet D327EJ3VDS
7 The information in this document is current as of August, 26. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) () "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 2. -
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