12N60 12N65 Power MOSFET

Transcription

1 12 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 1 TO-220 ITO-220/TO-220F is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 1 TO-262/I TO-263/D FEATURES * 12A, 600V, R DS(ON) =0.73Ω@V GS =10V * Low gate charge ( typical 44 nc) * Low Crss ( typical 18 pf) * Fast switching * 100% avalanche tested * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number 12N60 12N65 Note: Pin Assignment: G: Gate D: Drain S: Source Part No. Package Packing 12N6* -TU TO pcs / Tube 12N6*-TU 12N6*-TU 12N6*-TU 12N6*-TR ITO-220/TO-220F TO-262 TO-263 TO-263 Package Pin Assignment TO-220 G D S ITO-220/TO-220F G D S 2 TO-262/I PAK G D S 2 TO-263/D PAK G D S 50pcs / Tube 50pcs / Tube 50pcs / Tube 800pcs / 13" Reel 1 of 7

2 ABSOLUTE MAXIMUM RATINGS (T C = 25 С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage 12N V V DSS 12N V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 10 A Drain Current Continuous I D 12 A Pulsed (Note 2) I DM 48.0 A Avalanche Energy Single Pulsed (Note 3) E AS 790 mj Repetitive (Note 2) E AR 15.6 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO W Power Dissipation /TO-263/TO-262 P TO-220F D 51 W (T C = 25 С) Junction Temperature T J +150 С Ambient Operating Temperature T OPR -55 ~ +150 С Storage Temperature T STG -55 ~ +150 С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by T J 3. L=7.3mH, I AS =10A, =50V, R G =25 Ω, Starting T J = 25 C 4. I SD 9.5A, di/dt 200A/μs, BV DSS, Starting T J = 25 C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-262/I 62.5 TO-263/D 62.5 Junction-to-Ambient TO-220 θ JA 62.5 /W ITO-220/TO-220F 62.5 TO-262/I 0.85 Junction-to-Case TO-263/D 0.85 θ Jc TO /W ITO-220/TO-220F of 7

3 ELECTRICAL CHARACTERISTICS (T J =25 С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 10N V Drain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 250μA 10N V Drain-Source Leakage Current I DSS V DS = 600V, V GS = 0V 1 μa Gate-Source Leakage Current Forward V GS = 30V, V DS = 0V 100 na I GSS Reverse V GS = -30V, V DS = 0V -100 na Breakdown Voltage Temperature Coefficient BV DSS / T J I D = 250 μa, Referenced to 25 C 0.7 V/ С ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS, I D = 250μA V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, I D =6A Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 1480 pf Reverse Transfer Capacitance C RSS 25 pf Output Capacitance C OSS V DS =25V, V GS =0V,f =1MHz 200 pf SWITCHING CHARACTERISTICS Turn-On Delay Time t D (ON) ns =300V, I D =10A, Turn-On Rise Time t R ns R G =25Ω Turn-Off Delay Time t D(OFF) ns (Note 1, 2) Turn-Off Fall Time t F ns Total Gate Charge Q G V DS =480V, V GS =10V, nc Gate-Source Charge Q GS I D =10A 8.6 nc Gate-Drain Charge Q GD (Note 1, 2) 21 nc DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage V SD V GS = 0 V, I SD = 10 A 1.4 V Continuous Drain-Source Current I SD 12 A Pulsed Drain-Source Current I SM 48 A Reverse Recovery Charge Q RR di/dt = 100 A/μs (Note1) 5.5 μc Reverse Recovery Time t RR V GS = 0 V, I SD = 10A, 570 ns Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle 2% 2. Essentially independent of operating temperature 3 of 7

4 TEST CIRCUITS AND WAVEFORMS D.U.T. + V DS L R G Driver V GS Same Type as D.U.T. * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit V GS (Driver) P.W. Period D= P. W. Period V GS = 10V I FM, Body Diode Forward Current I SD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt V DS (D.U.T.) Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms 4 of 7

5 TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L V DS BV DSS I AS R D 10V D.U.T. I D(t) V DS(t) t p t p Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms 5 of 7

6 TYPICAL CHARACTERISTICS Capacitance, (pf) Gate-Source Voltage, VCG (V) Drain-Source On-Resistance, RDS(ON) (Ω) Reverse Drain Current, IDR (A) 6 of 7

7 Drain-Source Breakdown Voltage, BVDSS (Normalized) Drain-Source On-Resistance, RDS(ON) (Normalized) Maximum Safe Operating Area Maximum Drain Current vs. Case Temperature Operation in this Area is United by RDM 10μs Drain Current, ID (A) DC 10ms 100ms Notes: 1.TC=25 2.TJ=150 3.Single Pulse 1ms 100μs Drain Current, ID (A) Drain-Source Voltage, V DS (V) Case Temperature, T C ( ) 10 0 Transient Thermal Response Curve D= NOTES: 1.ZθJC(t)=2.5D/W Max 2.Duty Factor,D=t1/t2 3.TJW-TC=PDW-Z θjc(t) Single pulse PDW t1 t Square Wave Pulse Duration, t 1 (sec) 7 of 7