Dual N-Channel Enhancement Mode Field PD1503YVS Effect Transistor

Transcription

1 Dual N-Channel Enhancement Mode Field PDYVS PRODUCT SUMMARY V (BR)DSS R DS(ON) I D V.mΩ 9A V mω A 7 4 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL UNITS Drain-Source Voltage V DS V Gate-Source Voltage V GS ± ± V Continuous Drain Current T A = C 9 T A = 7 C I D 7 Pulsed Drain Current I DM Avalanche Current I AS 9 Avalanche Energy L =.mh E AS 4 mj Power Dissipation T A = C T A = 7 C Junction & Storage Temperature Range T j, T stg - to C ABSOLUTE MAXIMUM RATINGS (T A = C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Schottky UNITS Reverse Current V R = V I R. ma Forward Voltage I F = A V F.4 V THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient R JA. C / W Pulse width limited by maximum junction temperature. P D. A W ELECTRICAL CHARACTERISTICS (T A = C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC MIN LIMITS TYP MAX UNIT Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = A Gate Threshold Voltage V GS(th) V DS = V GS, I D = A.7 V REV.9 Oct--9

2 Dual N-Channel Enhancement Mode Field PDYVS Gate-Body Leakage I GSS V DS = V, V GS = ±V ± ± na Zero Gate Voltage Drain Current I DSS V DS = 4V, V GS = V V DS = V, V GS = V, T J = C - - A On-State Drain Current I D(ON) V DS = V, V GS = V A Drain-Source On-State Resistance R DS(ON) V GS = 4.V, I D = 7A V GS = V, I D = 9A V GS = 4.V, I D = A V GS = V, I D = 7A mω Forward Transconductance g fs V DS = V, I D = 9A V GS = V, I D = 7A S DYNAMIC Input Capacitance C iss 4 Output Capacitance C oss N-Channel V GS = V, V DS = V, f = MHz 9 pf Reverse Transfer Capacitance C rss 9 4 Gate Resistance Rg VGS = V, VDS = V, f = MHz. Ω Total Gate Charge Q g (V GS=V) Total Gate Charge Q g (V GS=4.V) V DS =.V (BR)DSS, V GS = V, 9. Gate-Source Charge Q gs I D = 9A.. nc Gate-Drain Charge Q gd.. REV.9 Oct--9

3 Dual N-Channel Enhancement Mode Field PDYVS Turn-On Delay Time t d(on) 9 Rise Time Turn-Off Delay Time Fall Time t r t d(off) t f V DS = V I D A, V GS = V, R GEN = Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T A = C) 4 9 ns Continuous Current I S. A Forward Voltage V SD :I F = 9A, V GS = V :I F = 7A, V GS = V.7 V Reverse Recovery Time t rr :I F = 9A,dI F /dt = A/μs ns Reverse Recovery Charge Q rr :I F = 7A,dI F /dt = A/μs nc Pulse test : Pulse Width sec, Duty Cycle %. Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH PDYVS, DATE CODE or LOT # REV.9 Oct--9

4 Dual N-Channel Enhancement Mode Field PDYVS Typical Characteristics: VGS = V Output Characteristics Transfer Characteristics. VGS = 4.V VGS = V..... On-Resistance VS Temperature TJ= C TJ= C TJ=- C VGS, Gate-To-Source Voltage(V).E+ Capacitance Characteristic RDS(ON)ON-Resistance(OHM) VGS=V ID=9A TJ, Junction Temperature( C) C, Capacitance(pF).E+ Ciss 9.E+.E+.E+ Coss Crss.E+ Gate charge Characteristics Source-Drain Diode Forward Voltage.E+ VGS, Gate-To-Source Voltage(V) 4 ID=9A VDS=V IS, Source Current(A).E+.E+.E+.E-.E-.E- TJ = C TJ = C 4 Qg, Total Gate Charge.E VSD, Source-To-Drain Voltage(V) REV.9 4 Oct--9

5 Dual N-Channel Enhancement Mode Field PDYVS ID, Drain Current(A). Operation in This Area is Limited by R DS(ON) NOTE :.V GS= V.T A= C.R θja =. C/W 4.Single Pulse Safe Operating Area us m s m s m s S S DC.. Power(W) Single Pulse Maximum Power Dissipation SINGLE PULSE R θja =. C/W TA= C.... Single Pulse Time(s).E+ Transient Thermal Response Curve r(t), Normalized Effective Transient Thermal Resistance.E+.E-.E- Duty Cycle= single Pluse.E-.E-.E-4.E-.E-.E-.E+.E+.E+ T, Square Wave Pulse Duration[sec] Note.Duty cycle, D= t / t.rthja =. o C/W.TJ-TA = P*RthJC(t) 4.RthJA(t) = r(t)*rthja REV.9 Oct--9

6 Dual N-Channel Enhancement Mode Field PDYVS Typical Characteristics: VGS = V Output Characteristics Transfer Characteristics VGS = 4.V VGS = V..... On-Resistance VS Temperature. TJ= C TJ= C TJ=- C VGS, Gate-To-Source Voltage(V).E+ Capacitance Characteristic 4. RDS(ON)ON-Resistance(OHM) VGS=V ID=7A TJ, Junction Temperature( C) C, Capacitance(pF).E+.E+ Ciss 4.E+.E+ Coss Crss.E+ Gate charge Characteristics Source-Drain Diode Forward Voltage.E+ VGS, Gate-To-Source Voltage(V) ID=9A VDS=V 4 9 Qg, Total Gate Charge IS, Source Current(A).E+.E+.E+.E-.E-.E-.E-4. TJ = C TJ = C VSD, Source-To-Drain Voltage(V) REV.9 Oct--9

7 Dual N-Channel Enhancement Mode Field PDYVS ID, Drain Current(A) Operation in This Area is Limited by R DS(ON) Safe Operating Area us ms ms ms. NOTE : S.V NOTE : GS= V S.V GS= V DC.T A= C.R.T= C θja =. C/W 4.Single.R θja =. Pulse C/W.. Power(W) Single Pulse Maximum Power Dissipation SINGLE PULSE R θja =. C/W T A= C.... Single Pulse Time(s).E+ Transient Thermal Response Curve r(t), Normalized Effective Transient Thermal Resistance.E+.E-.E- Duty Cycle= single Pluse.E-.E-.E-4.E-.E-.E-.E+.E+.E+ T, Square Wave Pulse Duration[sec] Note.Duty cycle, D= t / t.rthja =. o C/W.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*rthja REV.9 7 Oct--9