HGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS

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1 , HGI29NSL P- Feature High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness % UIS Tested, % Rg Tested Lead Free, Halogen Free V N-Ch Power MOSFET V DS V R DS(on),typ V GS =V 22 mω R DS(on),typ V GS =4.5V 25 mω 3 A I D (Sillicon Limited) Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DC in Telecoms and Inductrial TO-252 TO-25 Drain Gate 2 Part Number Package Marking TO-252 GD29NSL HGI29NSL TO-25 GI29NSL Src Absolute Maximum Ratings at T j =25 (unless otherwise specified) Parameter Symbol Conditions Value T C =25 3 Continuous Drain Current (Silicon Limited) I D T C = 22 Drain to Source Voltage - Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation V DS Gate to Source Voltage V GS - I DM E AS - L=.4mH, T C =25 P D T C =25 Operating and Storage Temperature T J, T stg - ± to 75 Unit A V V A mj W Absolute Maximum Ratings Parameter Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Symbol R θja R θjc Max Unit 5 /W 2.4 /W Ver. Mar. 7

2 , HGI29NSL P-2 Electrical Characteristics at T j =25 (unless otherwise specified) Static Characteristics Parameter Symbol Conditions Value min typ max Unit Drain to Source Breakdown Voltage V (BR)DSS V GS =V, I D =25µA - - Gate Threshold Voltage V GS(th) V GS =V DS, I D =25µA V V GS =V, V DS =V, T j = Zero Gate Voltage Drain Current I DSS V GS =V, V DS =V, T j = - - µa Gate to Source Leakage Current Drain to Source on Resistance Transconductance I GSS R DS(on) g fs V GS =±V, V DS =V - - ± na V GS =V, I D =A mω V GS =4.5V, I D =8A V DS =5V, I D =A S Gate Resistance R G V GS =V, V DS Open, f=mhz Ω Dynamic Characteristics Input Capacitance C iss Output Capacitance C oss V GS=V, V DS=5V, f=mhz Reverse Transfer Capacitance C rss Total Gate Charge Q g (V) Total Gate Charge Q g (4.5V) V DD =5V, I D =8A, V GS =V Gate to Source Charge Q gs Gate to Drain (Miller) Charge Q gd Turn on Delay Time t d(on) Rise time t r VDD=5V, ID=8A, VGS=V, Turn off Delay Time t d(off) R G =Ω, - - Fall Time t f pf nc ns Reverse Diode Characteristics Diode Forward Voltage V SD V GS =V, I F =A V Reverse Recovery Time t rr ns V R =5V, I F =8A, di F /dt=5a/µs Reverse Recovery Charge Q rr - - nc Ver. Mar. 7

3 , HGI29NSL P-3 Fig. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 6 5 V 6V 4.5V 4V 8 7 I D =A 6 I D (A) 3.5V R DS(ON) (mω) 5 25 C 25 C Vgs=3V 2 3 V DS (V) V GS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature I D =A R DS(ON) (mω) 25 5 V GS =4.5V V GS =V Normalized On-Resistance V GS =V V GS =4.5V 5 5 I D (A) Temperature ( C) Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward Voltage V DS =5V 5 I D (A) I S (A) 25 C 25 C V GS (V) V SD (V) Ver. Mar. 7

4 , HGI29NSL P-4 Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage Figure 8. Typical Capacitance vs. Drain-to-Source Voltage V DS =5V I D =8A 8 C iss V GS (V) 6 4 Capacitance (pf) C oss 2 C rss Q g (nc) 6 8 V DS (V) Figure 9. Maximum Safe Operating Area Figure. Maximun Drain Current vs. Case Temperature. µs R DS(ON) limited I D (Amps)... T J(Max) =75 C T C =25 C DC µs ms ms Current rating I D (A)... V DS (V) T Ambient ( ) Figure. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient Duty=T on /T Peak T J =T C +P DM.Z θjc.r θjc R θjc =2.4 /W Duty=.5.3 Z θja Normalized Transient Thermal Resistance single pulse. E Pulse Width (s) Ver. Mar. 7

5 , HGI29NSL P-5 Inductive switching Test Gate Charge Test Uclamped Inductive Switching (UIS) Test Diode Recovery Test Ver. Mar. 7

6 , HGI29NSL P-6 Package Outline TO-25, 3 leads TO-252, 2 leads Ver. Mar. 7