N- & P-Channel Enhancement Mode Field Effect Transistor D1 S1 D2

Transcription

1 N- & annel Enhancement Mode PNAG TSOP- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel m.a annel - m -A G D S G D S D S D G S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel annel UNITS Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± ± V Continuous Drain Current T C = C. -. T C = 7 C I D. -. A Pulsed Drain Current I DM - Power Dissipation T C = C. T C = 7 C Junction & Storage Temperature Range T j, T stg - to Lead Temperature ( / from case for sec.) T L 7 P D.7 W C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient t sec R θja C / W Junction-to-Ambient Steady State R θja C / W Junction-to-Lead Steady State R θjl C / W Pulse width limited by maximum junction temperature. Duty cycle % MAR-9-

2 N- & annel Enhancement Mode PNAG TSOP- ELECTRICAL CHARACTERISTICS (T C = C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS MIN TYP MAX UNIT V GS = V, I D = µa Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = -µa - Gate Threshold Voltage V GS(th) V DS = V GS, I D = µa V DS = V GS, I D = -µa V Gate-Body Leakage I GSS V DS = V, V GS = ±V V DS = V, V GS = ±V ± ± na V DS = V, V GS = V V DS = -V, V GS = V - Zero Gate Voltage Drain Current I DSS V DS = V, V GS = V, T J = C µa V DS = -V, V GS = V, T J = C - On-State Drain Current I D(ON) V DS = V, V GS = V V DS =-V, V GS = -V - A V GS =.V, I D = A 7 9 Drain-Source Resistance On-State R DS(ON) V GS = -.V, I D = -.A V GS = V, I D =.A m V GS = -V, I D = -.A Forward Transconductance g fs V DS = V, I D =.A V DS = -V, I D = -A DYNAMIC Input Capacitance C iss annel Output Capacitance C oss V GS = V, V DS = V, f = MHz annel Reverse Transfer Capacitance C rss V GS = V, V DS = -V, f = MHz. 9 S pf MAR-9-

3 N- & annel Enhancement Mode PNAG TSOP- Total Gate Charge Q g annel V DS =.V (BR)DSS, V GS = V,.... Gate-Source Charge Q gs I D =.A annel.. nc Gate-Drain Charge Q gd V DS =.V (BR)DSS, V GS = -V, I D = -A..9 Turn-On Delay Time Rise Time t d(on) t r annel V DS = V, R L = I D A, V GS = V, R GEN = 7 Turn-Off Delay Time Fall Time t d(off) t f annel V DS = -V, R L = I D -A, V GS = -V, R GEN = 7 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T C = C) Forward Voltage V SD I F =.A, V GS = V I F = -.A, V GS = V. -. V Reverse Recovery Time t rr I F =.A, dl F /dt = A / µs I F = -.A, dl F /dt = A / µs ns Pulse test : Pulse Width µsec, Duty Cycle %. Independent of operating temperature. Pulse width limited by maximum junction temperature. REMARK: THIS PRODUCT MARKED WITH YWW Orders for parts with plating can be placed using the PXXXXXXG parts name. YWW Marking Description: - N+P MOSFET - Serial Number Y - Year W - Week MAR-9-

4 N- & annel Enhancement Mode PNAG TSOP- ID, Drain-source current(a) N-CHANNEL On-Region Characteristics. VGS= V.V.V.V.V.V RDS(ON), Noemalized Drain-source on-resistance. On-Resistance Variation with Drain Current and Gate Voltage. VGS=.V..V..V..V 7.V V. RDS(ON), Normalized Drain-source on-resistance VDS, Drain-Source Voltage(V) On-Resistance Variation with Temperature..... ID=.A VGS= V On-Resistance Variation with Gate-to-Source Voltage. RDS(ON), On-resistance(OHM) ID, Drain Current(A) TA= C TA= C ID=A ID, Drain Current(A) Transfer Characteristics. VDS= V TJ, Junction Temperature( C) TA= - C C C Is, Reverse Drain Current (A).... VGS= V VGS, Gate to Source Voltage(V) Body Diode Forword Voltage Variation with Source Current and Temperature. TA= C C - C VGS, Gate to Source Voltage(V) VSD, Body Diode Forword Voltage(V) MAR-9-

5 N- & annel Enhancement Mode PNAG TSOP- Gate-Charge Characteristics Capacitance Characteristics ID =.A VDS= V V VGS (Voltage) V Capacitance(pF) Coss Ciss 7 Qg (nc) Crss VDS,Drain to Source Voltage(V) Maximum Safe Operating Area. Single Pulse Maximum Power Dissipation. ID, Drain Current(A).... RDS(ON)LIMIT VGS= V SINGLE PULSE R JA= C/W TA= C s DC ms ms ms us.. VDS, Drain-Source Voltage(V) Power(W) VGS= V SINGLE PULSE R JA= C/W TA= C.. Single pulse time(sec) MAR-9-

6 N- & annel Enhancement Mode PNAG TSOP- ID,Drain Current(A) P-CHANNEL VGS= -V On-Region Characteristics -.V -.V -.V -.V RDS(ON),Normalized Drain-Source On-Resistance.. VGS=-.V On-Resistance Variation with Drain Current and Gate Voltage. -.V -.V -.V -.V -.V - VDS,Drain-Source Voltage(V). - ID,Drain Current(A) RDS(ON),Normalized Drain-Source On-Resistance.... ID= -.A VGS= -V On-Resistance Variation with Temperature RDS(ON),On-Resistance(OHM).... On-Resistance Variation with Gate-to-Source Voltage. TA= C TA= C ID = -.A TJ,Junction Temperature( C) - VGS,Gate To Source Voltage(V) Transfer Characteristics Body Diode Forward Voltage Variation With Source Current and Temperature. -ID,Drain Current(A) VDS= - V TA= - C C C -IS,Reverse Drain Current(A)... VGS=V TA= C C - C... -VGS,Gate To Source Voltage(V) VSD,Body Diode Forward Voltage(V).. MAR-9-

7 N- & annel Enhancement Mode PNAG TSOP- Gate-Charge Characteristics ID = -.A VDS= -V -V Capacitance Characteristics VGS (Voltage) -V Capacitance(pF) Ciss Coss Crss Qg (nc) VDS,Drain to Source Voltage(V) Maximum Safe Operating Area. Single Pulse Maximum Power Dissipation. ID, Drain Current(A).... RDS(ON)LIMIT VGS= V SINGLE PULSE R JA= C/W TA= C s DC ms ms ms us.. VDS, Drain-Source Voltage(V) Power(W) VGS= V SINGLE PULSE R JA= C/W TA= C.. Single pulse time(sec) Transient Thermal Response Curve. r(t), Normalized Effective Transient Thermal Resistance..... D= Single Pulse P(pk) t t R JA(t) = r(t) * R R JA= C/W TJ-TA=P*R JA(t) Duty Cycle, D= t/ t..... t Time(Sec) 7 MAR-9-

8 N- & annel Enhancement Mode PNAG TSOP- TSOP- MECHANICAL DATA Dimension mm Min. Typ. Max. Dimension mm Min. Typ. Max. A.9 H... B... I.. C...7 J D.7.9. K E.7. L F. M G... N H C B A I D E G F MAR-9-