SSC8036GQ4. N-Channel Enhancement Mode MOSFET 1 / 5. Features Applications. Pin configuration. General Description. Package Information

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1 N-Channel Enhancement Mode MOSFET Features Applications Load Switch VDS VGS RDSon TYP ID PC/NB 3V ±2V 14 DCDC conversion 18A Pin configuration Bottom View General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. SSC836GQ4 Package Information Package: DFN3X3 1 /

2 SSC836GQ4 Absolute Maximum T A = 2 C unless otherwise specified Parameter Symbol 1S Maximum Steady Unit Drain-Source Voltage S 3 V Gate-Source Voltage S ±2 V Continuous Drain Current T C = 2 C 18 A Continuous Drain Current T C = 1 C 13 A Continuous Drain Current T A = 2 C SM A Continuous Drain Current T A = 7 C 7..8 A Plused Drain Current 3 M 12 A Repetitive avalanche energy L=.1mH 3 E AS 86 mj Power Dissipation 1 T C = 2 C P D 24 W Power Dissipation 1 T C = 1 C 9. W Power Dissipation 2 T A = 2 C P DSM 3 W Power Dissipation 2 T A = 7 C 2 W Storage and Junction Temperature Range T J, T STG - to +1 C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient 2 t 1S R JA C/W Maximum Junction-to-Ambient 2 4 Steady-State C/W Maximum Junction-to-Case Steady-State R JC --.2 C/W 2 /

3 SSC836GQ4 Electrical T A = 2 C unless otherwise specified Parameter Symbol Test Conditions Min Typ Max Unit Drain Source Breakdown Voltage V (BR)DSS = V, = 2μA V Gate Threshold Voltage (TH) =, =2μA V Gate Body Leakage Current I GSS = ± 2 V, = V ±1 na Zero Gate Voltage Drain Current SS = 24 V, = V ua Drain Source On State Resistance R DS(ON) = 1 V, = 1 A = 4. V, = 12 A mr Forward Transconductance G FS = 1 V, = 12 A S Diode Forward Voltage V SD = V, I S = 1A V Input Capacitance C ISS Output Capacitance C OSS = 1 V, = V, f = 1. MHz Reverse Transfer Capacitance C RSS Turn On Delay Time T D(ON) = 1 V, R L = 2.3R, Turn Off Delay Tim T D(OFF) = 1V, R GEN=3R pf ns Note : 1. The power dissipation P D is based on T J(MAX)=1 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heat sinking is used. 2. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =2 C. The Power dissipation P DSM is based on R JA t 1s value and the maximum allowed junction temperature of 1 C. The value in any given application depends on the user's specific board design. 3. Repetitive rating, pulse width limited by junction temperature T J(MAX)=1 C. Ratings are based on low frequency and duty cycles to keep initial T J =2 C. 4. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. 3 /

4 Threshold Voltage (V) I S, Source-Drain Current (A) C, Capacitance (pf) On Resistance (mr), Drain Current (A), Drain current(a) SSC836GQ4 Typical Performance Characteristics =1.V =4.V =3.V =3.V , Drain-Source Voltage (V) Fig1. Output Characteristics o C 12 o C 2 o C - o C , Gate-to-source Voltage(V) Fig2. Transfer Characteristics =4.V =1V 1 1 2, Drain-to-Source Voltage (V) Fig3. Capacitance Tj, Junction Temperature ( o C) Fig4. On Resistance vs. Temperature =2uA Tj, Junction Temperature ( o C) Fig. Gate Threshold vs. Temperature , Drain-Source Voltage (V) Fig6. Diode Forward Characteristics 4 /

5 SSC836GQ4 DISCLAIMER AFSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AFSEMOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICIENCE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THE GRAPHS PROVIDED IN THIS DOCUMENT ARE STATISTICAL SUMMARIES BASED ON A LIMITED NUMBER OF SAMPLES AND ARE PROVIDED FOR INFORMATIONAL PURPOSE ONLY. THE PERFORMANCE CHARACTERISTICS LISTED IN THEM ARE NOT TESTED OR GUARANTEED. IN SOME GRAPHS, THE DATA PRESENTED MAY BE OUTSIDE THE SPECIFIED OPERATING RANGE (E.G,. OUTSIDE SPECIFIED POWER SUPPLY RANGE ) AND THEREFORE OUTSIDE THE WARRANTED RANGE. /