SSF11NS65UF 650V N-Channel MOSFET

Transcription

1 Main Product Characteristics V DSS R DS(on) I D 650V 0.32Ω (typ.) 11A TO-220F Marking and Pin S c h e m a ti c Dia g r a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65UF combines an innovative super junction technology and advanced process. This technology achieves low R dson, energy savings, high reliability and uniformity, superior power density and space saving. Absolute Max Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V 10V1 11 I T C = 100 C Continuous Drain Current, V 10V1 7 A I DM Pulsed Drain Current2 44 P C = 25 C Power Dissipation3 31 W Linear Derating Factor 0.25 W/ C V DS Drain-Source Voltage 650 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche L=133mH 250 mj I AS Avalanche L=133mH 1.94 A T J,T STG Operating Junction and Storage Range -55 to +150 C 1/7

2 Thermal Resistance SSF11NS65UF Symbol Characteristics Typ. Max. Units R θjc Junction-to-Case3 4.0 C/W R θja Junction-to-Ambient (t 10s) 4 80 C/W Electrical A =25 C unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 650 V V GS = 0V, ID = 1mA R DS(on) V GS(th) I DSS I GSS Static Drain-to-Source On-resistance V GS=10V,I D = 3.2A Ω 0.72 T J = 125 C Gate Threshold Voltage 2 4 V DS = V GS, I D = 0.32mA V 2.1 T J = 125 C Drain-to-Source Leakage Current 1 V DS =650V,V GS = 0V μa 50 T J = 125 C Gate-to-Source Forward Leakage 100 V GS =30V na -100 V GS = -30V Q g Total Gate Charge 22 I D= 6A, Q gs Gate-to-Source Charge 4.3 nc V DS= 200V, Q gd Gate-to-Drain("Miller") Charge 8 V GS = 10V t d(on) Turn-on Delay Time 11 V GS=10V, V DS =400V, t r Rise Time 6 ns R L=81.6Ω,R GEN=3.4Ω t d(off) Turn-Off Delay Time 29 I D =4.9A t f Fall Time 6 C iss Input Capacitance 804 V GS = 0V C oss Output Capacitance 34 pf V DS = 100V C rss Reverse Transfer Capacitance 3.4 ƒ = 600KHz Source-Drain Ratings and Characteristics I S I SM Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol 11 A (Body Diode) showing the Pulsed Source Current integral reverse 44 A (Body Diode) p-n junction diode. V SD Diode Forward Voltage V I S=4.9A, V GS=0V t rr Reverse Recovery Time 247 ns TJ = 25 C, IF =11A, Q rr Reverse Recovery Charge 2.46 μc di/dt = 100A/μs 2/7

3 Test Circuits and Waveforms E AS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: 1Calculated continuous current based on maximum allowable junction temperature. 2Repetitive rating; pulse width limited by max. junction temperature. 3The power dissipation P D is based on max. junction temperature, using junction-to-case thermal resistance. 4The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C 3/7

4 Typical Electrical and Thermal Characteristics Figure 1. Typical Output Characteristics Figure 2. Gate to Source Cut-off Voltage Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Figure 4: Normalized On-Resistance Vs. Case 4/7

5 Typical Electrical and Thermal Characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6. Typical Capacitance Vs. Drain-to-Source Voltage Figure 7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage Figure 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5/7

6 Mechanical Data TO-220F PACKAGE OUTLINE DIMENSION Symbol Dimensions In Millimeters Dimensions In Inches Min Nom Max Min Nom Max E E E A A A A c D D H e ФP BSC BSC ФP ФP ФP L L L Q1 3 o 5 o 7 o 3 o 5 o 7 o Q2 43 o 45 o 47 o 43 o 45 o 47 o b b b /7

7 Ordering and Marking Information SSF11NS65UF Device Marking: SSF11NS65UF Package (Available) TO-220F Operating Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Units/Inner Inner es/carton TO-220F Units/Carton Reliability Test Program Test Item Conditions Duration Sample Size High Reverse Bias(HTRB) T j =125 C to % of Max V DSS /V CES /V R 168 hours 500 hours 1000 hours 3 lots x 77 devices High Gate Bias(HTGB) T j = % of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices 7/7 Doc.USSSF11NS65UFx1.2