Enhancement Mode N-Channel Power MOSFET

Transcription

1 OSG60RK2x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R DS(on) Low FOM Extremely low switching loss Good stability and uniformity Advanced GreenMOS TM technology Consumer electronics power supply LCD/LED/PDP Portable digital power management PFC Charger

2 General Description OSG60RK2x series use advanced GreenMOS TM technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. V DS@Tjmax I D R DS(ON)@V GS=0V 650V(min) 4A.2Ω(max) TO-25,TO-252,TO-220F Package Information Schematic Diagram Pin Assignment-Top View TO-25 TO-252 TO-220F OSG60RK2A OSG60RK2D OSG60RK2F Absolute Maximum Ratings(TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ±30 V Drain Current-Continuous (Note ) I D 4 A Drain Current- Pulsed (Note 2) I DM 2 A Power Dissipation (Note 3) for TO-25,TO-252 Power Dissipation (Note 3) for TO-220F 24 P D 28.4 W Single Pulsed-Avalanche Energy (Note 6) E AS 00 mj Operation and Storage Junction Temperature T STG,T J -55 to 50 Oriental Semiconductor Copyright reserved /

3 Thermal Characteristics Parameter Symbol Value TO25/TO252 TO220F Unit Thermal Resistance, Junction-to-Case R θjc C/W Thermal Resistance, Junction-to-Ambient (Note 4) R θja C/W Electrical Characteristics(TA=25 unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test condition 600 V GS=0V, I D=250μA Drain-Source Breakdown Voltage BV DSS V V GS=0V,I D=250μA, T j=50 Gate Threshold Voltage V GS(th) V V DS=V GS, I D=250μA.0.2 V GS=0V,I D=2A Drain-Source On-state Resistance R DS(ON) 2.4 Ω V GS=0V,I D=2A, T j=50 Gate-Source Leakage Current I GSS 00 V GS=30V na -00 V GS=-30V Drain-to-Source leakage current I DSS μa V DS=600V,V GS=0V Dynamic Characteristics Input Capacitance C iss pf Output Capacitance C oss 2. pf Reverse Transfer Capacitance C rss 0.9 pf Turn-on Delay Time t d(on) 30.9 ns Turn-on Rise Time t r 20.7 ns Turn-Off Delay Time t d(off) 56.3 ns Turn-Off Fall Time t f 28.7 ns V GS = 0V, V DS = 50V, ƒ = MHZ V GS=0V, V DS =380V, R G=25Ω I D =4A Oriental Semiconductor Copyright reserved /

4 Gate Charge Characteristics Total Gate Charge Q g 8.2 nc Gate-Source Charge Q gs 2.2 nc Gate-Drain Charge Q gd 3.4 nc I D = 4A, V DS= 480V, V GS = 0V Body Diode Characteristics Body-diode Forward Current (NOTE 2) I S 4 Pulsed Source Current I SP 2 A V GS<V th Inverse Diode Forward Voltage V SD.3 V I S=4A, V GS=0V Reverse Recovery Time t rr 62 ns I S=4A, V GS=0V Reverse Recovery Charge Q rr.2 μc di/dt = 00A/μs Oriental Semiconductor Copyright reserved /

5 Typical Electrical and Thermal Characteristics I D, Drain-to-Source Current (A) 7 6 7V 0V 5 4 6V 3 2 5V V GS = 4V V DS, Drain-to-Source Voltage (V) Id,Drain Current(A) 0 VDS=20V 00 o C 25 o C V GS,Gate to Source Voltage(V) Figure. Typ. Output Characteristics Figure 2. Transfer Characteristics C, Capacitance(pF) C iss C oss V GS,Gate to Source Voltage(V) C rss V DS, Drain-to-Source Voltage (V) Q g,gate charge(nc) Figure 3. Typ. Capacitance Figure 4. Gate Charge V (BR)DSS, Drain-to-Source Breakdown Voltage (V) T J, Temperature ( O C ) R DS(on), Drain-source on-state resistance( ) T J,Juntion Temperature( o C) Figure 5. Drain-source breakdown voltage Figure 6. Drain-source on-resistance Oriental Semiconductor Copyright reserved /

6 Is,Reverse Drain Current(A) 0 00 o C 25 o C R DS(ON),On-Resistance( ) V GS =7V V GS =0V V SD, Source to Drain Voltage(V) I D,Drain Current(A) Figure 7. I S-V SD Figure 8. R DS(ON)-I D I D,Drain Current(A) 0. R DS(ON) Limited 00 s ms 0ms 00ms I D,Drain Current(A) 0. R DS(ON) Limited 00 s ms 0ms 00ms DC DC V DS,Drain to Source Voltage(V) V DS,Drain to Source Voltage(V) Figure 9. Safe Operation Area for TO25/TO252 Figure 0. Safe Operation Area for TO220F Oriental Semiconductor Copyright reserved /

7 Test circuits and waveforms Figure : Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Figure 4: Diode Recovery Test Circuit & Waveforms Oriental Semiconductor Copyright reserved /

8 Package Information Figure TO-25 PACKAGE OUTLINE DIMENSION Symbol Dimension In Millimeters Dimension In Inches Min Nom Max Min Nom Max A A b b b2' b c D D 5.300REF 0.209REF E E e 2.286BSC 0.090BSC H L L L Oriental Semiconductor Copyright reserved /

9 Package Information Figure2 TO-252 PACKAGE OUTLINE DIMENSION Oriental Semiconductor Copyright reserved /

10 Package Information Figure3 TO220F PACKAGE OUTLINE DIMENSION Symbol Dimension In Millimeters Dimension In Inches Min Nom Max Min Nom Max E E E A A A A A5 c REF BSC D Q H e ФP L REF 6.70REF 2.54REF 3.8REF REF 0.264REF 0.00REF 0.25REF L L ФP ФP ФP ϴ 3 o 5 o 7 o 3 o 5 o 7 o ϴ2-45 o o - DEP F F F F G G G b b K R - 0.5REF REF - Oriental Semiconductor Copyright reserved /

11 Ordering Information Package Units/Tape Tapes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO TO252 Option TO252 Option TO220F Note. Calculated continuous current based on maximum allowable junction temperature. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. PD is based on max. junction temperature, using junction-to-case thermal resistance. 4. The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. 5. Declared by design, not subject to production. 6. V DD=50V, R G=25Ω, L=20mH, Starting T J=25 C. Oriental Semiconductor Copyright reserved 205 /