Enhancement Mode N-Channel Power MOSFET

Transcription

1 _Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC/DC convertor Invertors

2 General Description uses advanced FSMOS TM technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification applications. V DS, min, pulse R DS(ON), VGS=10 V Q g 60 V 104 A 3.5 mω 66.1 nc Schematic and Package Information Schematic Diagram Pin Assignment Top View SOP8 Absolute Maximum Ratings at T j=25 unless otherwise noted Parameter Symbol Value Unit Drain source voltage V DS 60 V Gate source voltage ±20 V Continuous drain current 1) 26 A Pulsed drain current 2), pulse 104 A Power dissipation 3) P D 5.6 W Single pulsed avalanche energy 5) E AS 80 mj Operation and storage temperature T stg,t j -55 to 150 Oriental Semiconductor Copyright reserved / 9

3 Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-ambient 4) R θja 31 C/W Electrical Characteristics at T j=25 unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition Drain-source breakdown voltage BV DSS 60 V =0 V, =250 μa Gate threshold voltage (th) V V DS=, =250 μa Drain-source on-state resistance R DS(ON) mω =10 V, =20 A Drain-source on-state resistance R DS(ON) mω =4.5 V, =10 A Gate-source leakage current I GSS =20 V na - =-20 V Drain-source leakage current SS 1 μa V DS=60 V, =0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance C iss 5377 pf Output capacitance C oss 1666 pf Reverse transfer capacitance C rss 77.7 pf Turn-on delay time t d(on) 22.5 ns Rise time t r 6.7 ns Turn-off delay time t d(off) 80.3 ns Fall time t f 26.8 ns =0 V, V DS=25 V, ƒ= khz =10 V, V DS=30 V, R G=2 Ω, =25 A Oriental Semiconductor Copyright reserved / 9

4 Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Q g 66.1 nc Gate-source charge Q gs 10.7 nc Gate-drain charge Q gd 10.9 nc Gate plateau voltage V plateau 2.9 V =25 A, V DS=30 V, =10 V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current I S 130 Pulsed source current I SP 390 A <V th Diode forward voltage V SD 1.3 V I S=20 A, =0 V Reverse recovery time t rr 68.3 ns Reverse recovery charge Q rr 73.0 nc Peak reverse recovery current I rrm 1.9 A I S=25 A, di/dt= A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T a=25. 5) V DD=50 V, R G=25 Ω, L=0.3 mh, starting T j=25. Oriental Semiconductor Copyright reserved / 9

5 BV DSS, Drain-source breakdown voltage (V) R DS(ON), On-resistance(W) C, Capacitance (pf), Gate-source voltage(v), Drain current (A) I S, Source current (A), Electrical Characteristics Diagrams V 10 V 6 V 5 V 4.5 V T j = V 3.5 V 10 3 V = 2.5 V V DS, Drain-source voltage (V) V SD, Source-Drain voltage (V) Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics 000 f = khz = 0 V 10.0 = 25 A V DS = 30 V C iss 0 C oss C rss V DS, Drain-source voltage (V) Q g, Gate charge(nc) Figure 3, Typ. capacitances Figure 4, Typ. gate charge = 250 μa = 0 V 6.0m 5.0m = 20 A = 10 V m m m T j, Junction Temperature ( ) 1.0m T j, Junction Temperature ( ) Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance Oriental Semiconductor Copyright reserved / 9

6 , Drain current(a) I S, Source current (A) R DS(ON), On-resistance(W), T j = =3 V 3.5 V 4 V 4.5 V 5 V V SD, Source-Drain voltage (V) V 10 V , Drain current(a) Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistance R DS(ON) Limited 10μs μs 1ms 10ms 0.1 DC V DS, Drain-source voltage(v) Figure 9, Safe operation area T C=25 Oriental Semiconductor Copyright reserved / 9

7 Test circuits and waveforms Figure 1, Gate charge test circuit & waveform Figure 2, Switching time test circuit & waveforms Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms Figure 4, Diode reverse recovery test circuit & waveforms Oriental Semiconductor Copyright reserved / 9

8 Package Information Figure1, SOP8 package outline dimension SYMBOL mm MIN NOM MAX A A A A b L1 L2 b REF BSC c c D E E e L R R h θ 0-8 θ θ θ θ Oriental Semiconductor Copyright reserved / 9

9 Ordering Information Package Units/Reel Reels/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box SOP Product Information Product Package Pb Free RoHS Halogen Free SOP8 yes yes yes Oriental Semiconductor Copyright reserved / 9