N-Channel Power MOSFET
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1 OSG60R180x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching PWM Server power supply Charger
2 OSG60R180F OSG60R180P OSG60R180K OSG60R180H General Description OSG60R180x use advanced GreenMOS TM technology to provide low R DS(ON) low gate charge fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. V DS min@tjmax pulse R DS(ON) VGS= V Q g 650 V 60 A 180 mω 23.3 nc Schematic and Package Information SCHEMATIC DIAGRAM PIN ASSIGNMENT-TOP VIEW TO220F TO220 TO263 TO247 OSG60R180F OSG60R180P OSG60R180K OSG60R180H Absolute Maximum Ratings at T j=25 unless otherwise noted Parameter Symbol Value Unit Drain source voltage V DS 600 V Gate source voltage V GS ±30 V Continuous drain current 1) Continuous drain current 1) T j= A Pulsed drain current 2) pulse 60 A Power dissipation 3) for TO220 TO263 TO247 Power dissipation 3) for TO220F 34 P D 151 W Single pulsed avalanche energy 5) E AS 600 mj MOSFET dv/dt ruggedness V DS=0 480 V dv/dt 50 V/ns Reverse diode dv/dt V DS=0 480 V I SD dv/dt 15 V/ns Operation and storage temperature T stgt j -55 to 150 Oriental Semiconductor Copyright reserved / 12
3 OSG60R180F OSG60R180P OSG60R180K OSG60R180H Thermal Characteristics Parameter Symbol Value TO220/TO263/TO247 TO220F Unit Thermal resistance junction-case R θjc C/W Thermal resistance junction-ambient 4) R θja C/W Electrical Characteristics at T j=25 unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition 600 V GS=0 V =250 μa Drain-source breakdown voltage BV DSS V V GS=0 V =250 μa T j=150 Gate threshold voltage V GS(th) V V DS=V GS =250 μa V GS= V = A Drain-source on-state resistance R DS(ON) 0.38 Ω V GS= V = A T j=150 Gate-source leakage current I GSS 0 V GS=30 V na -0 V GS=-30 V Drain-source leakage current SS 1 μa V DS=600 V V GS=0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance C iss 1440 pf Output capacitance C oss 5 pf Reverse transfer capacitance C rss 3.94 pf Turn-on delay time t d(on) 40.3 ns Rise time t r 49.3 ns Turn-off delay time t d(off) 60 ns Fall time t f 59.2 ns V GS=0 V V DS=50 V ƒ=1 MHz V GS= V V DS=480 V R G=25 Ω =20 A Oriental Semiconductor Copyright reserved / 12
4 OSG60R180F OSG60R180P OSG60R180K OSG60R180H Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Q g 23.3 nc Gate-source charge Q gs 6.6 nc Gate-drain charge Q gd 8.3 nc Gate plateau voltage V plateau 5.6 V =20 A V DS=480 V V GS= V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current I S 20 Pulsed source current I SP 60 A V GS<V th Diode forward voltage V SD 1.4 V I S=20 A V GS=0 V Reverse recovery time t rr ns Reverse recovery charge Q rr 4.2 μc Peak reverse recovery current I rrm 24.3 A V R=400 V I S=20 A di/dt=0 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature using junction-case thermal resistance. 4) The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper in a still air environment with T a=25 C. 5) V DD=150 V R G=25 Ω L=.8 mh starting T j=25 C. Oriental Semiconductor Copyright reserved / 12
5 OSG60R180F OSG60R180P OSG60R180K OSG60R180H Electrical Characteristics Diagrams Drain-source current (A) V 26 V V 6V V GS = 5V V DS Drain-source voltage (V) Drain current(a) V DS =20 V V GS Gate-source voltage(v) Figure 1 Typ. output characteristics 000 Figure 2 Typ. transfer characteristics C Capacitance(pF) 00 0 C iss C oss V GS Gate-source voltage(v) C rss V DS Drain-source voltage (V) Q g Gate charge(nc) Figure 3 Typ. capacitances Figure 4 Typ. gate charge BV DSS Drain-source voltage (V) R DS(on) On-resistance( ) T j Juntion temperature ( ) T j Juntion temperature ( ) Figure 5 Drain-source breakdown voltage Figure 6 Drain-source on-state resistance Oriental Semiconductor Copyright reserved / 12
6 OSG60R180F OSG60R180P OSG60R180K OSG60R180H 0.24 Is Source current(a) R DS(ON) On-resistance( ) V GS =7 V V GS = V V SD Source-drain voltage(v) Drain current(a) Figure 7 Forward characteristic of body diode Figure 8 Drain-source on-state resistance Drain-source current (A) Drain current(a) 1 R DS(ON) Limited us 0 s 1ms ms 0ms DC T C Case temperature ( ) V DS Drain-source voltage(v) Figure 9 Drain current Figure Safe operation area for TO220/TO263/TO247 T C=25 0 Drain current(a) R DS(ON) Limited us 0 s 1ms ms 0ms DC V DS Drain-source voltage(v) Figure 11 Safe operation area for TO220F T C=25 Oriental Semiconductor Copyright reserved / 12
7 OSG60R180F OSG60R180P OSG60R180K OSG60R180H Test circuits and waveforms Figure 1 Gate charge test circuit & waveform Figure 2 Switching time test circuit & waveforms Figure 3 Unclamped inductive switching (UIS) test circuit & waveforms Figure 4 Diode reverse recovery test circuit & waveforms Oriental Semiconductor Copyright reserved / 12
8 OSG60R180F OSG60R180P OSG60R180K OSG60R180H Package Information Figure1 TO220F package outline dimension Symbol Dimension In Millimeters Dimension In Inches Min Nom Max Min Nom Max E E E A A A A A5 c REF BSC D Q 9.40REF 0.370REF H1 6.70REF 0.264REF e 2.54REF 0.0REF ФP L REF REF L L ФP ФP ФP ϴ1 3 o 5 o 7 o 3 o 5 o 7 o ϴ2-45 o o - DEP F F F F G G G b b K R - 0.5REF REF - Oriental Semiconductor Copyright reserved / 12
9 OSG60R180F OSG60R180P OSG60R180K OSG60R180H Package Information Figure2 TO220 package outline dimension Symbol Min Nom Max A A A b b c D D D E E e e BSC 5.08 BSC H L L ΦP Q Oriental Semiconductor Copyright reserved / 12
10 OSG60R180F OSG60R180P OSG60R180K OSG60R180H Package Information Figure3 TO263 package outline dimension Oriental Semiconductor Copyright reserved 2016 / 12
11 OSG60R180F OSG60R180P OSG60R180K OSG60R180H Package Information Figure4 TO247 package outline dimension Oriental Semiconductor Copyright reserved / 12
12 OSG60R180F OSG60R180P OSG60R180K OSG60R180H Ordering Information Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO220F TO TO TO Product Information Product Package Pb Free RoHS Halogen Free OSG60R180F TO220F yes yes no OSG60R180FF TO220F yes yes yes OSG60R180P TO220 yes yes no OSG60R180PF TO220 yes yes yes OSG60R180K TO263 yes yes no OSG60R180KF TO263 yes yes yes OSG60R180H TO247 yes yes no OSG60R180HF TO247 yes yes yes Oriental Semiconductor Copyright reserved / 12
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UNISONIC TECHNOLOGIES CO., LTD 16A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS
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UNISONIC TECHNOLOGIES CO., LTD 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N50 is a N-channel enhancement mode power MOSFET using UTC s advanced planar stripe and DMOS technology to provide perfect
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UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
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General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for
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UNISONIC TECHNOLOGIES CO., LTD 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
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UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
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UNISONIC TECHNOLOGIES CO., LTD 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC s advanced technology. This technology allows a minimum on-state resistance,
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UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
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UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
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