LSC11N65E/LSD11N65E/ LSE11N65E/LSG11N65E LonFET

Transcription

1 Lonten N-channel 650V, 11A, 0.38Ω TM Power MOSFET Description TM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary V T j,max 700V R DS(on),max 0.38Ω M Q g,typ 30A 34nC Features Ultra low R DS(on) Ultra low gate charge (typ. Q g = 34nC) High body diode ruggedness Easy to use 100% UIS tested RoHS compliant Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, LED Driver, Server, Telecom and UPS. D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 650 V Continuous drain current ( T C = 25 C ) ( T C = 100 C ) 11 7 A A Pulsed drain current 1) M 30 A Gate-Source voltage V GSS ±20 V Avalanche energy, single pulse 2) E AS 210 mj Avalanche energy, repetitive 3) E AR 0.32 mj Avalanche current, repetitive 3) I AR 1.8 A Power Dissipation TO-220 ( T C = 25 C ) P D 83 W Power Dissipation TO-220F ( T C = 25 C ) P D 31 W Operating and Storage Temperature Range T j, T STG -55 to +150 C Continuous diode forward current ( T C = 25 C ) I S 11 A Diode pulse current ( T C = 25 C ) I S,pulse 30 A Version

2 Thermal Characteristics TO-220/TO-263/TO-252 Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case R θjc 1.5 C/W Thermal Resistance, Junction-to-Ambient R θja 62 C/W Thermal Characteristics TO-220F Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case R θjc 4.0 C/W Thermal Resistance, Junction-to-Ambient R θja 80 C/W Package Marking and Ordering Information Device Device Package Marking LSC11N65E TO-220 LSC11N65E LSD11N65E TO-220F LSD11N65E LSE11N65E TO-263 LSE11N65E LSG11N65E TO-252 LSG11N65E Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BV DSS V GS=0V, =0.25mA V Gate threshold voltage V GS(th) V DS=V GS, =0.25mA V Drain cut-off current SS V DS=650V, V GS=0V, μa Gate leakage current, Forward I GSSF V GS=20V, V DS=0V na Gate leakage current, Reverse I GSSR V GS=-20V, V DS=0V na Drain-source on-state resistance R DS(on) V GS=10V, =5.5A - T j = 25 C Ω T j = 150 C Gate resistance R G f=1mhz, open drain Ω Dynamic characteristics Input capacitance C iss V DS =100V, V GS =0V, Output capacitance C oss f =1MHz pf Reverse transfer capacitance C rss Turn-on delay time t d(on) V DD =400V, =4.8A Rise time t r R G =3.4Ω, V GS=13V ns Turn-off delay time t d(off) Fall time t f Version

3 Gate charge characteristics Gate to source charge Q gs V DD=480V, =4.8A, Gate to drain charge Q gd V GS=0 to 10V Gate charge total Q g Gate plateau voltage V plateau V Reverse diode characteristics Diode forward voltage V SD V GS=0V, I F=5.5A V Reverse recovery time t rr V DS=400V, I F=4.8A, Reverse recovery charge Q rr di F/dt=100A/μs μc nc ns Peak reverse recovery current I rrm A Notes: 1. Limited by maximum junction temperature, maximum duty cycle is I AS = 1.8A, V DD = 50V, Starting T j= 25 C. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Version

4 R DS (on) (Ω) R DS (on) (Ω) Drain current (A) Drain current (A) Electrical Characteristics Diagrams Figure 1. Output Characteristics T c = 25 C Figure 2. Output Characteristics T c = 125 C =f (V DS T j=25 C Parameter: V GS =f (V DS T j =125 C Parameter: V GS Drain source voltage V DS Drain source voltage V DS Figure 3. On-Resistance Variation vs. Drain Current Figure 4. On-Resistance Variation vs. Temperature R DS (on) =f ( T j =125 C Parameter: V GS R DS (on) =f (T j =5.5A; V GS =10V Drain current (A) Junction temperature T j ( C) Version

5 Capacitance (pf) Gate-Source Voltage V GS Drain current (A) Drain-Source Breakdown Voltage BV DSS Figure 5. Transfer Characteristics Figure 6. Breakdown Voltage vs. Temperature =f (V GS V DS =20V Parameter: T j BV DSS =f (T j =0.25mA Gate source voltage V GS Junction temperature T j ( C) Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd C =f (V DS V GS =0V; F=1MHz V GS =f (Q g =4.8A pulsed; Parameter: V DD Drain-Source Voltage V DS Total Gate Charge Q G (nc) Version

6 Drain current (A) power dissipation P D (W) Drain current (A) power dissipation P D (W) Figure 9. Power Dissipation(Non FullPAK) Figure 10. Power Dissipation(FullPAK) P D =f (T c ) P D =f (T c ) Case temperature T c ( C) Case temperature T c ( C) Figure 11. Safe Operating Area(Non FullPAK) Figure 12. Safe Operating Area(FullPAK) =f (V DS V GS >7V; T c =25 C; D=0;Parameter:t p =f (V DS V GS >7V; T c =25 C; D=0;Parameter:t p Drain-Source Voltage V DS Drain-Source Voltage V DS Version

7 Z thjc (K/W) Z thjc (K/W) Figure 13. Transient Thermal impedance (Non FullPAK) Figure 14. Transient Thermal impedance (FullPAK) Z =f (t thjc P Parameter:D= t P /T Z thjc =f (t P Parameter:D= t P /T Pulse Width t (s) Pulse Width t (s) Version

8 Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms L V DS R G V DD BV DSS V DD V DS V g I AR V g Version

9 L L1 D1 D L2 H1 Q Mechanical Dimensions for TO-220 E E1 A A1 COMMON DIMENSIONS Ø p SYMBOL MM INCH MIN NOM MAX MIN NOM MAX Ø p1 A A DEP A b b2 θ3 θ2 b c D b D DEP e e1 C A2 E E E Øp e 2.54BSC 0.1BSC e1 5.08BSC 0.2BSC E2 H L L L2 2.50REF 0.098REF Øp Q θ θ TO-220 Part Marking Information Lonten Logo AB Foundry & Assembly Code YWW Date Code Lonten LSC11N65E ABYWW99 Part Number 99 Manufacturing Code Version

10 L L1 D1 D F2 Q H1 F4 F3 F1 F1 Mechanical Dimensions for TO-220F E G1 Ø P2 A A1 DEP Ø P1 G2 SYMBOL COMMON DIMENSIONS MM INCH MIN NOM MAX MIN NOM MAX Ø P A5 A2 Ø P3 E A θ2 A Ø P1 DEP A A b1 Ø P1 A5 1.00REF 0.039REF C G3 A4 D b2 Q 9.20REF 0.362REF H1 6.70REF 0.264REF e 2.54BSC 0.1BSC e C ØP 3.183REF 0.125REF L L D1 9.17REF 0.362REF ØP ØP E E1 K1 ØP3 3.45REF 0.136REF θ DEP F F F F G G G b TO-220F Part Marking Information b E K Lonten Logo AB Foundry & Assembly Code YWW Date Code Lonten LSD11N65E ABYWW99 Part Number 99 Manufacturing Code Version

11 L L1 H D1 L2 H2 Mechanical Dimensions for TO-263 E A A1 SYMBOL COMMON DIMENSIONS MM INCH MIN NOM MAX MIN NOM MAX Ø P1 DEP A A A A A3 A2 θ2 b b c b1 b c D E E θ2 e L4 θ e 2.54 BSC BSC H H L L L REF REF E2 L BSC BSC θ θ ØP DEP TO-263 Part Marking Information Lonten Logo AB Foundry & Assembly Code YWW Date Code Lonten LSE11N65E ABYWW99 Part Number 99 Manufacturing Code Version

12 A L4 D L5 L3 Mechanical Dimensions for TO-252 COMMON DIMENSIONS E SYMBOL mm b3 MIN NOM MAX c1 c A1 L2 H D1 c A A Ø TOP E-MARK A b b A2 E1 b c c D e b D1 5.30REF E θ2 E e 2.286BSC K b C θ H C L L BASE METAL 基材 b b1 PLATING 镀层 (L1) L1 L2 2.90REF 0.51BSC L L SECTION C-C L θ θ K 0.40REF TO-252 Part Marking Information Lonten Logo AB Foundry & Assembly Code YWW Date Code Lonten LSG11N65E ABYWW99 Part Number 99 Manufacturing Code Version

13 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Jan Revision 1.0 Version