11A, 650V, Super Junction N-Channel Power MOSFET SRC11N65. Symbol SRC11N65. G: Green

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1 General Description The Sanrise SRC11N65 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance and fast switching time, making it especially suitable for applications which require superior power density and outstanding efficiency. The SRC11N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. The SRC11N65 is available in and TO- 220F packages. Features Ultra Low R DS(ON) = VGS = 10V. Ultra Low Gate Charge, Qg=27.8nC typ. 100% UIS Tested Application High Power LED Lighting Power High Performance Adapter TV Symbol Figure 1 Symbol of SRC11N65 Package Type TO-220F Figure 2 Package Type of SRC11N65 Ordering Information Circuit Type Package TC: TF: TO-220F SRC11N65 E: Lead Free G: Green Blank: Tube TR: Tape & Reel Package Part Number Marking ID Packing Lead Free Green Lead Free Green Type SRC11N65TC-E SRC11N65TC-G SRC11N65TCE SRC11N65TCG Tube TO-220F SRC11N65TF-E SRC11N65TF-G SRC11N65TFE SRC11N65TFG Tube

2 Absolute Maximum Ratings Parameter Symbol Rating Unit Drain-Source Voltage V DSS 700 V Continuous Drain Current T C =25ºC 11 I T D C =100ºC 7.4 A Pulsed Drain Current (Note 2) I DM 30.7 A Gate-Source Voltage V GSS ±30 V Avalanche Energy, Single Pulse (Note 3) E AS 357 mj Avalanche Energy, Repetitive (Note 2) E AR 12.8 mj Avalanche Current, Repetitive (Note 2) I AR 11 A Continuous Diode Forward Current I S 11 A Diode Pulse Current I S,pulse 30.7 A Power Dissipation (T C =25ºC) P TO-220F D 33.8 W Thermal Resistance, Junction-to-Case 0.95 R TO-220F θjc 3.7 ºC/W Thermal Resistance, Junction-to-Ambient 38 R TO-220F θja 75 ºC/W Operating Junction Temperature T J 150 ºC Storage Temperature T STG -55 to 150 ºC Lead Temperature (Soldering, 10 sec) T LEAD 260 ºC Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. I AS = 3.5A, V DD = 60V, R G = 25Ω, Starting T J = 25 C

3 Electrical Characteristics T J = 25, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Statistic Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V, I D =250uA V Zero Gate Voltage Drain Current I DSS V DS =650V, V GS =0V ua Gate-Body Leakage Current Forward I GSSF V GS =30V, V DS =0V Reverse I GSSR V GS =-30V, V DS =0V na Gate Threshold Voltage V GS(TH) V DS =V GS, I D =250uA V V GS =10V, T J =25ºC Static Drain-Source On-Resistance R DS(ON) I D =5.5A T J =150ºC Ω Gate Resistance R G f=1mhz, Open Drain 0.91 Ω Dynamic Characteristics Input Capacitance C ISS V DS =25V, V GS =0V, Output Capacitance C OSS f=1mhz Reverse Transfer Capacitance C RSS pf Turn-on Delay Time t d(on) 16.3 Rise Time t r V DD =380V, I D =5.5A 14.1 Turn-off Delay Time t d(off) R G =4.7Ω, V GS =10V 39.5 ns Fall Time t f 5.1 Gate Charge Characteristics Gate to Source Charge Q gs 6.1 Gate to Drain Charge Q gd V DD =480V, I D =5.5A 13.2 nc Gate Charge Total Q g V GS =0 to 10V 27.8 Gate Plateau Voltage V plateau 5.45 V Reverse Diode Characteristics Drain-Source Diode Forward Voltage V SD V GS =0V, I SD =5.5A V Reverse Recovery Time t rr 441 ns V R =50V, I F =11A Reverse Recovery Charge Q rr 3.62 uc di F /dt=100a/us Peak Reverse Recovery Current I rrm 15.3 A

4 Electrical Characteristics Diagram Figure 3 Breakdown Voltage vs. Temperature Figure 4 On-Resistance Vatiation vs. Drain Current Figure 5 On-Resistance vs. Temperature Figure 6 On-Region Characteristics Figure 7 Transfer Characteristics Figure 8 Threshold Voltage vs. Temperature

5 Figure 9 Gate Charge Characteristics Figure 10 Capacitance Characteristics Figure 11 Transient Thermal Response Curve 140 Drain Power Dissipation P D (W) Case Temperature Tc ( O C) Figure 11 Power Dissipation vs. Temperature Figure 12 Maximum Safe Operating Area

6 Mechanical Dimensions Unit: mm Dim. Min. Max. A a B b b C D d d d d E F G H K øp p 3 o 3 o All dimensions is in mm.

7 Mechanical Dimensions (Continued) TO-220F Unit: mm TO-220F Dim. Min. Max. A a B b b C D d d d G H E F øp p 3 o 3 o All dimensions is in mm.

8 Sanrise Technology Limited Company IMPORTANT NOTICE Sanrise Technology Limited Company reserves the right to make changes without further notice to any products or specifications herein. Sanrise Technology Limited Company does not assume any responsibility for use of any its products for any particular purpose, nor does Sanrise Technology Limited Company assume any liability arising out of the application or use of any its products or circuits. Sanrise Technology Limited Company does not convey any license under its patent rights or other rights nor the rights of others. Main Site: - Headquarter Sanrise-Tech Technology Company Limited Rm , Building B, SDG Information Port, No.2, Kefeng Road, Science & Technology Park, Nanshan District, Shenzhen, China Tel: Fax: Shanghai Office Sanrise-Tech Technology Company Limited Rm.503, Building B, Minggu Technology Park, No.7001, Zhongchun Road, Minhang District, Shanghai, China Tel: / Fax: