Symbol SRC65R480E. D: TO-252 TR: Tape & Reel TF: TO-220F
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1 General Description The Sanrise is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding efficiency. The break down voltage is 650V and it has a high rugged avalanche characteristics. The is available in TO-252 and TO-220F packages. Features Ultra Low R DS(ON) = V GS = 10V. Ultra Low Gate Charge, Qg=18.8nC typ. Fast switching capability Robust design with better EAS performance EMI Improved Design (SnowMOS TM Gen.2) Symbol Figure 1 Symbol of Package Type TO-252 TO-220F Figure 2 Package Types of Application TV Power High Performance Charger / Adapter LED Lighting Power Ordering Information Circuit Type E: Lead Free G: Green Package Blank: Tube D: TO-252 TR: Tape & Reel TF: TO-220F Part Number Marking ID Package Packing Type Lead Free Green Lead Free Green TO-252 DTR-E DTR-G DE DG Tape & Reel TO-220F TF-E TF-G TFE TFG Tube
2 Absolute Maximum Ratings Parameter Symbol Rating Unit Drain-Source Voltage V DSS 680 V Gate-Source Voltage V GSS ±30 V Continuous Drain Current T C =25ºC 8.0 I T D C =125ºC 3.5 A Pulsed Drain Current (Note 2) I DM 25.0 A Avalanche Energy, Single Pulse (Note 3) E AS 108 mj Avalanche Energy, Repetitive (Note 2) E AR 0.15 mj Avalanche Current, Repetitive (Note 2) I AR 1.3 A Continuous Diode Forward Current I S 8.0 A Diode Pulse Current I S.PULSE 25.0 A Operating Junction Temperature T J 150 ºC Storage Temperature T STG -55 to 150 ºC Lead Temperature (Soldering, 10 sec) T LEAD 300 ºC Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. I AS = 1.3A, V DD = 60V, R G = 25Ω, Starting T J = 25 C
3 Electrical Characteristics T J = 25, unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Statistic Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V, I D =250uA 650 V Zero Gate Voltage Drain Current I DSS V DS =650V, V GS =0V 1 ua Gate-Body Leakage Current Forward I GSSF V GS =30V, V DS =0V 100 Reverse I GSSR V GS =-30V, V DS =0V -100 na Gate Threshold Voltage V GS(TH) V DS =V GS, I D =250uA V Static Drain-Source On-Resistance R DS(ON) V GS =10V, I D =4.0A mω Gate Resistance R G f=1mhz, Open Drain 8.9 Ω Dynamic Characteristics Input Capacitance C ISS 356 V DS =50V, V GS =0V, Output Capacitance C OSS 36.8 f=1mhz Reverse Transfer Capacitance C RSS 21.5 pf Effective output capacitance, energy related NOTE5 C O(er) V GS =0V, V DS =0 480V Effective output capacitance, time related NOTE6 C O(tr) 79 Turn-on Delay Time t d(on) 10 Rise Time t r V DD =400V, I D =4.0A 12 Turn-off Delay Time t d(off) R G =10Ω, V GS =10V 36 ns Fall Time t f 14 Gate Charge Characteristics Gate to Source Charge Q gs 4.2 Gate to Drain Charge Q gd V DD =480V, I D =4.0A 9.5 nc Gate Charge Total Q g V GS =0 to 10V 18.8 Gate Plateau Voltage V plateau 5.9 V Reverse Diode Characteristics Drain-Source Diode Forward Voltage V SD V GS =0V, I SD =4.0A V Reverse Recovery Time t rr 206 ns V R =400V, I F =4.0A Reverse Recovery Charge Q rr 1.63 uc di F /dt=100a/us Peak Reverse Recovery Current I rrm 15.8 A Note: 5. C O(er) is a fixed capacitance that gives the same stored energy as C OSS while V DS is rising from 0 to 480V 6. C O (tr) is a fixed capacitance that gives the same charging time as C OSS while V DS is rising from 0 to 480 V 17 pf
4 Typical Performance Characteristics Figure 1: Power Dissipation Figure 2: Max. Transient Thermal Impedance P tot = f(t c ) Z( thjc ) = f(t p ); parameter: D = t p /T Figure 3: Safe Operating Area Figure 4: Safe Operating Area I D = f(v DS ); T c = 25ºC; V GS >7V; parameter t p I D = f(v DS ); T c = 80ºC; V GS >7V; parameter t p
5 Figure 5: Typ. Output Characteristics Figure 6: Typ. Output Characteristics I D = f(v DS ); Tj= 25ºC; parameter: V GS I D = f(v DS ); T j = 125ºC; parameter: V GS Figure 7: Typ. Drain-Source On-State Resistance Figure 8: Typ. Drain-Source On-State Resistance R DS(ON) =f(i D ); T j =125ºC; parameter: V GS R DS(ON) =f(t j ); I D =4.0A; V GS =10V
6 Figure 9: Typ. Transfer Characteristics Figure 10: Typ. Gate Charge I D = f(v GS ); V DS = 20V V GS = f(q gate ), I D =4.0A pulsed Figure 11: Drain-Source Breakdown Voltage Figure 12: Forward Characteristics of Reverse Diode V BR(DSS) =f(t j ); I D =1mA I F =f(v SD ); parameter: T j
7 Figure 13: Avalanche Energy Figure 14: Typ. Capacitances E AS =f(t j ); I D =1.3A; V DD =60V C=f(V DS ); V GS =0; f=1mhz Figure 15: C OSS Stored Energy E OSS =f(v DS )
8 Test Circuits 1. Gate Charge Test Circuit & Waveform 2. Switch Time Test Circuit 3. Unclaimed Inductive Switching Test Circuit & Waveforms
9 4. Test Circuit and Waveform for Diode Characteristics
10 Mechanical Dimensions TO-252 Unit: mm Symbol Dimensions(mm) Min. Typ. Max. A A A b b b c D D E E e 2.286(BSC) H L L L L L L L θ 0-8
11 Mechanical Dimensions (Continued) TO-220F Unit: mm Dimensions(mm) Symbol Min. Typ. Max. A A A A b b c D D E E e 2.54(BSC) H (H1) - (0.81) - L L ΦP Q
12 Sanrise Technology Limited Company IMPORTANT NOTICE Sanrise Technology Limited Company reserves the right to make changes without further notice to any products or specifications herein. Sanrise Technology Limited Company does not assume any responsibility for use of any its products for any particular purpose, nor does Sanrise Technology Limited Company assume any liability arising out of the application or use of any its products or circuits. Sanrise Technology Limited Company does not convey any license under its patent rights or other rights nor the rights of others. Main Site: - Headquarter Sanrise Technology Limited Company Rm.601~603, Building B, SDG Information Port, No.2, Kefeng Road, Science & Technology Park, Nanshan District, ShenZhen, China Tel: Fax: Shanghai Office Sanrise Technology Limited Company No. 1159, Cailun Road, Zhangjiang HiTech Park, Pudong District, Shanghai, China Tel:
Symbol SRC65R650. D1: TO-251 TR: Tape & Reel D: TO-252 S2: TO TF: TO-220F
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MOSFET N 6V 7.5A,2 OHM 8N6 7.5 Amps,6/65 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N6 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
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UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and
More informationUNISONIC TECHNOLOGIES CO., LTD UT60N03
UNISONIC TECHNOLOGIES CO., LTD UT60N03 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET DESCRIPTION TO-220 TO-25 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance.
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UNISONIC TECHNOLOGIES CO., LTD 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC s advanced technology to provide the customers with a minimum on-state resistance,
More information700V Super-Junction Power MOSFET
700V Super-Junction Power MOSFET DESCRIPTION 700V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs, designed according to the SJ principle.
More information-55 to 150 C Operating Junction Temperature Range -55 to 150 C. Parameter
N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low Gate Charge Fast Switching Performance R DS(ON) 25mΩ G RoHS-compliant, halogen-free I D 28A S BV DSS 30V Description Advanced Power
More information700V Super-Junction Power MOSFET
700V Super-Junction Power MOSFET FEATURES Very low FOM R DS(on) Q g 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction
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UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
More information30V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD12N3AT, TTP12N3AT 3V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in
More information40V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 40V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters
More informationT C =25 unless otherwise specified
500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
More informationUNISONIC TECHNOLOGIES CO., LTD UTT18P10
UNISONIC TECHNOLOGIES CO., LTD UTT18P10-100V, -18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
More informationHFI50N06A / HFW50N06A 60V N-Channel MOSFET
HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche
More information20V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTE8N2AT 2V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC
More informationP2G N2D/P2D P1S/P2S P1G N2G N1S N2S SO-8 N1G N1D/P1D. Symbol Parameter
Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Full Bridge Applications RoHS-compliant, halogen-free Description PG ND/PD PS/PS PG SO-8 NG
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UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationUNISONIC TECHNOLOGIES CO., LTD UTT52N15H
UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
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UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS
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UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
More informationFeatures. Information SOT-223. Part Number. Marking. Package SOT-223 SNN01Z60. Unit. V Gate-source voltage A A I DM T c =25 C I D.
Logic Level Gate Drive Application SNN01Z60Q Logic Level N-Ch Power MOSFET Features Logic levell gate drive Max. R DS(ON N) = 135mΩ at V GS = 10V, I D = 0.5A Low R DS(on) provides higher efficiency ESD
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UNISONIC TECHNOLOGIES CO., LTD 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC s proprietary,
More informationUNISONIC TECHNOLOGIES CO., LTD UTD408
UNISONIC TECHNOLOGIES CO., LTD UTD408 N-CHANNEL ENHANCEMENT MODE FEATURES * R DS(ON) < 18 mω @ V GS =10V, I D =18A R DS(ON) < 27 mω @ V GS =4.5V, I D =10A * Low capacitance * Optimized gate charge * Fast
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UNISONIC TECHNOLOGIES CO., LTD 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
More informationPFP15T140 / PFB15T140
FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel
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