700V Super-Junction Power MOSFET
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1 700V Super-Junction Power MOSFET FEATURES Very low FOM R DS(on) Q g 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device TPA70R170M TPB70R170M TPC70R170M TPP70R170M TPV70R170M TPW70R170M Package TO-220F TO-263 TO-262 TO-220 TO-3PN TO-247 Marking 70R170M 70R170M 70R170M 70R170M 70R170M 70R170M Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value TO-220,TO-263,TO-262, TO-3PN,TO-247 TO-220F Drain-Source Voltage (V GS = 0V) V DSS 700 V Unit Continuous Drain Current T C = 25ºC T C = 100ºC 12 I D 20 A Pulsed Drain Current (note1) I DM 60 A Gate-Source Voltage V GSS ±30 V Single Pulse Avalanche Energy (note2) E AS 484 mj Avalanche Current (note1) I AR 3.5 A Repetitive Avalanche Energy (note1) E AR 0.7 mj MOSFET dv/dt ruggedness, V DS = V dv/dt 50 V/ns Reverse diode dv/dt, V DS = 0 480V, I SD I D dv/dt 15 V/ns Power Dissipation (T C = 25ºC) P D W Operating Junction and Storage Temperature Range T J, T stg -55~+150 ºC Thermal Resistance Parameter Symbol Value TO-220 TO-3PN TO-247 TO-220F Unit Thermal Resistance, Junction-to-Case R thjc Thermal Resistance, Junction-to-Ambient R thja ºC/W V1.0 1
2 Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = 250µA V Zero Gate Voltage Drain Current I DSS V DS = 700V, V GS = 0V, T J = 25ºC V DS = 700V, V GS = 0V, T J = 150ºC μa Gate-Source Leakage I GSS V GS = ±30V ±100 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250µA V Drain-Source On-Resistance (Note3) R DS(on) V GS = 10V, I D = 10A Ω Gate resistance R G f = 1.0MHz open drain Ω Dynamic Input Capacitance C iss V GS = 0V, Output Capacitance C oss V DS = 100V, f = 1.0MHz Reverse Transfer Capacitance C rss Total Gate Charge Q g Gate-Source Charge Q gs V DD = 520V, I D = 20A, V GS = 10V Gate-Drain Charge Q gd pf nc Turn-on Delay Time t d(on) Turn-on Rise Time t r V DD = 400V, I D = 20A, Turn-off Delay Time t d(off) R G = 25Ω ns Turn-off Fall Time t f Drain-Source Body Diode Characteristics Continuous Body Diode Current I S T C = 25ºC Pulsed Diode Forward Current I SM A Body Diode Voltage V SD T J = 25ºC, I SD = 20A, V GS = 0V V Reverse Recovery Time t rr ns Reverse Recovery Charge Q rr V R = 400V, I F = I S, di F /dt = 100A/μs μc Peak Reverse Recovery Current I rrm A Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. I AS = 3.5A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. Pulse Test: Pulse Width 300μs, Duty Cycle 1% V1.0 2
3 Typical Characteristics T J = 25ºC, unless otherwise noted V GS, Gate-to-Source Voltage (V) R DS(on), On-Resistance (Ω) I D, Drain Current (A) Figure 3. On-Resistance vs. Drain Current V 10V 8V 7V 6V 5.5V 5V Figure 1. Output Characteristics V DS, Drain-to-Source Voltage (V) V GS = 10V T J = 25ºC I D, Drain Current (A) Figure 5. Gate Charge V DD = 120V V DD = 520V Q g, Total Gate Charge (nc) I s, Source Current (A) Capacitance (pf) I D, Drain Current (A) V GS = 0 f = 1MHz Figure 2. Transfer Characteristics V DS = 20V V GS, Gate-to-Source Voltage (V) Figure 4. Capacitance C iss C oss C rss V DS, Drain-to-Source Voltage (V) Figure 6. Body Diode Forward Voltage T J = 125ºC T J = 25ºC T J = 25ºC T J = 150ºC V SD, Source-to-Drain Voltage (V) V1.0 3
4 Typical Characteristics T J = 25ºC, unless otherwise noted Z thjc, Thermal Impedance ( C/W) R DS(on), (Normalized) Figure 7. On-Resistance vs. Junction Temperature T J, Junction Temperature (ºC) Figure 9. Transient Thermal Impedance TO-TO-263/TO-262/TO-220TO-3PN/TO V GS = 10V I D = 10A T p, Pulse Width (s) Z thjc, Thermal Impedance ( C/W) V GS(th), (Variance) Figure 8. Threshold Voltage vs. Junction Temperature T J, Junction Temperature (ºC) Figure 10. Transient Thermal Impedance TO-220F T p, Pulse Width (s) I D = 250µA 10-1 D = 0.5 D = 0.5 D = 0.2 D = 0.2 D = 0.1 D = D = D = 0.05 D = 0.02 D = 0.02 D = 0.01 D = 0.01 Single Pulse Single Pulse Figure 11. Safe operation area for TO-263/TO-262/TO-220/TO-3PN/TO Figure 12. Safe operation area for TO-220F I D, Drain Current(A) t p = 1us t p = 10us t p = 100us t p = 1ms t p = 10ms DC I D, Drain Current(A) t p = 1us t p = 10us t p = 100us t p = 1ms t p = 10ms DC V DS, Drain-Source Voltage(V) V DS, Drain-Source Voltage(V) V1.0 4
5 Figure A:Gate Charge Test Circuit and Waveform Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V1.0 5
6 TO-220F E e 2.54BSC A A A A c c D L L ΦP ΦP F G b H1 6.70REF b V1.0 6
7 TO-263 A A E E A e 2.54BSC A b b c H H L L D L4 0.25BSC D θ V1.0 7
8 TO-262 A A E E A e 2.54BSC b b c D D G H L L L D V1.0 8
9 TO-220 A E A b e e1 2.54BSC 5.08BSC b c D D D H L L ΦP Q E V1.0 9
10 TO-3PN A D REF A A E E b e 5.45 TYP b b H H c D D ΦP1 ΦP REF 3.50REF V1.0 10
11 TO-247 Symbol Min. Max. A B C D E F G H I Symbol Min. Max. K L M N O P Q R Φ3.50 Φ3.70 S Φ7.10 Φ7.30 V1.0 11
12 Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Wuxi Unigroup s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Wuxi Unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. Information (including circuit diagrams and circuit parameters) herein is for example only. It is not guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. V1.0 12
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Power MOSFET IRFIB6N60A, SiHFIB6N60A PRODUCT SUMMARY V DS (V) 600 R DS(on) (Ω) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single TO-220 FULLPAK D G FEATURES Low Gate Charge
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) () = 0.85 Q g max. (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single D TO-220AB G G DS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free
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General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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Automotive P-Channel 4 V (D-S) 75 C MOSFET SQM43EL TO-263 S G S D G Top View D P-Channel MOSFET PRODUCT SUMMARY V DS (V) -4 R DS(on) () at V GS = - V.3 R DS(on) () at V GS = -4.5 V.38 I D (A) -2 Configuration
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion
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Power MOSFET PRODUCT SUMMARY V DS (V) 00 R DS(on) ( ) = 0 V. Q g (Max.) (nc) 38 Q gs (nc).0 Q gd (nc) Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES DESCRIPTION. IRF720PbF SiHF720-E3 IRF720 SiHF720 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 400 V R DS(on) (Ω) = 10 V 1.8 Q g (Max.) (nc) 0 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single TO-0AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel
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SiDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).68 at V GS =. V.6 a nc.8 at V GS =. V. TO-6 (SOT-) FEATURES Halogen-free According to IEC 69-- Definition TrenchFET
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