Super Junction MOSFET
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- Naomi Montgomery
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1 APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv / dt Rated Popular TO-247 or Surface Mount D 3 package. G D S MAXIMUM RATINGS All Ratings per die: T C = 25 C unless otherwise specifi ed. Symbol Parameter APT77N6B_SC6 UNIT S -Source Voltage 6 Volts Continuous T C = 25 C 77 Continuous T C = C 49 Amps M Pulsed Current 272 Gate-Source Voltage Continuous ±2 Volts P D Total Power T C = 25 C 48 Watts,T STG Operating and Storage Junction Temperature Range - 55 to 5 T L Lead Temperature:.63" from Case for Sec. 3 C I AR Avalanche Current Amps E AR Repetitive Avalanche Energy 2 ( Id =3.4A, Vdd = 5V ) 2.96 E AS Single Pulse Avalanche Energy ( Id = 3.4A, Vdd = 5V ) 954 mj STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV (DSS) -Source Breakdown Voltage ( = V, = 25μA) 6 Volts R DS(on) -Source On-State Resistance 3 ( = V, = 44.4A).37.4 Ohms Zero Gate Voltage Current ( = S, = V, T C = 25 C) 25 SS Zero Gate Voltage Current ( = S, = V, T C = 5 C) 25 μa I GSS Gate-Source Leakage Current ( = ±2V, = V) ± na (th) Gate Threshold Voltage ( =, = 2.96mA) Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website Rev A 8-2
2 DYNAMIC CHARACTERISTICS APT77N6B_SC6 Symbol Characteristic Test Conditions MIN TYP MAX UNIT C iss Input Capacitance = V 36 C oss Output Capacitance = 25V 44 C rss Reverse Transfer Capacitance f = MHz 29 pf Q g Total Gate Charge 4 V = V 26 GS Q gs Gate-Source Charge = 4V 38 Q = 25 C gd Gate- ("Miller") Charge 44 nc Turn-on Delay Time INDUCTIVE SWITCHING 8 t = V r Rise Time 27 = 38V t d(off) Turn-off Delay Time = 25 C 65 t f Fall Time = 5.Ω 8 2 Turn-on Switching Energy 5 INDUCTIVE 25 C 67 = 4V, = 5V E off Turn-off Switching Energy = 77A, = 5Ω 288 Turn-on Switching Energy 5 INDUCTIVE 25 C 23 E off Turn-off Switching Energy = 4V, = 5V = 77A, = 5Ω 3 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I S Continuous Source Current (Body Diode) 77 I SM Pulsed Source Current (Body Diode) 23 Amps V SD Diode Forward Voltage 3 ( = V, I S = -77A).2 Volts dv / dt Peak Diode Recovery dv 6 / dt 5 V/ns r Q rr I RRM Reverse Recovery Time = A/μs) Reverse Recovery Charge = A/μs) Peak Recovery Current = A/μs) THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R θjc Junction to Case.26 C/W R θja Junction to Ambient 4 Repetitive Rating: Pulse width limited by maximum junction temperature 4 See MIL-STD-75 Method Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery. P AV = E AR *f. Pulse width tp limited by Tj max. 6 Maximum 25 C diode commutation speed = di/dt 6A/μs 3 Pulse Test: Pulse width < 38 μs, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein..3 T j = 25 C 95 ns T j = 25 C 32 μc T j = 25 C 6 Amps ns μj 5-72 Rev A 8-2 Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE Note: Duty Factor D = t /t 2 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration P DM t t 2
3 Typical Performance Curves V V 25 > (ON) x R DS (ON)MAX. 25μSEC. PULSE <.5 % DUTY CYCLE APT77N6B_SC6 I C R DS(on), DRAIN-TO-SOURCE ON RESISTANCE BS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) FIGURE 2, Low Voltage Output Characteristics.8 NORMALIZED TO , DRAIN CURRENT FIGURE 4, R DS (ON) vs Current = 38.5A 7.5V = V 7.V 6.5V 6.V 5.5V = 2V 5V, Junction Temperature ( C) FIGURE 6, Breakdown Voltage vs Temperature R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) = 25 C = -55 C , GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics T C, CASE TEMPERATURE (C ) FIGURE 5, Maximum Current vs Case Temperature , JUNCTION TEMPERATURE (C ) FIGURE 7, On-Resistance vs Temperature (TH), THRESHOLD VOLTAGE (NORMALIZED) T C, Case Temperature ( C) 5 FIGURE 8, Threshold Voltage vs Temperature. ms µs ms ms 8 FIGURE 9, Maximum Safe Operating Area 5-72 Rev A 8-2
4 Typical Performance Curves C, CAPACITANCE (pf) 2,, C iss C oss C rss FIGURE, Capacitance vs -To-Source Voltage 35, GATE-TO-SOURCE VOLTAGE (VOLTS) = 77A = 3V = 2V APT77N6B_SC6 = 48V Q g, TOTAL GATE CHARGE (nc) FIGURE, Gate Charges vs Gate-To-Source Voltage R, REVERSE DRAIN CURRENT = +5 C = =25 C and t d(off) (ns) = 4V = 5. Ω L = μh t d(off), and t f (ns) V SD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 2, Source- Diode Forward Voltage 5 V = 4V DD R = 5.Ω G T J L = μh t f SWITCHING ENERGY (μj) FIGURE 3, Delay Times vs Current = 4V = 5. Ω L = μh E ON includes diode reverse recovery. E off FIGURE 4, Rise and Fall Times vs Current FIGURE 5, Switching Energy vs Current 7 = 4V 5-72 Rev A 8-2 SWITCHING ENERGY (uj) I = 77A D T J L = μh E ON includes diode reverse recovery , GATE RESISTANCE (Ohms) FIGURE 6, Switching Energy vs Gate Resistance E off
5 APT77N6B_SC6 % Gate Voltage 9% t d(off) Gate Voltage 9% t f Collector Current Collector Current 5% % 5% Collector Voltage % Collector Voltage Switching Energy Switching Energy Figure 7, Turn-on Switching Waveforms and Definitions Figure 8, Turn-off Switching Waveforms and Definitions APT3DQ6 APT3DF6 I C V CE G D.U.T. Figure Figure 9, 2, Inductive Inductive Switching Test Test Circuit Circuit TO-247 Package Outline e3 % Sn D 3 PAK Package Outline 4.69 (.85) 5.3 (.29).49 (.59) 2.49 (.98).4 (.6).79 (.3) 2.8 (.89) 2.46 (.845) 6.5 (.242) BSC 4.5 (.77) Max. 9.8 (.78) 2.32 (.8). (.4).4 (.55) 2.2 (.87) 2.59 (.2) 5.45 (.25) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 5.49 (.6) 6.26 (.64) 5.38 (.22) 6.2 (.244) 3.5 (.38) 3.8 (.5) 2.87 (.3) 3.2 (.23).65 (.65) 2.3 (.84) Gate Source (Heat Sink) 4.98 (.96) 5.8 (.2).47 (.58).57 (.62).46 (.8).56 (.22) {3 Plcs}.2 (.).78 (.7) 2.67 (.5) 2.84 (.2).22 (.48).32 (.52) 5.95 (.628) 6.5(.632) Revised 4/8/95.27 (.5).4 (.55).98 (.78) 2.8 (.82) 5.45 (.25) BSC {2 Plcs.}.4 (.4).5(.45) 3.79 (.543) 3.99(.55) Source Gate Dimensions in Millimeters (Inches) 3.4 (.528) 3.5(.532) Revised 8/29/ (.5) 4.6 (.6) (Base of Lead) Heat Sink () and Leads are Plated.5 (.453).6 (.457) 5-72 Rev A 8-2
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APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off
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Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
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l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
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More informationOperating Junction and 55 to +175 C Storage Temperature Range
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