Super Junction MOSFET

Size: px
Start display at page:

Download "Super Junction MOSFET"

Transcription

1 APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv / dt Rated Popular TO-247 or Surface Mount D 3 package. G D S MAXIMUM RATINGS All Ratings per die: T C = 25 C unless otherwise specifi ed. Symbol Parameter APT77N6B_SC6 UNIT S -Source Voltage 6 Volts Continuous T C = 25 C 77 Continuous T C = C 49 Amps M Pulsed Current 272 Gate-Source Voltage Continuous ±2 Volts P D Total Power T C = 25 C 48 Watts,T STG Operating and Storage Junction Temperature Range - 55 to 5 T L Lead Temperature:.63" from Case for Sec. 3 C I AR Avalanche Current Amps E AR Repetitive Avalanche Energy 2 ( Id =3.4A, Vdd = 5V ) 2.96 E AS Single Pulse Avalanche Energy ( Id = 3.4A, Vdd = 5V ) 954 mj STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV (DSS) -Source Breakdown Voltage ( = V, = 25μA) 6 Volts R DS(on) -Source On-State Resistance 3 ( = V, = 44.4A).37.4 Ohms Zero Gate Voltage Current ( = S, = V, T C = 25 C) 25 SS Zero Gate Voltage Current ( = S, = V, T C = 5 C) 25 μa I GSS Gate-Source Leakage Current ( = ±2V, = V) ± na (th) Gate Threshold Voltage ( =, = 2.96mA) Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website Rev A 8-2

2 DYNAMIC CHARACTERISTICS APT77N6B_SC6 Symbol Characteristic Test Conditions MIN TYP MAX UNIT C iss Input Capacitance = V 36 C oss Output Capacitance = 25V 44 C rss Reverse Transfer Capacitance f = MHz 29 pf Q g Total Gate Charge 4 V = V 26 GS Q gs Gate-Source Charge = 4V 38 Q = 25 C gd Gate- ("Miller") Charge 44 nc Turn-on Delay Time INDUCTIVE SWITCHING 8 t = V r Rise Time 27 = 38V t d(off) Turn-off Delay Time = 25 C 65 t f Fall Time = 5.Ω 8 2 Turn-on Switching Energy 5 INDUCTIVE 25 C 67 = 4V, = 5V E off Turn-off Switching Energy = 77A, = 5Ω 288 Turn-on Switching Energy 5 INDUCTIVE 25 C 23 E off Turn-off Switching Energy = 4V, = 5V = 77A, = 5Ω 3 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I S Continuous Source Current (Body Diode) 77 I SM Pulsed Source Current (Body Diode) 23 Amps V SD Diode Forward Voltage 3 ( = V, I S = -77A).2 Volts dv / dt Peak Diode Recovery dv 6 / dt 5 V/ns r Q rr I RRM Reverse Recovery Time = A/μs) Reverse Recovery Charge = A/μs) Peak Recovery Current = A/μs) THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R θjc Junction to Case.26 C/W R θja Junction to Ambient 4 Repetitive Rating: Pulse width limited by maximum junction temperature 4 See MIL-STD-75 Method Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery. P AV = E AR *f. Pulse width tp limited by Tj max. 6 Maximum 25 C diode commutation speed = di/dt 6A/μs 3 Pulse Test: Pulse width < 38 μs, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein..3 T j = 25 C 95 ns T j = 25 C 32 μc T j = 25 C 6 Amps ns μj 5-72 Rev A 8-2 Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE Note: Duty Factor D = t /t 2 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration P DM t t 2

3 Typical Performance Curves V V 25 > (ON) x R DS (ON)MAX. 25μSEC. PULSE <.5 % DUTY CYCLE APT77N6B_SC6 I C R DS(on), DRAIN-TO-SOURCE ON RESISTANCE BS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) FIGURE 2, Low Voltage Output Characteristics.8 NORMALIZED TO , DRAIN CURRENT FIGURE 4, R DS (ON) vs Current = 38.5A 7.5V = V 7.V 6.5V 6.V 5.5V = 2V 5V, Junction Temperature ( C) FIGURE 6, Breakdown Voltage vs Temperature R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) = 25 C = -55 C , GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics T C, CASE TEMPERATURE (C ) FIGURE 5, Maximum Current vs Case Temperature , JUNCTION TEMPERATURE (C ) FIGURE 7, On-Resistance vs Temperature (TH), THRESHOLD VOLTAGE (NORMALIZED) T C, Case Temperature ( C) 5 FIGURE 8, Threshold Voltage vs Temperature. ms µs ms ms 8 FIGURE 9, Maximum Safe Operating Area 5-72 Rev A 8-2

4 Typical Performance Curves C, CAPACITANCE (pf) 2,, C iss C oss C rss FIGURE, Capacitance vs -To-Source Voltage 35, GATE-TO-SOURCE VOLTAGE (VOLTS) = 77A = 3V = 2V APT77N6B_SC6 = 48V Q g, TOTAL GATE CHARGE (nc) FIGURE, Gate Charges vs Gate-To-Source Voltage R, REVERSE DRAIN CURRENT = +5 C = =25 C and t d(off) (ns) = 4V = 5. Ω L = μh t d(off), and t f (ns) V SD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 2, Source- Diode Forward Voltage 5 V = 4V DD R = 5.Ω G T J L = μh t f SWITCHING ENERGY (μj) FIGURE 3, Delay Times vs Current = 4V = 5. Ω L = μh E ON includes diode reverse recovery. E off FIGURE 4, Rise and Fall Times vs Current FIGURE 5, Switching Energy vs Current 7 = 4V 5-72 Rev A 8-2 SWITCHING ENERGY (uj) I = 77A D T J L = μh E ON includes diode reverse recovery , GATE RESISTANCE (Ohms) FIGURE 6, Switching Energy vs Gate Resistance E off

5 APT77N6B_SC6 % Gate Voltage 9% t d(off) Gate Voltage 9% t f Collector Current Collector Current 5% % 5% Collector Voltage % Collector Voltage Switching Energy Switching Energy Figure 7, Turn-on Switching Waveforms and Definitions Figure 8, Turn-off Switching Waveforms and Definitions APT3DQ6 APT3DF6 I C V CE G D.U.T. Figure Figure 9, 2, Inductive Inductive Switching Test Test Circuit Circuit TO-247 Package Outline e3 % Sn D 3 PAK Package Outline 4.69 (.85) 5.3 (.29).49 (.59) 2.49 (.98).4 (.6).79 (.3) 2.8 (.89) 2.46 (.845) 6.5 (.242) BSC 4.5 (.77) Max. 9.8 (.78) 2.32 (.8). (.4).4 (.55) 2.2 (.87) 2.59 (.2) 5.45 (.25) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 5.49 (.6) 6.26 (.64) 5.38 (.22) 6.2 (.244) 3.5 (.38) 3.8 (.5) 2.87 (.3) 3.2 (.23).65 (.65) 2.3 (.84) Gate Source (Heat Sink) 4.98 (.96) 5.8 (.2).47 (.58).57 (.62).46 (.8).56 (.22) {3 Plcs}.2 (.).78 (.7) 2.67 (.5) 2.84 (.2).22 (.48).32 (.52) 5.95 (.628) 6.5(.632) Revised 4/8/95.27 (.5).4 (.55).98 (.78) 2.8 (.82) 5.45 (.25) BSC {2 Plcs.}.4 (.4).5(.45) 3.79 (.543) 3.99(.55) Source Gate Dimensions in Millimeters (Inches) 3.4 (.528) 3.5(.532) Revised 8/29/ (.5) 4.6 (.6) (Base of Lead) Heat Sink () and Leads are Plated.5 (.453).6 (.457) 5-72 Rev A 8-2

Super Junction MOSFET

Super Junction MOSFET 65V 94A * *G Denotes RoHS Compliant, Pb Free Terminal Finish. CO LMOS Power Semiconductors Super Junction MOSFET T-Max TM Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche

More information

APT8052BLL APT8052SLL

APT8052BLL APT8052SLL APT82BLL APT82SLL 8V A.2Ω Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly

More information

Super Junction MOSFET

Super Junction MOSFET 6V 6A.45Ω APT6N6BCS* APT6N6SCS* * Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Po wer Se miconductors Super Junction MOSFET (B) TO-247 D 3 PAK Ultra Low R DS(ON) Low Miller Capacitance Ultra

More information

APT1003RBLL APT1003RSLL

APT1003RBLL APT1003RSLL APT3RBLL APT3RSLL V A 3.Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with

More information

MOSFET = 0V, I D = 10V, 29A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = ±30V, V DS = 0V) = 2.5mA)

MOSFET = 0V, I D = 10V, 29A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = ±30V, V DS = 0V) = 2.5mA) V A.65Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by

More information

MOSFET = 0V, I D = 16.5A) = 10V, I D = 200V, V GS = 0V) = 0V, T C = 160V, V GS = 0V) = ±30V, V DS. = 2.5mA)

MOSFET = 0V, I D = 16.5A) = 10V, I D = 200V, V GS = 0V) = 0V, T C = 160V, V GS = 0V) = ±30V, V DS. = 2.5mA) APT82JLL 8V A.2Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by

More information

APT34N80B2C3G APT34N80LC3G

APT34N80B2C3G APT34N80LC3G APT3NB2C3G APT3NLC3G *G Denotes RoHS Compliant, Pb Free Terminal Finish. V 3A.15Ω Super Junction MOSFET T-MAX COOLMOS TO-26 Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate

More information

APT30M30B2FLL APT30M30LFLL

APT30M30B2FLL APT30M30LFLL POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering

More information

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C APT2M11JFLL 2V A.11Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power

More information

MOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA)

MOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA) APT2M11JLL 2V A.11Ω POWER MOS 7 R Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement

More information

APT5010B2FLL APT5010LFLL 500V 46A 0.100

APT5010B2FLL APT5010LFLL 500V 46A 0.100 POWER MOS 7 R FREDFET APT51B2FLL APT51LFLL 5V 46A.1 B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed

More information

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D I DM. Watts P D Linear Derating Factor W/ C T J. Amps E AR E AS UNIT BV DSS = 0V, I D

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D I DM. Watts P D Linear Derating Factor W/ C T J. Amps E AR E AS UNIT BV DSS = 0V, I D APTM35JVFR V A.35Ω POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density

More information

MOSFET = 0V, I D. Volts R DS(on) (V GS = 10V, 17.5A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = 0V) = ±30V, V DS. = 1mA)

MOSFET = 0V, I D. Volts R DS(on) (V GS = 10V, 17.5A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = 0V) = ±30V, V DS. = 1mA) APT14BLL(G) APT14SLL(G) V A.14 *G Denotes RoHS Compliant, Pb Free Terminal Finish. Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and

More information

HCI70R500E 700V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power

More information

Watts P D Linear Derating Factor W/ C T J = 0V, I D. (ON) Max, V GS = 12V, 24.5A) = 600v, V GS = 0V) = 480V, V GS = 0V, T C = ±30V, V DS = 0V)

Watts P D Linear Derating Factor W/ C T J = 0V, I D. (ON) Max, V GS = 12V, 24.5A) = 600v, V GS = 0V) = 480V, V GS = 0V, T C = ±30V, V DS = 0V) APL62B2(G) APL62L(G) 6V A.125Ω LINEAR MOSFET B2 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions

More information

HCA80R250T 800V N-Channel Super Junction MOSFET

HCA80R250T 800V N-Channel Super Junction MOSFET HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

HCD80R1K4E 800V N-Channel Super Junction MOSFET

HCD80R1K4E 800V N-Channel Super Junction MOSFET HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge

More information

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS

More information

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,

More information

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for

More information

HCD80R650E 800V N-Channel Super Junction MOSFET

HCD80R650E 800V N-Channel Super Junction MOSFET HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

HCS80R1K4E 800V N-Channel Super Junction MOSFET

HCS80R1K4E 800V N-Channel Super Junction MOSFET HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,

More information

HCD80R600R 800V N-Channel Super Junction MOSFET

HCD80R600R 800V N-Channel Super Junction MOSFET HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HFP4N65F / HFS4N65F 650V N-Channel MOSFET HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016

More information

HCS80R380R 800V N-Channel Super Junction MOSFET

HCS80R380R 800V N-Channel Super Junction MOSFET HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply

More information

MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω

MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω MDFNG N-channel MOSFET V MDFNG N-Channel MOSFET V, A,.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high

More information

MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω

MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω MDDN5 N-Channel MOSFET 5V, 3.A,.75Ω General Description The MDDN5 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

HCS70R350E 700V N-Channel Super Junction MOSFET

HCS70R350E 700V N-Channel Super Junction MOSFET HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω MDF13N65B N-Channel MOSFET 65V, 14A,.46Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast

More information

T C =25 unless otherwise specified

T C =25 unless otherwise specified 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate

More information

MDS9652E Complementary N-P Channel Trench MOSFET

MDS9652E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,

More information

8N Amps, 600/650 Volts N-CHANNEL POWER MOSFET 8N60 MOSFET N 600V 7.5A 1,2 OHM. Power MOSFET. DESCRIPTION FEATURES

8N Amps, 600/650 Volts N-CHANNEL POWER MOSFET 8N60 MOSFET N 600V 7.5A 1,2 OHM. Power MOSFET.   DESCRIPTION FEATURES MOSFET N 6V 7.5A,2 OHM 8N6 7.5 Amps,6/65 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N6 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching

More information

HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET

HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching

More information

T C =25 unless otherwise specified

T C =25 unless otherwise specified WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances

More information

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω MDP15N6G / MDF15N6G N-Channel MOSFET 6V MDP15N6G / MDF15N6G N-Channel MOSFET 6V, 15A,.4Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides

More information

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω MDHTN0Y N-Channel MOSFET 00V, 0.85A,.35Ω General Description The MDHTN0Y uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested

More information

12N60 12N65 Power MOSFET

12N60 12N65 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 1 TO-220 ITO-220/TO-220F is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time,

More information

APT50GT120B2R(G) APT50GT120LR(G)

APT50GT120B2R(G) APT50GT120LR(G) APT5GT12B2R(G) APT5GT12LR(G) 12V, 5A, (ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

FREDFET FAST RECOVERY BODY DIODE = 0V, I D = 10V, I D = 29A) = 600V, V GS = 0V) = 0V, T C = 480V, V GS = 0V) = ±30V, V DS. = 5mA)

FREDFET FAST RECOVERY BODY DIODE = 0V, I D = 10V, I D = 29A) = 600V, V GS = 0V) = 0V, T C = 480V, V GS = 0V) = ±30V, V DS. = 5mA) APT6M75JFLL 6V A.75Ω POWER MOS 7 R FREFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power

More information

MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω

MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω MDFN5B N-channel MOSFET 5V MDFN5B N-Channel MOSFET 5V,.A,.Ω General Description The MDFN5B MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high

More information

IRF130, IRF131, IRF132, IRF133

IRF130, IRF131, IRF132, IRF133 October 1997 SEMICONDUCTOR IRF13, IRF131, IRF132, IRF133 12A and 14A, 8V and 1V,.16 and.23 Ohm, N-Channel Power MOSFETs Features Description 12A and 14A, 8V and 1V r DS(ON) =.16Ω and.23ω Single Pulse Avalanche

More information

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω MDF11N6 N-channel MOSFET 6V MDF11N6 N-Channel MOSFET 6V, 11A,.55Ω General Description The MDF11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance

More information

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R240S

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R240S SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R240S Rev. 1.1 Aug. 2017 SSP80R240S/SSF80R240S/SSB80R240S 800V N-Channel

More information

Ultra Fast NPT - IGBT

Ultra Fast NPT - IGBT APT4GR2B2D3 2V, 4A, (on) = 2.V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers

More information

GP2M020A050H GP2M020A050F

GP2M020A050H GP2M020A050F Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A

More information

SSF11NS65UF 650V N-Channel MOSFET

SSF11NS65UF 650V N-Channel MOSFET Main Product Characteristics V DSS R DS(on) I D 650V 0.32Ω (typ.) 11A TO-220F Marking and Pin S c h e m a ti c Dia g r a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche

More information

HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET

HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested

More information

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,

More information

HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET

HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe

More information

DFP50N06. N-Channel MOSFET

DFP50N06. N-Channel MOSFET N-Channel MOSFET Features R DS(on) (Max.22 )@ =1V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 1% Avalanche Tested 1.Gate 2.Drain 3.Source BS = 6V R DS(ON) =.22 ohm = 5A General

More information

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

18 N Amps, 500 Volts N-CHANNEL MOSFET. Power MOSFET DESCRIPTION FEATURES SYMBOL

18 N Amps, 500 Volts N-CHANNEL MOSFET. Power MOSFET DESCRIPTION FEATURES SYMBOL Power MOSFET 8 Amps, 500 Volts NCHANNEL MOSFET DESCRIPTION The YR 8N50 are NChannel enhancement mode power field effect transistors (MOSFET) which are produced using YR s proprietary,planar stripe, DMOS

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.

More information

MDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω

MDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDFS11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDFS11N6 is suitable device for SMPS,

More information

GP1M018A020CG GP1M018A020PG

GP1M018A020CG GP1M018A020PG Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A

More information

= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2

= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 G C E TYPICAL PERFORMANCE CURVES 12V APT1GN12B2 APT1GN12B2 APT1GN12B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have

More information

SSF6014D 60V N-Channel MOSFET

SSF6014D 60V N-Channel MOSFET Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche

More information

HCS90R1K5R 900V N-Channel Super Junction MOSFET

HCS90R1K5R 900V N-Channel Super Junction MOSFET HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40

provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40 APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off

More information

HCS80R850R 800V N-Channel Super Junction MOSFET

HCS80R850R 800V N-Channel Super Junction MOSFET HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

GP2M005A050CG GP2M005A050PG

GP2M005A050CG GP2M005A050PG Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance N-channel MOSFET BS R DS(on) 5V.5A < 1.5W D-PAK I-PAK

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,

More information

I2-PAK G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 260 V. Symbol Parameter SLB40N26C/SLI40N26C Units R θjc

I2-PAK G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 260 V. Symbol Parameter SLB40N26C/SLI40N26C Units R θjc SLB40N26C / SLI40N26C 260V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

V DSS R DS(on) max (mw)

V DSS R DS(on) max (mw) Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET

More information

N-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc..

N-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc.. Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current

More information

HFI50N06A / HFW50N06A 60V N-Channel MOSFET

HFI50N06A / HFW50N06A 60V N-Channel MOSFET HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to

More information

DEVICE SPECIFICATION. Symbol Parameter apq10sn40a Units

DEVICE SPECIFICATION. Symbol Parameter apq10sn40a Units 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC s proprietary,

More information

Characteristics Symbol Rating Unit. T C=70 o C 36.6 T A=25 o C 20.4 (3) T A=70 o C 16.3 (3) Pulsed Drain Current I DM 100 A 31.2 T C=70 o C 20.0.

Characteristics Symbol Rating Unit. T C=70 o C 36.6 T A=25 o C 20.4 (3) T A=70 o C 16.3 (3) Pulsed Drain Current I DM 100 A 31.2 T C=70 o C 20.0. General Description The MDD152 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD152 is suitable

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 4 Amps,6 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N6 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate

More information

Characteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6.

Characteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6. General Description The MDU1514 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in) Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

More information

SMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.

SMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

More information

Base Part Number Package Type Standard Pack Orderable Part Number

Base Part Number Package Type Standard Pack Orderable Part Number V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits

More information

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ MDU1516 Single N-Channel Trench MOSFET 3V MDU1516 Single N-channel Trench MOSFET 3V, 7.6A, 9.mΩ General Description Features The MDU1516 uses advanced MagnaChip s MOSFET Technology, which provides high

More information

Description TO-3PN D S. Symbol Parameter FDA18N50 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds

Description TO-3PN D S. Symbol Parameter FDA18N50 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds FDA18N50 N-Channel UniFET TM MOSFET 500 V, 19 A, 265 m Features R DS(on) = 265 m (Max.) @ = 10 V, ID = 9.5 A Low Gate Charge (Typ. 45 nc) Low C rss (Typ. 25 pf) 100% Avalanche Tested Applications PDP TV

More information

Order code V DS R DS(on) max. I D

Order code V DS R DS(on) max. I D Datasheet N-channel 6 V, 165 mω typ., 18 A, MDmesh DM6 Power MOSFET in a TO 22FP package Features Order code V DS R DS(on) max. I D STF26N6DM6 6 V 195 mω 18 A TO-22FP D(2) 1 2 3 Fast-recovery body diode

More information

SMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF

SMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

More information

V DSS R DS(on) max I D 80V GS = 10V 3.6A

V DSS R DS(on) max I D 80V GS = 10V 3.6A HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 80V 73m:@ = 0V 3.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized

More information

2N65 650V N-Channel Power MOSFET

2N65 650V N-Channel Power MOSFET R S E M I C O N D U C T O R FEATURES RDS(ON)< 4. 4Ω @VGS=1V, ID= 1A Fast switching capability Lead free in compliance with EU RoHS directive. Improved dv/ dt capability, high ruggedness MECHANICAL DATA

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l

More information

Base Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF

Base Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power

More information

Operating Junction and 55 to +175 C Storage Temperature Range

Operating Junction and 55 to +175 C Storage Temperature Range Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage

More information

600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G*

600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G* G C E TYPICAL PERFORMANCE CURVES APT7GNB_SDQ(G) V APT7GNBDQ APT7GNSDQ APT7GNBDQG* APT7GNSDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize

More information

AUTOMOTIVE MOSFET. I D = 140A Fast Switching

AUTOMOTIVE MOSFET. I D = 140A Fast Switching IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits

More information

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.

More information