SSFT04N15. Main Product Characteristics V DSS 150V. 130mΩ (typ.) I D. Features and Benefits. Description

Transcription

1 Main Product Characteristics V DSS 15V R DS (on) I D 13mΩ (typ.) 4A T4N15 G D S Features and Benefits Advanced MOSFET process technology Ideal for PWM, load switching and general purpose applications Low onresistance with low gate charge Fast switching and reverse body recovery SOT223 Marking and Pin Assignment Schematic Diagram Description The utilizes the latest techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable for use in PWM, load switching and a wide variety of other applications. Absolute Maximum Ratings (T A unless otherwise specified) Parameter Symbol Value Unit DrainSource Voltage V DS 15 GateSource Voltage ±2 Continuous Drain Current I D 4 Drain Current (note1) I DM 16 V A Thermal Resistance from Junction to Ambient R θja 125 C/W Junction Temperature T J 15 Storage Temperature Range T STG 55 to +15 Maximum Lead Temperure for Soldering Purposes (1/8 from case for 5 seconds) T L 26 C 1/7

2 Electrical Characteristics (T A unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics DrainSource Breakdown Voltage V(BR)DSS VGS = V, ID =25µA 15 DrainSource Diode Forward Voltage VSD = V, IS =2.A 1.2 V Zero Gate Voltage Drain Current I DSS V DS =15V, VGS =V 1 µa GateBody Leakage Current I GSS VDS =V, VGS =±2V ±1 na On Characteristics GateThreshold Voltage VGS(th) VDS =, ID =25µA V Static DrainSource OnResistance RDS(on) VGS =1V, ID =4.A mω Forward Transconductance gfs VDS =15V, ID =4A 5 S Dynamic Characteristics Input Capacitance C iss 9 Output Capacitance C oss VDS =25V,VGS =V,f =1MHz 115 pf Reverse Transfer Capacitance C rss 7 Switching Characteristics Total Gate Charge Q g 19 GateSource Charge Q gs VDS =75V,VGS =1V,ID =1.5A 5.5 GateDrain Charge Q gd 7 Turnon Delay Time td(on) 8 Turnon Rise Time tr V DS =75V, =1V, 1 Turnoff Delay time td(off) R G =6Ω, ID =1.A,RL=75Ω 2 Turnoff Fall Time tf 15 nc ns Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2/7

3 Test Circuits and Waveforms EAS Test Circuit Gate charge test circuit Switching Time Test Circuit Switching Waveforms 3/7

4 Typical Electrical and Thermal Characteristics 2 Output Characteristics =4V,5V,6V 2 V DS =1V Transfer C haracteristics 16 =3.5V 16 DRAIN CURRENT I D 12 8 =3.2V DRAIN CURRENT I D 12 8 =1 C 4 =3V DRAIN TO SOURCE VOLTAGE V DS (V) GATE TO SOURCE VOLTAGE (V) R DS(ON) I D R DS(ON) I D =4A ONRESISTANCE R DS(ON) (m ) =1V ONRESISTANCE R DS(ON) (m ) =1 C DRAIN CURRENT I D GATE TO SOURCE VOLTAGE ( V) 4/7

5 Typical Electrical and Thermal Characteristics I S V SD Threshold Voltage 5 3. SOURCE CURRENT I S =1 C THRESHOLD VOLTAGE V TH (V) I D =25uA 1E SOURCE TO DRAIN VOLTAGE V SD ( V) JUNCTION TEMPERATURE T j ( C ) 5/7

6 Mechanical Data SOT223 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A A b b c D E E e 2.3(BSC).91(BSC) L.75.3 θ 1 1 Suggested Pad Layout 6/7

7 Ordering and Marking Information Device Marking: T4N15 Package (Available) SOT223 Operating Temperature Range C : 55 to 15 C Devices per Unit Package Type Units/ Reel Reels/Inner Units/Inner Inner es/carton SOT Units/Carton 7/7 Doc.USxC1.