SE2305. SOT-23 Plastic-Encapsulate MOSFETS WILLAS ELECTRONIC CORP. P-Channel 8-V(D-S) MOSFET. FEATURE TrenchFET Power MOSFET SOT-23
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1 P-Channel 8-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET SOT-23 APPLICATIONS Load Switch for Portable Devices DC/DC Converter 1. GATE 2. SOURCE 3. DRAIN MARKING: S5 Maximum ratings ( unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS -8 Gate-Source Voltage ±8 V Continuous Drain Current I D -4.1 Continuous Source-Drain Diode Current I S -0.8 A Maximum Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient(t 10s) R θja 357 /W Junction Temperature T J 150 Storage Temperature T STG -50 ~+150
2 Electrical characteristics ( unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -8 Gate-source threshold voltage VGS(th) VDS =, ID =-250µA V Gate-source leakage I GSS VDS =0V, VGS =±8V ±100 na Zero gate voltage drain current I DSS VDS =-8V, VGS =0V -1 µa VGS =-4.5V, ID =-3.5A Drain-source on-state resistance a RDS(on) VGS =-2.5V, ID =-3A Ω VGS =-1.8V,ID=-2.0A Forward transconductance a gfs VDS =-5V, ID =-4.1A 6 S Dynamic Input capacitance b,c C iss 740 Output capacitance b,c C oss VDS =-4V,VGS =0V,f =1MHz 290 pf Reverse transfer capacitance b,c C rss 190 VDS =-4V,VGS =-4.5V, Total gate charge b Q g ID =-4.1A Gate-source charge b Q gs nc VDS =-4V,VGS =-2.5V, 1.2 ID =-4.1A Gate-drain charge b 1.6 Q gd Gate resistance b,c R g f =1MHz Ω Turn-on delay time b,c td(on) Rise time b,c tr V DD =-4V, R L =1.2Ω, ID -3.3A, Turn-off Delay time b,c td(off) V GEN =-4.5V,Rg=1Ω Fall time b,c tf Turn-on delay time b,c td(on) 5 10 ns Rise time b,c tr R L =1.2Ω, ID -3.3A, V DD =-4V, Turn-off delay time b,c td(off) V GEN =-8V,Rg=1Ω Fall time b,c tf Drain-source body diode characteristics Continuous source-drain diode current I S T C -1.4 Pulse diode forward current a I SM -10 A Body ciode voltage V SD I F =-3.3A V Note : a. Pulse Test ; Pulse Width 300µs, Duty Cycle 2%. b. Guaranteed by design, not subject to production testing. c. These parameters have no way to verify.
3 SOT-23 Plastic-Encapsulate MOSFETS Typical Characteristics Output Characteristics -16 =-4.5V,-4.0V,-3.5V,-3.0V,-2.5V =-2.0V =-1.5V Transfer Characteristics DRAIN TO SOURCE VOLTAGE V DS GATE TO SOURCE VOLTAGE 300 R DS(ON) I D R DS(ON) 500 ON-RESISTANCE R DS(ON) (mω) =-1.8V =-2.5V ON-RESISTANCE R DS(ON) (mω) I D =-3.3A =-4.5V GATE TO SOURCE VOLTAGE I S V SD SOURCE CURRENT I S SOURCE TO DRAIN VOLTAGE V SD
4 Outline Drawing SOT (1.60).047(1.20).122(3.10).106(2.70).110(2.80).083(2.10).006(0.15)MIN..080(2.04).070(1.78).008(0.20).003(0.08).004(0.10)MAX..020(0.50).012(0.30).055(1.40).035(0.89) Dimensions in inches and (millimeters) Rev.D
5 Ordering Information: Device PN Packing T (1) G (2) WS Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix G ;Halogen free product for packing code suffix H ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life saving implant or other applications intended for life sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures.
3000/Tape&Reel. 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range
DS = 30 R DS(ON), gs @10, I ds @8.5A = 38mΩ R DS(ON), gs @4.5, I ds @5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling
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