Small Signal MOSFET 115 ma, 60 V

Transcription

1 NChannel SOT323 We declare that the material of product compliance with RoHS requirements. ESD Protected:1000V SOT 323 MAXIMUM RATINGS Rating Symbol Value Unit Simplified Schematic DrainSource Voltage V DSS 60 Vdc DrainGate Voltage (R GS = 1.0 MΩ) V DGR 60 Vdc Drain Current Continuous T C = 25 C (Note 1.) Continuous T C = 100 C (Note 1.) Pulsed (Note 2.) I D I D I DM ±115 ±75 ±800 madc Gate 1 3 Drain GateSource Voltage Continuous Nonrepetitive (tp 50 µs) V GS V GSM ±20 ±40 Vdc Vpk Source 2 (Top View) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board (Note 3.) T A = 25 C Derate above 25 C P D mw mw/ C Thermal Resistance, Junction to Ambient R θja 556 C/W Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25 C Derate above 25 C P D mw mw/ C Thermal Resistance, Junction to Ambient R θja 417 C/W Junction and Storage Temperature T J, T stg -55 to C The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. 3. FR5 = 1.0 x 0.75 x in. 4. Alumina = 0.4 x 0.3 x in 99.5% alumina. MARKING DIAGRAM & PIN ASSIGNMENT 1 6C W 3 6C W 2 = Device Code =Month Code ORDERING INFORMATION Device Marking Shipping 6C 3000 Tape & Reel

2 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS DrainSource Breakdown Voltage (V GS = 0, I D = 10 µadc) Characteristic Symbol Min Typ Max Unit V (BR)DSS 60 Vdc Zero Gate Voltage Drain Current T J = 25 C (V GS = 0, V DS = 60 Vdc) T J = 125 C I DSS µadc GateBody Leakage Current, Forward (V GS = 20 Vdc) I GSSF 1 µ Adc GateBody Leakage Current, Reverse (V GS = 20 Vdc) I GSSR -1 µ Adc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (V DS = V GS,I D = 250 µadc) OnState Drain Current (V DS 2.0 V DS(on),V GS = 10 Vdc) Static DrainSource OnState Voltage (V GS = 10 Vdc, I D = 500 madc) (V GS = 5.0 Vdc, I D = 50 madc) Static DrainSource OnState Resistance (V GS = 10 V, I D = 500 madc) T C = 25 C T C = 125 C (V GS = 5.0 Vdc, I D = 50 madc) T C = 25 C T C = 125 C Forward Transconductance (V DS 2.0 V DS(on),I D = 200 madc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance V GS(th) Vdc I D(on) 500 ma V DS(on) r DS(on) Vdc Ohms g FS 80 mmhos C iss pf C oss pf C rss pf SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time (V DD = 25 Vdc, I D 500 madc, t d(on) 7 20 ns TurnOff Delay Time R G = 25 Ω, R L = 50 Ω, V gen = 10 V) t d(off) ns BODYDRAIN DIODE RATINGS Diode Forward OnVoltage (I S = 11.5 madc, V GS = 0 V) V SD 1.5 Vdc Source Current Continuous (Body Diode) I S 115 madc Source Current Pulsed I SM 800 madc 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.

3 TYPICAL ELECTRICAL CHARACTERISTICS Figure 1. Ohmic Region Figure 2. Transfer Characteristics Figure 3. Temperature versus Static DrainSource OnResistance Figure 4. Temperature versus Gate Threshold Voltage

4 SOT (1.35).045(1.15).087(2.20).070(1.80).004(0.10)MIN..096(2.45).078(2.00).056(1.40).047(1.20).010(0.25).003(0.08).004(0.10)MAX..016(0.40).008(0.20).043(1.10).032(0.80) Dimensions in inches and (millimeters) SOLDERING FOOTPRINT* SCALE 10:1 mm inches

5 Ordering Information: Device PN Packing G (1) WS Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix G ;Halogen free product for packing code suffix H ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life saving implant or other applications intended for life sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures.