BSS8402DW S-BSS8402DW. N-Channel/P-Channel SC-88 S 1 D 2 G 1

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1 N-Channel/P-Channel SC-88 BSS8402DW S-BSS8402DW We declare that the material of product are Halogen Free and compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS 50 Vdc GatetoSource Voltage Continuous V GS ± 20 Vdc Drain Current T A = 25C Pulsed Drain Current (t p 10 µs) I D 130 I DM 520 Total Power T A = 25C P D 380 mw Operating and Storage Temperature Range T J, T stg 55 to 150 Thermal Resistance JunctiontoAmbient R θja 328 C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds ma C T L 260 C D 2 G 1 S 1 S 2 G 2 D ORDERING INFORMATION Device Marking Shipping BSS8402DW S-BSS8402DW 402 = Made in China KNP = Made in Taiwan 3000 Tape & Reel Rev.A 1/6

2 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (V GS = 0 Vdc, I D = 250 µadc) V (BR)DSS 50 Vdc Zero Gate Voltage Drain Current (V DS = 25 Vdc, V GS = 0 Vdc) (V DS = 50 Vdc, V GS = 0 Vdc) I DSS GateSource Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc) I GSS ±0.1 µadc µadc ON CHARACTERISTICS (Note 1.) GateSource Threshold Voltage (V DS = V GS, I D = 1.0 madc) V GS(th) Vdc Static DraintoSource OnResistance (V GS = 2.75 Vdc, I D < 200 madc, T A = 40C to +85C) (V GS = 5.0 Vdc, I D = 200 madc) r DS(on) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (V DS = 25 Vdc, V GS = 0, f = 1 MHz) C iss 42 pf Output Capacitance (V DS = 25 Vdc, V GS = 0, f = 1 MHz) C oss 15 Transfer Capacitance (V DG = 25 Vdc, V GS = 0, f = 1 MHz) C rss 3 SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time TurnOff Delay Time (V DD = 30 Vdc, I D = 0.2 Adc,) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. t d(on) 5 ns t d(off) 7 Rev.A 2/6

3 P-Channel ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 µadc) V(BR)DSS 50 Vdc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS ±100 nadc IDSS µadc ON CHARACTERISTICS (Note 1.) GateSource Threaded Voltage (VDS = VGS, ID = 250 µ Adc) Static DraintoSource OnResistance (VGS = 5.0 Vdc, ID = 100 madc) VGS(th) Vdc rds(on) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss 30 pf Output Capacitance (VDS = 5.0 Vdc) Coss 10 Transfer Capacitance (VDG = 5.0 Vdc) Crss 5.0 SWITCHING CHARACTERISTICS (Note 2.) TurnOn Delay Time td(on) 13 ns Rise Time (VDD = 15 ID = 2.5 tr 6 Vdc, D Adc, TurnOff Delay Time RL = 50 Ω) td(off) 16 Fall Time tf 3 Gate Charge QT 6000 pc 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. Rev.A 3/6

4 N-Channel TYPICAL ELECTRICAL CHARACTERISTICS ID,DRAIN CURRENT(AMPS) ID,DRAIN CURRENT(AMPS) VDS,DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. OnRegion Characteristics VGS,GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics T J, JUNCTION TEMPERATURE( Figure 3. OnResistance Variation with Temperature T J, JUNCTION TEMPERATURE( Figure 4. Threshold Voltage Variation with Temperature Q T, TOTAL GATE CHARGE(pC) Figure 5. Gate Charge Rev.A 4/6

5 P-Channel TYPICAL ELECTRICAL CHARACTERISTICS ID,DRIN CURRENT(AMPS) ID,DRIN CURRENT(AMPS) VGS,GATE-TO-SOURCE VOLTAGE (VOLTS) VDS,DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. OnRegion Characteristics DRAIN-TO-SOURCE RESISTANCE(OHMS) R, DS(on) ID,DRAIN CURRENT (AMPS) Figure 3. OnResistance versus Drain Current DRAIN-TO-SOURCE RESISTANCE(OHMS) R, DS(on) ID,DRAIN CURRENT (AMPS) Figure 4. OnResistance versus Drain Current RDS(ON),DRAIN-TO-SOURCE RESISTANCE VGS,GATE-TO-SOURCE VOLTAGE (VOLTS) T, J JUNCTION TEMPERATURE( Q T, TOTAL GATE CHARGE(pC) Figure 5. OnResistance Variation with Temperature Figure 6. Gate Charge Rev.A 5/6

6 A G SC 88 (SOT 363) CASE 419B 02 ISSUE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH B 01 OBSOLETE, NEW STANDARD 419B 02. S B D 6 PL C 0.2 (0.008) M B M N J INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G BSC 0.65 BSC H J K N REF 0.20 REF S STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 H K SOLDERING FOOTPRINT* SCALE 20:1 mm inches Rev.A 6/6