LBSS8402DW1T1G S-LBSS8402DW1T1G POWER MOSFET

Transcription

1 LBSS842DWTG S-LBSS842DWTG. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q qualified and PPAP capable. SC88(SOT-363) 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 2 LBSS842DWTG 42 3/Tape&Reel D 2 G S LBSS842DWT3G 42 /Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Drain Source Voltage VDSS 5 V Gate to Source Voltage Continuous VGS ±2 V Drain Current ma Continuous (Ta = 25 C) ID 3 Pulsed Drain Current (tp µs) IDM 52 Total Power TA = 25 C PD 38 mw Thermal Resistance, Junction to Ambient Junction and Storage temperature range RΘJA TJ,Tstg /W Maximum Lead Temperature for Soldering Purposes, for seconds TL 26 S 2 G 2 D Leshan Radio Company, LTD. Rev.C Jun 28 /8

2 LBSS842DWTG, S-LBSS842DWTG 4. ELECTRICAL CHARACTERISTICS (Ta= 25ºC ) N-Channel OFF CHARACTERISTICS Characteristic Symbol Min. Typ. Max. Unit Drain Source Breakdown Voltage V VBRDSS (VGS =, ID = 25μA) Zero Gate Voltage Drain Current μa (VDS = 25 V, VGS = V) IDSS - -. (VDS = 5 V, VGS = V) Gate Source Leakage Current (VGS = ± 2 V, VDS = V) ON CHARACTERISTICS (Note ) Gate Source Threshold Voltage (VDS = VGS, ID =. ma) Static Drain Source On State Resistance (VGS= 2.75 V, ID < 2 ma, TA = 4 C to +85 C (VGS = 5. V, ID = 2 ma) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS =, f = MHz) Output Capacitance (VDS = 25 V, VGS =, f = MHz) Transfer Capacitance (VDS = 25 V, VGS =, f = MHz) SWITCHING CHARACTERISTICS(Note 2) IGSS VGS(th) RDS(on) Turn-On Delay Time td(on) ns (VDD = 3 V, ID =.2A) Turn-Off Delay Time td(off) Ciss Coss Crss ± μa V Ohm Leshan Radio Company, LTD. Rev.C Jun 28 2/8

3 LBSS842DWTG, S-LBSS842DWTG 4 ELECTRICAL CHARACTERISTICS (Ta= 25ºC )(Con.) P-Channel OFF CHARACTERISTICS Characteristic Symbol Min. Typ. Max. Unit Drain Source Breakdown Voltage V VBRDSS (VGS =, ID = -25μA) Zero Gate Voltage Drain Current μa (VDS = -25 V, VGS = V) (VDS = -5 V, VGS = V) (VDS = -5 V, VGS = V, TJ = 25 C) Gate Source Leakage Current (VGS = ± 2 V, VDS = V) ON CHARACTERISTICS (Note ) Gate Source Threshold Voltage (VDS = VGS, ID = -25 µa) Static Drain Source On State Resistance (VGS = -5. V, ID = - ma) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = -5 V) Output Capacitance (VDS = -5 V) Transfer Capacitance (VDS = -5 V) SWITCHING CHARACTERISTICS(Note 2) Turn On Delay Time Rise Time (VDD = 5 V, ID = 2.5 tr Turn Off Delay Time A,RL = 5 Ω) td(off) Fall Time tf Gate Charge.Pulse Test: Pulse Width 3 μs, Duty Cycle 2.%. IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss 2. Switching characteristics are independent of operating junction temperature ± td(on) - 3 QT pc - μa V Ohm ns Leshan Radio Company, LTD. Rev.C Jun 28 3/8

4 LBSS842DWTG, S-LBSS842DWTG 5.ELECTRICAL CHARACTERISTICS CURVES N-Channel.8.7 VGS=2.5V,3V,3.5V.6.5 VDS=V VGS=2V VGS=.8V VGS=.6V VGS=.4V VDS,Drain to Soure Voltage(V) ID vs. VDS VGS,Gate to Source Voltage(V) ID vs. VGS.8.7 IS,Diode Current(A) RDS(on) On Resistance(Ω) VGS=4.5V VGS=.V VSD,Diode Forward Voltage(V) IS vs. VSD RDS(on) vs. ID Leshan Radio Company, LTD. Rev.C Jun 28 4/8

5 LBSS842DWTG, S-LBSS842DWTG 4 5.ELECTRICAL CHARACTERISTICS CURVES(Con.) N-Channel ID=25uA RDS(on),On Resistane (Ω) VGS=V ID=.8A VGS=4.5V ID=.5A VGSTH,Threshold Voltage(V) Tj,Temperature( ) RDS(on) vs. Tj Tj,Temperature( ) VGSTH vs. Tj 7 6 f=mhz C-Capacitance() Ciss Coss Crss VDS,Drain to Source Voltage(V) Capacitance Leshan Radio Company, LTD. Rev.C Jun 28 5/8

6 LBSS842DWTG, S-LBSS842DWTG 5.ELECTRICAL CHARACTERISTICS CURVES(Con.) P-Channel.6 VGS=3V,3.25V,3.5 V.6 VDS=V.5.5 VGS=2.75V VGS=2.5V VGS=2.25V VGS=2V VDS,Drain to Soure Voltage(V) ID vs. VDS VGS,Gate to Source Voltage(V) ID vs. VGS IS,Diode Forward Current(A) RDS(on),On Resistane (Ω) VGS=4.5V VGS=.V VSD,Diode Forward Voltage(V) IS vs. VSD RDS(on) vs. ID Leshan Radio Company, LTD. Rev.C Jun 28 6/8

7 LBSS842DWTG, S-LBSS842DWTG 5.ELECTRICAL CHARACTERISTICS CURVES(Con.) P-Channel ID=25uA RDS(on),On Resistance ( ) VGS=4.5V,ID=.3A VGS=V,ID=.52A VGSTH,Threshod Voltage(V) Tj,Temperature( ) RDS(on) vs. Tj Tj,Temperature( ) VGSTH vs. Tj 6 5 f=mhz C-Capacitance() Ciss Coss Crss VDS,Drain to Source Voltage(V) Capacitance Leshan Radio Company, LTD. Rev.C Jun 28 7/8

8 LBSS842DWTG, S-LBSS842DWTG 6.OUTLINE AND DIMENSIONS Notes:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A A b C D E E e.65 BSC.26 BSC L L2.5 BSC.6 BSC aaa.5. bbb.3. ccc.. ddd.. 7.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.C Jun 28 8/8