Complementary MOSFET

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1 General Description ELM66EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. Maximum Absolute Ratings ELM66EA-S N-channel P-channel Vds=V Vds=-V Id=3.A(Vgs=.V) Id=-.A(Vgs=-.V) Rds(on) < 6mΩ(Vgs=.V) Rds(on) < mω(vgs=-.v) Rds(on) < 7mΩ(Vgs=.V) Rds(on) < mω(vgs=-.v) Rds(on) < mω(vgs=.8v) Rds(on) < mω(vgs=-.8v) Ta= C. Unless otherwise noted. Parameter Symbol N-ch (Max.) P-ch (Max.) Unit Note Drain-source voltage Vds - V Gate-source voltage Vgs ±8 ±8 V Continuous drain current Ta= C Id Ta=7 C.7 -. A Pulsed drain current Idm - A Power dissipation Complementary MOSFET Features Tc= C.. Pd Tc=7 C Junction and storage temperature range Tj,Tstg - to - to C W Thermal Characteristics Parameter Symbol Device Typ. Max. Unit Note Maximum junction-to-ambient t s 78 C/W Rθja Maximum junction-to-ambient Steady-state N-ch 6 C/W Maximum junction-to-lead Steady-state Rθjl 6 8 C/W 3 Maximum junction-to-ambient t s 78 C/W Rθja Maximum junction-to-ambient Steady-state P-ch 6 C/W Maximum junction-to-lead Steady-state Rθjl 6 8 C/W 3 Pin configuration Circuit SOT-6(TOP VIEW) 6 3 Pin No. Pin name GATE SOURCE 3 GATE DRAIN SOURCE 6 DRAIN G N-ch D S G P-ch D S Rev.. 7 -

2 ELM66EA-S Electrical Characteristics (N-ch) Ta= C. Unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=μA, Vgs=V V Zero gate voltage drain current Idss Vds=6V, Vgs=V Ta= C μa Gate-body leakage current Igss Vds=V, Vgs=±8V na Gate threshold voltage Vgs(th) Vds=Vgs, Id=μA..6. V On state drain current Id(on) Vgs=.V, Vds=V A 6 6 Vgs=.V, Id=3.A Ta= C 63 8 Static drain-source on-resistance Rds(on) mω Vgs=.V, Id=3A 7 7 Vgs=.8V, Id=A 7 Forward transconductance Gfs Vds=V, Id=3.A S Diode forward voltage Vsd Is=A, Vgs=V.76. V Max.body-diode continuous current Is A DYNAMIC PARAMETERS Input capacitance Ciss 36 7 pf Output capacitance Coss Vgs=V, Vds=V, f=mhz 66 pf Reverse transfer capacitance Crss pf Gate resistance Rg Vgs=V, Vds=V, f=mhz 3 Ω SWITCHING PARAMETERS Total gate charge Qg nc Gate-source charge Qgs Vgs=.V, Vds=V, Id=3.A.6 nc Gate-drain charge Qgd. nc Turn-on delay time td(on). ns Turn-on rise time tr Vgs=V, Vds=V 6.3 ns Turn-off delay time td(off) RL=3Ω, Rgen=3Ω. ns Turn-off fall time tf.7 ns Body-diode reverse recovery time trr If=3.A, dif/dt=a/μs.3 6. ns Body-diode reverse recovery charge Qrr If=3.A, dif/dt=a/μs 3. nc NOTE :. The value of Rθja is measured with the device mounted on in² FR- board of oz. Copper, in still air environment with Ta= C. The value in any given applications depends on the user s specific board design, The current rating is based on the t s themal resistance rating.. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.. The static characteristics in Figures to 6 are obtained using 8μs pulses, duty cycle.%max.. These tests are performed with the device mounted on in² FR- board with oz. Copper, in a still air environment with Ta= C. The SOA curve provides a single pulse rating. 7 - Rev..

3 ELM66EA-S Typical Electrical and Thermal Characteristics (N-ch) 6 8V.V V 8 Vds=V Id (A) 8 3V.V Id (A) 6 Vgs=.V C C 3 Vds (Volts) Fig : On-Region Characteristics... Vgs (Volts) Figure : Transfer Characteristics Vgs=.8V Vgs=.V Vgs=.V Normalized On-Resistance.6.. Id=3.A Vgs=.8V Vgs=.V Vgs=.V 8 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature ( C) Figure : On-Resistance vs. Junction Temperature E C Id=3.A C Is (A) E+ E- E- E-3 E- C C 6 8 Vgs (Volts) Figure : On-Resistance vs. Gate-Source Voltage E Vsd (Volts) Figure 6: Body-Diode Characteristics 7-3 Rev..

4 ELM66EA-S 8 Vgs (Volts) 3 Vds=V Id=3.A Capacitance (pf) 6 C oss C iss C rss 6 8 Q g (nc) Figure 7: Gate-Charge Characteristics Vds (Volts) Figure 8: Capacitance Characteristics Id (Amps).... Tj(max.)= C Ta= C Rds(on) limited s s.s DC ms s ms s. Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note ) Power (W) Tj(max.)= C Ta= C... Figure : Single Pulse Power Rating Junction-to- Ambient (Note ) Z ja Normalized Transient Thermal Resistance. D=T on /T T j,pk =T a +P dm.z ja.r ja R ja = C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse Pd T on T Figure : Normalized Maximum Transient Thermal Impedance 7 - Rev..

5 Electrical Characteristics (P-ch) STATIC PARAMETERS ELM66EA-S Ta= C. Unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Drain-source breakdown voltage BVdss Id=-μA, Vgs=V - V Zero gate voltage drain current Idss Vds=-6V, Vgs=V - Ta= C - Gate-body leakage current Igss Vds=V, Vgs=±8V ± na Gate threshold voltage Vgs(th) Vds=Vgs, Id=-μA V On state drain current Id(on) Vgs=-.V, Vds=-V - A Static drain-source on-resistance Vgs=-.V 86 Id=-.A Ta= C 6 Rds(on) Vgs=-.V, Id=-A 3 Vgs=-.8V, Id=-A Forward transconductance Gfs Vds=-V, Id=-3A 6 S Diode forward voltage Vsd Is=-A, Vgs=V V Max. body-diode continuous current Is - A DYNAMIC PARAMETERS Input capacitance Complementary MOSFET Ciss Output capacitance Coss Vgs=V, Vds=-V, f=mhz 7 pf μa mω 7 pf Reverse transfer capacitance Crss 9 pf Gate resistance Rg Vgs=V, Vds=V, f=mhz..6 Ω SWITCHING PARAMETERS Total gate charge Qg nc Vgs=-.V, Vds=-V Gate-source charge Qgs.6 nc Id=-.A Gate-drain charge Qgd.6 nc Turn-on delay time td(on) ns Turn-on rise time tr Vgs=-.V, Vds=-V ns Turn-off delay time td(off) RL=3.9Ω, Rgen=3Ω ns Turn-off fall time tf ns Body diode reverse recovery time trr If=-.A, dif/dt=a/μs. 8. ns Body diode reverse recovery charge Qrr If=-.A, dif/dt=a/μs 7. nc NOTE :. The value of Rθja is measured with the device mounted on in² FR- board of oz. Copper, in still air environment with Ta= C. The value in any given applications depends on the user s specific board design, The current rating is based on the t s themal resistance rating.. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.. The static characteristics in Figures to 6 are obtained using 8μs pulses, duty cycle.%max.. These tests are performed with the device mounted on in² FR- board with oz. Copper, in a still air environment with Ta= C. The SOA curve provides a single pulse rating. 7 - Rev..

6 ELM66EA-S Typical Electrical and Thermal Characteristics (P-ch) -.V -3.V -.V 6 Vds=-V -8V -Id (A) -.V -Id (A) Vgs=-.V C C 3 -Vds (Volts) Fig : On-Region Characteristics.. -Vgs (Volts) Figure : Transfer Characteristics.8 Vgs=-.8V Vgs=-.V Vgs=-.V Normalized On-Resistance.6.. Id=-.A Vgs=-.8V Vgs=-.V Vgs=-.V 6 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature ( C) Figure : On-Resistance vs. Junction Temperature E+ E+ C Id=-.A C -Is (A) E- E- E-3 E- C C E Vgs (Volts) Figure : On-Resistance vs. Gate-Source Voltage E Vsd (Volts) Figure 6: Body-Diode Characteristics 7-6 Rev..

7 ELM66EA-S 8 -Vgs (Volts) 3 Vds=-V Id=-.A Capacitance (pf) 6 C rss C iss C oss 6 8 -Q g (nc) Figure 7: Gate-Charge Characteristics -Vds (Volts) Figure 8: Capacitance Characteristics -Id (Amps).... Tj(max.)= C Ta= C Rds(on) limited s s.s DC ms ms s s. -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note ) Power (W) Tj(max.)= C Ta= C... Figure : Single Pulse Power Rating Junction-to- Ambient (Note ) Z ja Normalized Transient Thermal Resistance. D=T on /T T j,pk =T a +P dm.z ja.r ja R ja = C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse Pd T on T Figure : Normalized Maximum Transient Thermal Impedance 7-7 Rev..

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