Complementary MOSFET
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1 General Description ELM66EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. Maximum Absolute Ratings ELM66EA-S N-channel P-channel Vds=V Vds=-V Id=3.A(Vgs=.V) Id=-.A(Vgs=-.V) Rds(on) < 6mΩ(Vgs=.V) Rds(on) < mω(vgs=-.v) Rds(on) < 7mΩ(Vgs=.V) Rds(on) < mω(vgs=-.v) Rds(on) < mω(vgs=.8v) Rds(on) < mω(vgs=-.8v) Ta= C. Unless otherwise noted. Parameter Symbol N-ch (Max.) P-ch (Max.) Unit Note Drain-source voltage Vds - V Gate-source voltage Vgs ±8 ±8 V Continuous drain current Ta= C Id Ta=7 C.7 -. A Pulsed drain current Idm - A Power dissipation Complementary MOSFET Features Tc= C.. Pd Tc=7 C Junction and storage temperature range Tj,Tstg - to - to C W Thermal Characteristics Parameter Symbol Device Typ. Max. Unit Note Maximum junction-to-ambient t s 78 C/W Rθja Maximum junction-to-ambient Steady-state N-ch 6 C/W Maximum junction-to-lead Steady-state Rθjl 6 8 C/W 3 Maximum junction-to-ambient t s 78 C/W Rθja Maximum junction-to-ambient Steady-state P-ch 6 C/W Maximum junction-to-lead Steady-state Rθjl 6 8 C/W 3 Pin configuration Circuit SOT-6(TOP VIEW) 6 3 Pin No. Pin name GATE SOURCE 3 GATE DRAIN SOURCE 6 DRAIN G N-ch D S G P-ch D S Rev.. 7 -
2 ELM66EA-S Electrical Characteristics (N-ch) Ta= C. Unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=μA, Vgs=V V Zero gate voltage drain current Idss Vds=6V, Vgs=V Ta= C μa Gate-body leakage current Igss Vds=V, Vgs=±8V na Gate threshold voltage Vgs(th) Vds=Vgs, Id=μA..6. V On state drain current Id(on) Vgs=.V, Vds=V A 6 6 Vgs=.V, Id=3.A Ta= C 63 8 Static drain-source on-resistance Rds(on) mω Vgs=.V, Id=3A 7 7 Vgs=.8V, Id=A 7 Forward transconductance Gfs Vds=V, Id=3.A S Diode forward voltage Vsd Is=A, Vgs=V.76. V Max.body-diode continuous current Is A DYNAMIC PARAMETERS Input capacitance Ciss 36 7 pf Output capacitance Coss Vgs=V, Vds=V, f=mhz 66 pf Reverse transfer capacitance Crss pf Gate resistance Rg Vgs=V, Vds=V, f=mhz 3 Ω SWITCHING PARAMETERS Total gate charge Qg nc Gate-source charge Qgs Vgs=.V, Vds=V, Id=3.A.6 nc Gate-drain charge Qgd. nc Turn-on delay time td(on). ns Turn-on rise time tr Vgs=V, Vds=V 6.3 ns Turn-off delay time td(off) RL=3Ω, Rgen=3Ω. ns Turn-off fall time tf.7 ns Body-diode reverse recovery time trr If=3.A, dif/dt=a/μs.3 6. ns Body-diode reverse recovery charge Qrr If=3.A, dif/dt=a/μs 3. nc NOTE :. The value of Rθja is measured with the device mounted on in² FR- board of oz. Copper, in still air environment with Ta= C. The value in any given applications depends on the user s specific board design, The current rating is based on the t s themal resistance rating.. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.. The static characteristics in Figures to 6 are obtained using 8μs pulses, duty cycle.%max.. These tests are performed with the device mounted on in² FR- board with oz. Copper, in a still air environment with Ta= C. The SOA curve provides a single pulse rating. 7 - Rev..
3 ELM66EA-S Typical Electrical and Thermal Characteristics (N-ch) 6 8V.V V 8 Vds=V Id (A) 8 3V.V Id (A) 6 Vgs=.V C C 3 Vds (Volts) Fig : On-Region Characteristics... Vgs (Volts) Figure : Transfer Characteristics Vgs=.8V Vgs=.V Vgs=.V Normalized On-Resistance.6.. Id=3.A Vgs=.8V Vgs=.V Vgs=.V 8 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature ( C) Figure : On-Resistance vs. Junction Temperature E C Id=3.A C Is (A) E+ E- E- E-3 E- C C 6 8 Vgs (Volts) Figure : On-Resistance vs. Gate-Source Voltage E Vsd (Volts) Figure 6: Body-Diode Characteristics 7-3 Rev..
4 ELM66EA-S 8 Vgs (Volts) 3 Vds=V Id=3.A Capacitance (pf) 6 C oss C iss C rss 6 8 Q g (nc) Figure 7: Gate-Charge Characteristics Vds (Volts) Figure 8: Capacitance Characteristics Id (Amps).... Tj(max.)= C Ta= C Rds(on) limited s s.s DC ms s ms s. Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note ) Power (W) Tj(max.)= C Ta= C... Figure : Single Pulse Power Rating Junction-to- Ambient (Note ) Z ja Normalized Transient Thermal Resistance. D=T on /T T j,pk =T a +P dm.z ja.r ja R ja = C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse Pd T on T Figure : Normalized Maximum Transient Thermal Impedance 7 - Rev..
5 Electrical Characteristics (P-ch) STATIC PARAMETERS ELM66EA-S Ta= C. Unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Drain-source breakdown voltage BVdss Id=-μA, Vgs=V - V Zero gate voltage drain current Idss Vds=-6V, Vgs=V - Ta= C - Gate-body leakage current Igss Vds=V, Vgs=±8V ± na Gate threshold voltage Vgs(th) Vds=Vgs, Id=-μA V On state drain current Id(on) Vgs=-.V, Vds=-V - A Static drain-source on-resistance Vgs=-.V 86 Id=-.A Ta= C 6 Rds(on) Vgs=-.V, Id=-A 3 Vgs=-.8V, Id=-A Forward transconductance Gfs Vds=-V, Id=-3A 6 S Diode forward voltage Vsd Is=-A, Vgs=V V Max. body-diode continuous current Is - A DYNAMIC PARAMETERS Input capacitance Complementary MOSFET Ciss Output capacitance Coss Vgs=V, Vds=-V, f=mhz 7 pf μa mω 7 pf Reverse transfer capacitance Crss 9 pf Gate resistance Rg Vgs=V, Vds=V, f=mhz..6 Ω SWITCHING PARAMETERS Total gate charge Qg nc Vgs=-.V, Vds=-V Gate-source charge Qgs.6 nc Id=-.A Gate-drain charge Qgd.6 nc Turn-on delay time td(on) ns Turn-on rise time tr Vgs=-.V, Vds=-V ns Turn-off delay time td(off) RL=3.9Ω, Rgen=3Ω ns Turn-off fall time tf ns Body diode reverse recovery time trr If=-.A, dif/dt=a/μs. 8. ns Body diode reverse recovery charge Qrr If=-.A, dif/dt=a/μs 7. nc NOTE :. The value of Rθja is measured with the device mounted on in² FR- board of oz. Copper, in still air environment with Ta= C. The value in any given applications depends on the user s specific board design, The current rating is based on the t s themal resistance rating.. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.. The static characteristics in Figures to 6 are obtained using 8μs pulses, duty cycle.%max.. These tests are performed with the device mounted on in² FR- board with oz. Copper, in a still air environment with Ta= C. The SOA curve provides a single pulse rating. 7 - Rev..
6 ELM66EA-S Typical Electrical and Thermal Characteristics (P-ch) -.V -3.V -.V 6 Vds=-V -8V -Id (A) -.V -Id (A) Vgs=-.V C C 3 -Vds (Volts) Fig : On-Region Characteristics.. -Vgs (Volts) Figure : Transfer Characteristics.8 Vgs=-.8V Vgs=-.V Vgs=-.V Normalized On-Resistance.6.. Id=-.A Vgs=-.8V Vgs=-.V Vgs=-.V 6 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature ( C) Figure : On-Resistance vs. Junction Temperature E+ E+ C Id=-.A C -Is (A) E- E- E-3 E- C C E Vgs (Volts) Figure : On-Resistance vs. Gate-Source Voltage E Vsd (Volts) Figure 6: Body-Diode Characteristics 7-6 Rev..
7 ELM66EA-S 8 -Vgs (Volts) 3 Vds=-V Id=-.A Capacitance (pf) 6 C rss C iss C oss 6 8 -Q g (nc) Figure 7: Gate-Charge Characteristics -Vds (Volts) Figure 8: Capacitance Characteristics -Id (Amps).... Tj(max.)= C Ta= C Rds(on) limited s s.s DC ms ms s s. -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note ) Power (W) Tj(max.)= C Ta= C... Figure : Single Pulse Power Rating Junction-to- Ambient (Note ) Z ja Normalized Transient Thermal Resistance. D=T on /T T j,pk =T a +P dm.z ja.r ja R ja = C/W Single Pulse In descending order D=.,.3,.,.,.,., single pulse Pd T on T Figure : Normalized Maximum Transient Thermal Impedance 7-7 Rev..
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Features: Super high dense cell design for low R DS(ON) Rugged and reliable Surface Mount Package B VDSS =20V, R DS(ON) =24.5mΩ ID=6A Application DC-DC converters Power management in portable and Battery-powered
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AO 3V Complementary MOSFET General Description The AO uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a highspeed power inverter, suitable
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DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationVDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 180. Qrr (nc) typ 54. * Dynamic R(on)
600V Cascode GaN FET in TO-220 (drain tab) Description The 600V, 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster
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More informationS2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6
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P-Channel ( SOT--6 ) Unit: mm. -. Features 6. VS (V) =-6V I =-. A (VGS =-V) RS(ON) < 9mΩ (VGS =-V) RS(ON) < mω (VGS =-.V) -..6.8 -.. +. -.. -. +. -.. -. -..68 -. G S Absolute Maximum Ratings Ta = Parameter
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PRELIMINARY TPH3205ESBET 600V GaN FET in TO-268 (source tab) Description The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT
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DESCRIPTION The is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to
More informationTop View. Symbol Max n-channel Max p-channel Units Drain-Source Voltage Symbol
AO668 V Complementary MOSFET General Description The AO668 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
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AOE693 3V Dual Asymmetric N-Channel AlphaMOS General Description Bottom Source Technology Very Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary Q Q V
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V Dual NChannel MOSFET General Description The AO89 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching
More informationVDS (V) min 650 VTDS (V) max 800 RDS(on) (mω) max* 130. Qrr (nc) typ 54. * Dynamic R(on)
650V Cascode GaN FET in TO-220 (source tab) Description The TPH3208PS 650V, 110mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationSSF2449. GENERAL FEATURES VDS = -20V,ID =-5A RDS(ON) < Application PWM applications Load switch Power management
DESCRIPTION The SSF2449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or
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650V Cascode GaN FET in TO-220 (source tab) Description The TPH3212PS 650V, 72mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationSMC3535K. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -5.8A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS
Single P-Channel MOSFET ESCRIPTION SMC33 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RS(ON),
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More informationFeatures. Description. AM01475v1_Tab. Table 1: Device summary Order code Marking Package Packing STW240N10F7 240N10F7 TO-247 Tube
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More informationTO-3P(Q) Description Symbol Characteristics Unit Remarks. Ta=25 C W 315 Tc=25 C Operating and Storage Tch 150 C Temperature range Tstg -55 to C
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DESCRIPTION The is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored
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Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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P-Channel Enhancement Mode MOSFET Description The is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density
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N- & annel Enhancement Mode P2OAG TSOP- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 2V mω.a annel -2V 5mΩ -2.5A G D G D D S D2 5 2 G : GATE D : DRAIN S : SOURCE S S G S2 G2 ABSOLUTE MAXIMUM RATINGS (T
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2V Dual PChannel MOSFET General Description The AON283 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltage as low as.8v. This device is suitable
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3V Complementary MOSFET General Description AO463 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for
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More informationV DS. Pin 1 G1 D2. Maximum Drain-Source Voltage -12 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C V GS I D I DM P D
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DESCRIPTION The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
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WPM9435 P-Channel Enhancement Mode MOSFET www.willsemi.com escription The WPM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, MOS trench
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N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID 650 V 0.38 Ω 11 A Figure 1:
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