SSG4501-C N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V, R DS(ON) 28mΩ P-Ch: -5.3A, -30 V, R DS(ON) 50mΩ

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Sophia Carr
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RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

1 RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. SOP-8 B L D FEATURES Simple Drive Requirement Lower On-resistance Fast Switching Performance A C J K M N MARKING 4501SS = Lot Code PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch H G REF. Millimeter Millimeter REF. Min. Max. Min. Max. A H B J REF. C K 45 REF. D 0 8 L E M F N 0.25 REF. G 1.27 TYP. S1 G1 D1 D1 F E ORDER INFORMATION Part Number Type Lead (Pb)-free and Halogen-free S2 G2 D2 D2 ABSOLUTE MAXIMUM RATINGS Parameter Symbol N-Ch Ratings P-Ch Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current 3 TA=25 C A ID TA=100 C A Pulsed Drain Current 1 IDM A Total Power Dissipation TA=25 C P D 2 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 C Thermal Data Thermal Resistance Junction-ambient 3 (Max.) RθJA 62.5 C / W 06-Dec-2018 Rev. B Page 1 of 9

2 N-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS V VGS=0, ID=250uA Breakdown Voltage Temp. Coefficient BVDS/ TJ V/ C Reference to 25 C, I D=1mA Gate Threshold Voltage VGS(th) V VDS=VGS, ID=250uA Forward Transfer conductance gfs S VDS=10V, ID=7A Gate-Source Leakage Current IGSS - - ±100 na VGS = ±20V Drain-Source Leakage Current TJ=25 C VDS=30V, VGS=0 IDSS ua TJ=75 C VDS=24V, VGS=0 Static Drain-Source On-Resistance 2 RDS(ON) mω VGS=10V, ID=7A VGS=4.5V, ID=5A Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain ( Miller ) Change Qgd Turn-on Delay Time 2 Td(on) Rise Time Tr Turn-off Delay Time Td(off) Fall Time Tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Source-Drain Diode nc ns pf ID=7A VDS=24V VGS=4.5V VDD=15V VGS=10V ID=1A RG=3.3Ω RD=15Ω VGS=0 VDS=25V f=1.0mhz Forward On Voltage 2 VSD V IS=7A, VGS=0, TJ=25 C Continuous Source Current (Body Diode) IS A VD=VG=0V,VS=1.2V Notes: 1. Pulse width limited by Max. Junction temperature. 2. Pulse width 300us, duty cycle 2% 3. Surface mounted on 1 inch 2 copper pad of FR4 board; 135 C/W when mounted on min. copper pad. 06-Dec-2018 Rev. B Page 2 of 9

3 P-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS V VGS=0, ID= -250uA Breakdown Voltage Temp. Coefficient BVDS/ TJ V/ C Reference to 25 C, I D= -1mA Gate Threshold Voltage VGS(th) V VDS=VGS, ID= -250uA Forward Transfer conductance gfs S VDS= -10V, ID= -5.3A Gate-Source Leakage Current IGSS - - ±100 na VGS=±20V Drain-Source Leakage Current TJ=25 C VDS= -30V, VGS=0 IDSS ua TJ=75 C V DS= -24V, VGS=0 Static Drain-Source On-Resistance 2 RDS(ON) mω VGS= -10V, ID= -5.3A VGS= -4.5V, ID= -4.2A Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain ( Miller ) Change Qgd Turn-on Delay Time Td(on) Rise Time Tr Turn-off Delay Time Td(off) Fall Time Tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Source-Drain Diode nc ns pf ID= -5.3A VDS= -15V VGS= -10V VDS= -15V VGS= -10V ID= -1A RG=6Ω RD=15Ω VGS=0 VDS= -15V f=1.0mhz Forward On Voltage 2 VSD V IS= -2.6A, VGS=0V, TJ=25 C Continuous Source Current (Body Diode) IS A VD=VG=0V,VS= -1.2V Notes: 1. Pulse width limited by Max. Junction temperature. 2. Pulse width 300us, duty cycle 2% 3. Surface mounted on 1 inch 2 copper pad of FR4 board; 135 C/W when mounted on min. copper pad. 06-Dec-2018 Rev. B Page 3 of 9

4 CHARACTERISTIC CURVE (N-Ch) 06-Dec-2018 Rev. B Page 4 of 9

5 CHARACTERISTIC CURVE (N-Ch) 06-Dec-2018 Rev. B Page 5 of 9

6 CHARACTERISTIC CURVE (N-Ch) 06-Dec-2018 Rev. B Page 6 of 9

7 CHARACTERISTIC CURVE (P-Ch) 06-Dec-2018 Rev. B Page 7 of 9

8 CHARACTERISTIC CURVE (P-Ch) 06-Dec-2018 Rev. B Page 8 of 9

9 CHARACTERISTIC CURVE (P-Ch) 06-Dec-2018 Rev. B Page 9 of 9

Complementary MOSFET

General Description uses advanced trench technology to provide excellent Rds(on) and low gate charge. Complementary MOSFET Features N-channel Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)