Enhancement Mode MOSFET (N-Channel) 2N7002E. Features. Mechanical Data. Maximum TA=25 C unless noted otherwise SOT-23
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1 Enhancement Mode MOSFET (N-Channel) Enhancement Mode MOSFET (N-Channel) Features High density cell design for low RDS(ON). Voltage controlled small signal switch Rugged and reliable High saturation current capability RoHS Compliance, Halogen Free SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: gram Maximum TA=25 C unless noted otherwise Symbol Description 2N7002Z Unit VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS 1MΩ) 60 V VGSS Gate-Source Voltage Continuous ±20 V Gate-Source Voltage Non Repetitive (tp <50µs) ±40 V ID Drain Current Continuous 300 ma IDP Drain Current Pulsed 800 ma PD Total Power Dissipation 200 mw 1.6 mw/ C TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ +150 C RθJA Junction to Ambient 625 C/W TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800) (661) Fax: (800)-TAITFAX (800) (661) Page 1 of 8
2 Electrical TA=25 C unless noted otherwise Off Characteristics Enhancement Mode MOSFET (N-Channel) V(BR)DSS Drain-Source Breakdown Voltage V VGS=0V, ID=10µA IDSS Drain-Source Leakage Current μa VDS=60V, VGS=0V IGSS Gate-Source Leakage Current - - ±100 na VGS=±20V, VDS=0V On Characteristics (Note) VGS(th) Gate Threshold Voltage V VGS=VDS, ID=250uA VDS(ON) Drain-Source On-Voltage V VGS=10V, ID=0.5A V VGS=5V, ID=0.05A ID(ON) On-State Drain Current A VGS=10V, VDS 2VDS(ON) RDS(ON) Static Drain-Source On Resistance VGS=10V, ID=0.5A Ω VGS=5V, ID=0.05A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance pf VDS=25V, VGS=0V, f=1mhz Switching Characteristics (Note) ton Turn-On Time toff Turn-Off Time ns ID=200mA, VDD=30V, VGS=10V, RL=150Ω, RGEN=25Ω ID=200mA, VDD=30V, VGS=10V, RL=25Ω, RGEN=25Ω Page 2 of 8
3 Drain-Source Diode Characteristics and Maximum Ratings Enhancement Mode MOSFET (N-Channel) VSD Drain-Source Diode Forward Voltage (Note) V VGS=0V, IS=115mA ISM IS Maximum Pulsed Drain-Source Diode Forward Current Maximum Continuous Drain-Source Diode Forward Current Note: Pulse Width 300 μs, Duty cycle 2.0 % A ma - Typical Characteristics Curves Fig.1- Typical Output Characteristics Fig.2- Typical Transfer Characteristics Drain-Source Voltage VDS (V) Gate-Source Voltage VGS (V) Page 3 of 8
4 Gate Threshold Voltage VGS(th) (V) Fig.3- Gate Threshold Voltage vs. Junction Temperature Static Drain-Source On-state Resistance RDS (Ω) Fig.4- Static Drain-Source On-state Resistance vs. Drain Current Junction Temperature TJ ( C) Fig.5- Static Drain-Source On-state Resistance vs. Drain Current and Temperature Fig.6- Static Drain-Source On-state Resistance vs. Junction Temperature Static Drain-Source On-state Resistance RDS (Ω) Static Drain-Source On-state Resistance RDS (Ω) Junction Temperature TJ ( C) Page 4 of 8
5 Breakdown Voltage VBR(DSS) (V) Typical Characteristics Curves (Cont.) Fig.7- Breakdown Voltage vs. Junction Temperature Junction Temperature TJ ( C) Fig.8- Drain-Source Diode Forward Voltage vs. Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VSD (V) Fig.9- Capacitance vs Drain-Source Voltage Fig.10- Gate Charge vs Gate-Source Voltage Capacitance (pf) Gate-Source Voltage VGS (V) Drain-Source Diode Forward Current IS (A) Drain-Source Voltage VDS (V) Gate charge Qg (nc) Page 5 of 8
6 Fig.11- Drain-Source Voltage vs Drain Current Fig.12- Effective Transient Thermal Response Effective Transient Thermal Response RθJA ( C/W) Drain-Source Voltage VDS (V) Pulse Width t (s) Switching Characteristics Measurement Circuit Fig.13- Switching Time Measurement Circuit Fig.14- Switching Time Waveforms Page 6 of 8
7 Equivalent Circuit: Marking Information: Dimensions in mm: Page 7 of 8
8 How to contact us: US HEADQUARTERS WEST HARRISON PARKWAY, VALENCIA, CA Tel: (800) TAITRON (800) (661) Fax: (800) TAITFAX (800) (661) TAITRON COMPONENTS MEXICO, S.A.DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P MEXICO Tel: Fax: TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP BRAZIL Tel: Fax: TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN AN ROAD, SUITE 1503, SHANGHAI, , CHINA Tel: Fax: Page 8 of 8
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