N-Channel Enhancement Mode Field Effect Transistor 2N7000A. Features. Mechanical Data. Maximum Ratings (T Ambient =25ºC unless noted otherwise)

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1 Features N-Channel Enhancement Mode Field Effect Transistor High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability RoHS compliance TO-92 Mechanical Data Case: TO-92, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: 0.18 gram Maximum Ratings (T Ambient =25ºC unless noted otherwise) Symbol Description Unit VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Continuous 500 ma Drain Current IDP Pulsed (Note 1) 2000 ma PD Drain Power Dissipation 625 mw TJ Junction Temperature 150 C TSTG Storage Temperature Range -55 to +150 C Note 1: Pulse Width<10µs, Duty Cycle<1% TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800) (661) Fax: (800)-TAITFAX (800) (661) Page 1 of 8

2 Equivalent Circuit This transistor is electrostatic sensitive device. Please handle with caution. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Typ. Max. Unit Conditions BVDSS Drain-Source Breakdown Voltage V VGS=0V, ID=10µA IDSS Zero Gate Voltage Drain Current µa VDS=60V, VGS=0V IGSSF Gate- Body Leakage, Forward na VGS=20V, VDS=0V IGSSR Gate- Body Leakage, Reverse na VGS=-20V, VDS=0V On Characteristics (Note 2) Symbol Description Min. Typ. Max. Unit Conditions Vth Gate Threshold Voltage V VDS=VGS, ID=250µA RDS(ON) VDS(ON) Drain-Source ON Resistance Drain-Source ON Voltage Ω VGS=10V, ID=500mA Ω VGS=5V, ID=50mA V VGS=10V, ID=500mA V VGS=5V, ID=50mA ID(ON) On State Drain Current ma VGS=10V, VDS 2VDS(ON) gfs Forward Transconductance ms VDS=10V, ID=500mA VSD Drain-Source Diode Forward Voltage V VGS=0V, IS=200mA(Note 1) Page 2 of 8

3 Note 2: Pulse Test: Pulse Width<80µs, Duty Cycle<1% Dynamic Characteristics Symbol Description Min. Typ. Max. Unit Conditions CISS Input Capacitance pf CRSS Reverse Transfer Capacitance pf VDS=25V, VGS=0V, f=1mhz COSS Output Capacitance pf ton Turn-on Time ns Switching Time toff Turn-off Time ns VDD=30V, RL=155Ω, ID=190mA, VGS=10V Switching Time Test Circuit Page 3 of 8

4 Typical Characteristics Curves Fig.1- ID - VDS Fig.2- RDS(ON) - ID Drain Current ID (A) Drain-Source ON Resistance RDS(ON) (Ω) Drain-Source Voltage VDS (V) Drain Current ID (A) Fig.3- RDS(ON) - TJ Fig.4- ID - VGS Drain-Source ON Resistance RDS(ON) (Ω) Drain Current ID (A) Junction Temperature TJ ( C) Gate-Source Voltage VGS (V) Page 4 of 8

5 Gate-Source Threshold Voltage Vth (V) Fig.5- Vth - TJ Reverse Drain Current IS (A) Fig.6- Is - VSD Junction Temperature TJ ( C) Body Diode Forward Voltage VSD (V) Fig.7- C - VDS Fig.8- VGS - Qg Capacitance C (pf) Gate-Source Voltage VGS (V) Drain Source Voltage VDS (V) Gate Charge Qg (nc) Page 5 of 8

6 Fig.9- SOA Fig.10- PD - TA Drain Current ID (A) Drain Power Dissipation PD (mw) Drain Source Voltage VDS (V) Ambient Temperature TA ( C) Page 6 of 8

7 Dimensions in mm TO-92 Page 7 of 8

8 How to contact us: US HEADQUARTERS WEST HARRISON PARKWAY, VALENCIA, CA Tel: (800) TAITRON (800) (661) Fax: (800) TAITFAX (800) (661) TAITRON COMPONENTS MEXICO, S.A.DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P MEXICO Tel: Fax: TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP BRAZIL Tel: Fax: TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN AN ROAD, SUITE 1503, SHANGHAI, , CHINA Tel: Fax: Page 8 of 8

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