Enhancement Mode MOSFET (N-Channel) 2N7002K. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise) SOT-23

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1 Enhancement Mode MOSFET (N-Channel) Enhancement Mode MOSFET (N-Channel) Features ESD Protected 2000V High density cell design for low R DS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability RoHS Compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Unit VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current Continuous 300 ma IDP Drain Current Pulsed (Note 1) 1200 ma PD Drain Power Dissipation (Note 2) 300 mw TJ Junction Temperature +150 C TSTG Storage Temperature Range -55 to +150 C ESD Gate-Source ESD Rating 2000 V TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800) (661) Fax: (800)-TAITFAX (800) (661) Page 1 of 8

2 Enhancement Mode MOSFET (N-Channel) Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics V(BR)DSS Drain-Source Breakdown Voltage V VGS=0V, ID=10µA IDSS Zero Gate Voltage Drain Current ua VDS=60V, VGS=0V IGSS Gate-Source Leakage Current - - ±10 μa VGS=±20V, VDS=0V On Characteristics (Note3) VGS(th) Gate Threshold Voltage V VDS=VGS, ID=250μA RDS(ON) VDS(ON) Drain-Source ON Resistance Drain-Source ON Voltage VGS=10V, ID=500mA Ω VGS=5V, ID=50mA VGS=10V, ID=500mA V VGS=5V, ID=50mA ID(ON) ON State Drain Current ma VGS=10V,VDS>2 VDS(ON) g FS Forward Transconductance ms VDS=10V, ID=500mA Dynamic Characteristics Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance pf VDS=25V, VGS=0V, f=1mhz Switching Characteristics ton Turn-On Time toff Turn-Off Time ns VDD=30V, RL=155Ω ID=190mA, VGS=10V Page 2 of 8

3 Drain-Source Diode Ratings and Maximum Ratings Enhancement Mode MOSFET (N-Channel) VSD Source-Drain Forward Voltage (Note 1) mv VGS=0V, IS=200mA(Note1) Note: 1. Pulse width 10µS, duty cycle 1% 2. Package mounted on a glass epoxy PCB(100mm 2 x1mm). 3. Pulse width 80µS, duty cycle 1%. Typical Characteristics Curves Fig.1- Typical Output Characteristics Fig.2- Drain-Source On-Resistance vs. Drain Current Drain Source On-Resistance RDS (Ω) Drain Current ID (A) Drain- Source Voltage VDS (V) Drain Current ID (A) Page 3 of 8

4 Drain Current ID (A) Reverse Drain Current IS (A) Drain Source On-Resistance RDS (Ω) Gate-Source Threshold Voltage VGS(th) (V) Enhancement Mode MOSFET (N-Channel) Fig.3- On-Resistance vs. Junction Temperature Fig.4- Gate Threshold Voltage vs. Junction Temperature Junction Temperature TJ ( C) Junction Temperature TJ ( C) Fig.5- Drain Current vs. Gate-Source Voltage Fig.6- Reverse Drain Current vs. Body Diode Forward Voltage Gate-Source Voltage VGS (V) Source-Drain Forward Voltage VSD (V) Page 4 of 8

5 Drain Current ID (A) Drain Power Dissipation Pd(mW) Gate-Source Voltage VGS (V) Capacitance (pf) Enhancement Mode MOSFET (N-Channel) Fig.7- Gate Charge Characteristics Fig.8- Typical Capacitance Characteristics Gate Charge Qg (nc) Drain-Source Voltage VDS (V) Fig.9- Drain-Source Voltage vs Drain Current Fig.10- Power Dissipation Vs. Ambient Temperature Drain-Source Voltage VDS (V) Ambient Temperature TA ( C) Page 5 of 8

6 Enhancement Mode MOSFET (N-Channel) Switching Time Test Circuit Equivalent Circuit Page 6 of 8

7 Enhancement Mode MOSFET (N-Channel) Marking Information: Dimensions in mm SOT-23 Page 7 of 8

8 Enhancement Mode MOSFET (N-Channel) How to contact us: US HEADQUARTERS WEST HARRISON PARKAWAY, VALENCIA, CA Tel: (800) TAITRON (800) (661) Fax: (800) TAITFAX (800) (661) TAITRON COMPONENTS MEXICO, S.A.DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P MEXICO Tel: Fax: TAITRON COMPONENTS INCORPORATED TAIWAN, TAIPEI 5F-2, NO. 77, SEC. 1, HSIN TAI WU ROAD, HSI-CHIH, TAIPEI HSIEN, TAIWAN R.O.C. Tel: Fax: TAITRON COMPONETS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN AN ROAD, SUITE 1503, SHANGHAI, , CHINA Tel: Fax: Page 8 of 8