SMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF) Features. Absolute Maximum Ratings Ta = 25

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1 P-Channel SOT Unit: mm Features VDS (V) =-V ID =-5. A (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.V) Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish Gate. Source. Drain G D S Absolute Maximum Ratings Ta = 5 Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VDS VGS TA = 5 C ID TA = 7 C Pulsed Drain Current - Power Dissipation TA = 5 C PD.5.75 W TA = 7 C.. Thermal Resistance.Junction- to-ambient RthJA 66 Thermal Resistance.Junction- to-foot RthJF - 5 /W Junction Temperature Junction Storage Temperature Range IDM TJ Tstg - ± V A 5-55 to 5

2 Electrical Characteristics Ta = 5 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-5μA, VGS=V - V Zero Gate Voltage Drain Current IDSS VDS=-9.6V, VGS=V - ua VDS=-9.6V, VGS=V, TJ=55 - Gate-Body leakage current IGSS VDS=V, VGS=±V ± na Gate Threshold Voltage VGS(th) VDS=VGS ID=-5μA -. - V VGS=-.5V, ID=-5.A Static Drain-Source On-Resistance (Note.) P-Channel RDS(On) VGS=-.5V, ID=-.6A mω VGS=-.V, ID=-A 59 On state drain current (Note.) ID(ON) VGS=-5V, VDS=-.5V - A Forward Transconductance (Note.) gfs VDS=-5V, ID=-5.A 7 S Input Capacitance Ciss Output Capacitance Coss VGS=V, VDS=-6V, f=mhz 9 pf Reverse Transfer Capacitance Crss Total Gate Charge Qg.5 Gate Source Charge Qgs VGS=-.5V, VDS=-6V, ID=-5.A.5 nc Gate Drain Charge Qgd. Turn-On DelayTime td(on) 5 Turn-On Rise Time tr VGS=-.5V, VDS=-6V, RL=6Ω, 5 7 Turn-Off DelayTime td(off) RG=6Ω,ID=-A 7 ns Turn-Off Fall Time tf 6 9 Maximum Body-Diode Continuous Current IS - A Diode Forward Voltage VSD IS=-A,VGS=V -. V Note.:Pulse test: PW μs, duty cycle %. Marking Marking E* F

3 P-Channel 6 V GS = 5 V thru.5 V V 6 T C = - 55 C 5 C.5 V 5 C V 5 Output Characteristics Transfer Characteristics. 5 - On-Resistance (Ω) R DS(on).9.6. V GS =. V V GS =.5 V C - Capacitance (pf) 9 6 C rss C oss C iss V GS =.5 V On-Resistance vs. Drain Current Capacitance 5. V DS = 6 V I D = 5. A R DS(on) - On-Resistance (Normalized) V GS =.5 V I D = 5. A Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature

4 P-Channel.5 I S - Source Current (A) T J = 5 C T J = 5 C - On-Resistance (Ω) R DS(on) I D = A I D = 5. A V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage.. 5 On-Resistance vs. Gate-to-Source Voltage. I D = µa Variance (V) V GS(th)... Power (W) 6 T A = 5 C T J - Temperature ( C) Threshold Voltage Limited by R DS(on)*.. 6 Time (s) Single Pulse Power I DM Limited. I D(on) Limited T A = 5 C P(t) = Single Pulse P(t) = DC BVDSS Limited P(t) =. P(t) =. P(t) =. P(t) =... * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area

5 P-Channel Normalized Effective Transient Thermal Impedance.. - Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = C/W. T JM - T A = P DM Z (t) thja. Surface Mounted 5