MOSFET SI7129DN (KI7129DN)

Transcription

1 P-Channel SI79N (KI79N) Features -8 (FN) VS (V) =-3V I =-35 A (VGS =-V) RS(ON) <.mω (VGS =-V) RS(ON) < mω (VGS =-.5V) S 3.3 mm S S 3.3 mm S 3 G G Bottom V ie w Absolute Maximum Ratings Ta = 5 Parameter Symbol Rating Unit rain-source Voltage Gate-Source Voltage Continuous rain Current Pulsed rain Current VS -3 VGS ± TC=5-35 TC=7-35 Ta=5 (Note. and ) -. Ta=7 (Note. and ) -.5 IM -6 Avalanche Current L=.mH IAS -5 Single-Pulse Avalanche Energy EAS 3.5 mj TC=5 5. Power issipation TC=7 P 3.3 W Ta=5 (Note. and ) 3.8 Ta=7 (Note. and ). Thermal Resistance.Junction- to-ambient Junction Temperature t s (Note. and ) TJ RthJA 5 33 Thermal Resistance.Junction- to-case Junction Storage Temperature Range Steady State Tstg RthJC -55 to 5. /W I V A Note.: Surface mounted on " x " FR board. Note.: t = s.

2 P-Channel SI79N (KI79N) Electrical Characteristics Ta = 5 Parameter Symbol Test Conditions Min Typ Max Unit rain-source Breakdown Voltage VSS I=-5μA, VGS=V -3 V Zero Gate Voltage rain Current ISS VS=-3V, VGS=V - VS=-3V, VGS=V, TJ=55 - μa Gate-Body leakage current IGSS VS=V, VGS=±V ± na Gate Threshold Voltage VGS(th) VS=VGS I=-5μA V Static rain-source On-Resistance (Note.) VGS=-V, I=-.A 9.5. mω VGS=-.5V, I=-.5A 6 On state drain current (Note.) I(ON) VGS=-V, VS=-5V - A Forward Transconductance (Note.) gfs VS=-5V, I=-.A 37 S Input Capacitance Ciss Output Capacitance Coss VGS=V, VS=-5V, f=mhz pf Reverse Transfer Capacitance Crss 3 Gate resistance Rg VGS=V, VS=V, f=mhz Ω Total Gate Charge RS(On) Qg VGS=-V, VS=-5V, I=-.A Gate Source Charge Qgs VGS=-.5V, VS=-5V, I=-.A 7.7 Gate rain Charge Qgd Turn-On elaytime td(on) 5 75 Turn-On Rise Time tr VGS=-.5V, VS=-5V, RL=.5Ω, 3 65 Turn-Off elaytime td(off) RG=Ω,I=-A 3 5 Turn-Off Fall Time tf Turn-On elaytime td(on) Turn-On Rise Time tr VGS=-V, VS=-5V, RL=.5Ω, 9 8 Turn-Off elaytime td(off) RG=Ω,I=-A 36 5 Turn-Off Fall Time tf Body iode Reverse Recovery Time trr 3 7 Body iode Reverse Recovery Charge Qrr 3 5 nc IF=-A, di/dt=a/μs,tj=5 Reverse Recovery Fall Time ta 5 ns Reverse Recovery Rise Time tb 6 Maximum Body-iode Continuous Current IS Tc=5-35 A Pulse iode Forward Currenta (Note.) ISM -6 iode Forward Voltage VS IF=-A V Note.: Pulse test; pulse width 3 μs, duty cycle %. nc ns

3 P-Channel 6 Typical Characterisitics V GS = V thru 5 V SI79N (KI79N). I - rain Current (A) V I - rain Current (A) ºC 5 ºC - 55 ºC V S - rain-to-source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics RS - On-Resistance (mω) V GS =.5 V V GS = V C - Capacitance (pf) 8 6 C iss C oss C rss I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage V S - rain-source Voltage (V) Capacitance.8 I =. A V GS - Gate-to-Source Voltage (V) 8 6 V S = 5 V, I =. A V S = V, I =. A R S(on) - On-Resistance (normalized).5..9 V GS = V V GS =.5 V 3 5 Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature (ºC) On-Resistance vs. Junction Temperature 3

4 P-Channel SI79N (KI79N) Typical Characterisitics. I S - Source Current (A) T J = 5 ºC T J = 5 ºC V S - Source-to-rain Voltage (V ) R S(on) - rain-to-source On-Resistance (Ω).3. T J = 5 ºC. T J = 5 ºC V GS - Gate-to-Source Voltage (V) Source-rain iode Forward Voltage On-Resistance vs. Gate-to-Source Voltage.. I = 5 µa 5 V GS(th) (V)..8.6 Power (W) T J - Temperature (ºC)... Time (s) Single Pulse Power, Junction-to-Ambient Limited by R S(on) * µs I - rain Current (A). ms ms ms s s T A = 5 ºC Single Pulse BVSS Limited C.. V S - rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is Specified Safe Operating Area, Junction-to-Ambient

5 P-Channel SI79N (KI79N) Typical Characterisitics 6 5 I - rain Current (A) T C - CaseTemperature ( C) Current erating Power (W) 5 3 Power (W) T C - Case Temperature (ºC) Power, Junction-to-Case T A - Ambient Temperature (ºC) Power, Junction-to-Ambient 5

6 P-Channel SI79N (KI79N) Typical Characterisitics uty Cycle =.5 Normalized Effective Transient Thermal Impedance.. Notes:..5 P M t. t t. uty Cycle, = t. Per Unit Base = R thja = 5 C/W 3. T JM - T A = P M Z (t) thja Single Pulse.. Surface Mounted Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient uty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6

7 θ SM Type PowerPAK -8 (FN), SINGLE/UAL W H E E K L 8 M e Z b θ θ θ L A E3 Backside View of Single Pad c A H E E K L E E Notes:. Inch will govern. imensions exclusive of mold gate burrs etail Z H 3(x) K 5 3 b 3. imensions exclusive of mold flash and cutting burrs E3 Backside View of ual Pad M ILLIM E TE R S IN C H E S IM. MIN. NOM. MAX. MIN. NOM. MAX. A A b c TYP..85 TYP. 5.3 TYP..9 TYP. E E E E E.3 TYP..3 TYP. e.65 BSC.6 BSC K.86 TYP..3 TYP. K H L L θ - - W M.5 TYP..5 TYP. 7

8 PowerPAK -8 (FN), SINGLE/UAL Figure. PowerPAK (FN)evices RECOMMENE MINIMUM PAS FOR PowerPAK -8 (FN) Single.5 (3.86).39 (.99).68 (.75). (.55).6 (.5)..88 (.35).9 (.39).6 (.66).5 (.635).3 (.76) Recommended Minimum Pads imensions in Inches/(mm) 8