WPM1481 WPM1481. Descriptions. Features WLSI CYWW. Applications. Order information.

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1 Single P-Channel, -12, -5.1A, Power MOSFET S () Typical Rds(on) (Ω) I (A).24@ = @ = @ = FN2*2-6L escriptions The is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R S (ON) with low gate charge. This device is suitable for use in C-C conversion, power switch and charging circuit. Standard Product is Pb-free. S S G Pin configuration (Top view) Features Trench Technology Supper high density cell design Excellent ON resistance for higher C current Extremely Low Threshold oltage Small package FN2*2-6L WLSI C Y WW WLSI CYWW = Company Code = evice Code = Year = Week Applications river for Relay, Solenoid, Motor, LE etc. C-C converter circuit Marking Order information evice Package Shipping Power Switch - 6/TR FN2*2-6L 3/Reel&Tape Load Switch Charging Will Semiconductor Ltd /8/5- Rev.1.5

2 Absolute Maximum ratings Parameter Symbol 1 S Steady State Unit rain-source oltage S -12 Gate-Source oltage ±12 Continuous rain Current a d T A=25 C I T A=7 C A Maximum Power issipation a d T A=25 C P T A=7 C W Continuous rain Current b d T A=25 C I T A=7 C A Maximum Power issipation b d T A=25 C P 1..6 T A=7 C.6.4 W Pulsed rain Current c I M -24 A Operating Junction Temperature T J -55~15 C Lead Temperature T L 26 C Storage Temperature Range T stg -55 ~15 C Thermal resistance ratings Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Parameter Symbol Typical Maximum Unit t 1 s R θja Steady State t 1 s R θja Steady State Junction-to-Case Thermal Resistance Steady State R θjc C/W a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width<38µs, Single pulse d Maximum junction temperature T J=15 C. e Pulse test: Pulse width <38 us duty cycle <2%. Will Semiconductor Ltd /8/5- Rev.1.5

3 Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS rain-to-source Breakdown oltage B SS =, I = -25uA -12 Zero Gate oltage rain Current I SS S = -1, = -1 ua Gate-to-source Leakage Current I S S =, =±1 ±1 na ON CHARACTERISTICS Gate Threshold oltage (TH) = S, I = -25uA rain-to-source On-resistance b, e R S(on) = -4.5, I = -5.5A = -4., I = -4.A 26 3 = -2.5, I = -4.A 32 4 = -1.8, I = -2.5A Forward Transconductance e g FS S =-5., I = -5.5A 23 S CAPACITANCES, CHARGES Input Capacitance C ISS =, Output Capacitance C OSS f = 1. MHz, 437 Reverse Transfer Capacitance C RSS S = Total Gate Charge Q G(TOT) 44.5 = -4.5, Threshold Gate Charge Q G(TH) 3.5 S = -1, Gate-to-Source Charge Q I = -5.5A 1.7 Gate-to-rain Charge Q G 9.25 SWITCHING CHARACTERISTICS Turn-On elay Time td (ON) = -4.5, Rise Time tr S = -6, 35.6 Turn-Off elay Time td (OFF) R L=3 Ω, 5 Fall Time tf R G=6 Ω 63 BOY IOE CHARACTERISTICS Forward oltage S =, I S = 1.A mω pf nc ns Will Semiconductor Ltd /8/5- Rev.1.5

4 Typical Characteristics (Ta=25 o C, unless otherwise noted) 2 2 Normalized n-resistance R - n-resist m S(ON) -I -rain-to-source Current(A) 15 =-4.5 =-3.7 =-5 =-2.5 Normalized Gate Threshold oltage R -On-Resistance(m ) - I -rain to Source Current(A) S(ON) S 1 = S T=125 C 5 5 =-1.5 T=-55 C T=25 C rain-to-source oltage() - -Gate to Source oltage() S Output characteristics =-1.8 =-2.5 = Transfer characteristics I =-5.5A rain-to-source oltage() - -Gate-to-Source oltage() S On-Resistance vs. rain current I = -5.5A = On-Resistance vs. Gate-to-Source voltage 1.2 I =-25uA Temperature( C) On-Resistance vs. Junction temperature Temperature ( o C) Threshold voltage vs. Temperature Will Semiconductor Ltd /8/5- Rev.1.5

5 C-Capactance (pf) f=1mhz Crss = Coss 28 Ciss I -Source to rain Current(A) S T=25 O C T=15 O C rain-to-source oltage() S - -Source-to rain oltage() S Capacitance Body diode forward voltage 4 1 Power (W) T J(Max) =15 C T A =25 C -I S -rain to Source Current(A) Limited by RS(on) T A = 25 C Single Pulse C BSS Limited 1us 1ms 1ms 1ms 1s 1s 1E Time (s) Single pulse power S - rain-to-source oltage () Safe operating power 5 4 = -1 S I = -5.5A - -Gate oltage () Qg(nC) Gate Charge Characteristics Will Semiconductor Ltd /8/5- Rev.1.5

6 1 Normalized Effective Transient T Impedance.1.1 uty Cycle = Single Pulse Square Wave Pulse uration (s) Notes: P M t1 t 2 t 1 1. uty Cycle, = t 2 2. Per Unit Base = RthJA = 66 C/W 3. T JM - T A = P MZ thj (t) A 4. Surface Mounted 1 1 Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd /8/5- Rev.1.5

7 PACKAGE OUTLINE IMENSIONS FN2x2-6L E E2 L b e TOP IEW BOTTOM IEW A A1 A2 k E1 SIE IEW Symbol imensions in Millimeters Min. Typ. Max. A A A2.2 Ref. b E E E2.56 Ref. e.65 BSC. L K Will Semiconductor Ltd /8/5- Rev.1.5

8 TAPE AN REEL INFORMATION Reel imensions R P1 Tape imensions W Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User irection of Feed R Reel imension W Overall width of the carrier tape 1 7inch 13inch 8mm 12mm 16mm P1 Pin1 Pitch between successive cavity centers Pin1 Quadrant 2mm 4mm 8mm Q1 Q2 Q3 Q4 Will Semiconductor Ltd /8/5- Rev.1.5