FREDFET FAST RECOVERY BODY DIODE = 0V, I D = 10V, I D = 29A) = 600V, V GS = 0V) = 0V, T C = 480V, V GS = 0V) = ±30V, V DS. = 5mA)

Transcription

1 APT6M75JFLL 6V A.75Ω POWER MOS 7 R FREFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R S(ON) and Q g. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. G S ISOTOP S SOT-227 "UL Recognized" Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg Increased Power issipation Easier To rive Popular SOT-227 Package FAST RECOVERY BOY IOE G S MAXIMUM RATINGS All Ratings: T C = 25 C unless otherwise specified. Symbol Parameter S rain-source Voltage Continuous rain T C = 25 C M Pulsed rain Current 1 Gate-Source Voltage Continuous M Gate-Source Voltage Transient Total Power T P C = 25 C Linear erating Factor,T STG Operating and Storage Junction Temperature Range T L Lead Temperature:.63" from Case for 1 Sec. I AR Avalanche Current 1 (Repetitive and Non-Repetitive) E AR Repetitive Avalanche Energy 1 E AS Single Pulse Avalanche Energy 4 STATIC ELECTRICAL CHARACTERISTICS APT6M75JFLL 6 ±3 ± to Watts W/ C C mj Symbol Characteristic / Test Conditions BS rain-source Breakdown Voltage ( = V, = 25µA) 6 R S(on) rain-source On-State Resistance 2 ( = 1V, = 29A) SS Zero Gate Voltage rain Current ( = 6V, = V) Zero Gate Voltage rain Current ( = 48V, = V, T C = 125 C) I GSS (th) Gate-Source Leakage Current ( = ±3V, = V) Gate Threshold Voltage ( =, = 5mA) ±1 3 5 CAUTION: These evices are Sensitive to Electrostatic ischarge. Proper Handling Procedures Should Be Followed. APT Website - Ohms µa na 5-71 Rev B 9-24

2 YNAMIC CHARACTERISTICS Symbol Characteristic C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Q g Total Gate Charge 3 Q gs Gate-Source Charge Q gd Gate-rain ("Miller") Charge t d(on) Turn-on elay Time t r Rise Time t d(off) Turn-off elay Time t f Fall Time Turn-on Switching Energy 6 SOURCE-RAIN IOE RATINGS AN CHARACTERISTICS Symbol Characteristic / Test Conditions I S Continuous Source Current (Body iode) I SM Pulsed Source Current 1 (Body iode) V S iode Forward Voltage 2 ( = V, I S = -A) Peak iode Recovery dv / 5 dt dv / dt t rr Q rr I RRM THERMAL CHARACTERISTICS Symbol Characteristic R θjc Junction to Case Junction to Ambient R θja.25 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Reverse Recovery Time (I S = -A, di / dt = 1A/µs) Reverse Recovery Charge (I S = -A, di / dt = 1A/µs) Peak Recovery Current (I S = -A, di / dt = 1A/µs) 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 38 µs, uty Cycle < 2% 3 See MIL-ST-75 Method 3471 Test Conditions = V = 25V f = 1 MHz = 1V = 3V = 25 C RESISTIVE SWITCHING = 3V = 25 C R G =.6Ω INUCTIVE 25 C = 4V, = A, R G = 5Ω INUCTIVE 125 C = 4V = A, R G = 5Ω APT Reserves the right to change, without notice, the specifications and inforation contained herein. APT6M75JFLL T j = 25 C 3 T j = 125 C 6 T j = 25 C 2.6 T j = 125 C 1 T j = 25 C 17 T j = 125 C V/ns ns µc C/W 4 Starting T j = +25 C, L = 1.9mH, R G = 25Ω, Peak I L = A 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. I S - A di / dt 7A/µs V R 6V 15 C 6 Eon includes diode reverse recovery. See figures 18, 2. pf nc ns µj 5-71 Rev B 9-24 Z θjc, THERMAL IMPEANCE ( C/W) t 2.5 uty Factor = t 1/t 2.1 Peak = P M x Z θjc + T C.5 SINGLE PULSE RECTANGULAR PULSE URATION (SECONS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEANCE, JUNCTION-TO-CASE vs PULSE URATION Note: P M t 1

3 Typical Performance Curves R S(ON), RAIN-TO-SOURCE ON RESISTANCE (NORMALIZE) Junction temp. ( C) FIGURE 2, TRANSIENT THERMAL IMPEANCE MOEL = +25 C = +125 C = -55 C APT6M75JFLL 8 6 6V 4 5.5V FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS , GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R S(ON) vs RAIN CURRENT > (ON) x R S(ON) MAX. 25µSEC. PULSE <.5 % UTY CYCLE T C, CASE TEMPERATURE ( C), JUNCTION TEMPERATURE ( C) FIGURE 6, MAXIMUM RAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKOWN VOLTAGE vs TEMPERATURE Power (watts) Case temperature. ( C) I = 29A V = 1 RC MOEL F.469F 44.2F , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 8, R S(ON) vs. TEMPERATURE FIGURE 9, THRESHOL VOLTAGE vs TEMPERATURE (TH), THRESHOL VOLTAGE BS, RAIN-TO-SOURCE BREAKOWN R S(ON), RAIN-TO-SOURCE ON RESISTANCE (NORMALIZE) VOLTAGE (NORMALIZE) =15 &1V NORMALIZE TO = = 29A =1V 8V 7.5V 7V 6.5 =2V 5-71 Rev B 9-24

4 5-71 Rev B 9-24, GATE-TO-SOURCE VOLTAGE (VOLTS) and (µj) t d(on) and t d(off) (ns) 1 5 OPERATION HERE LIMITE BY R S (ON) 1µS APT6M75JFLL 1 1mS 1 1mS T C =+25 C Crss =+15 C SINGLE PULSE FIGURE 1, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs RAIN-TO-SOURCE VOLTAGE = A = 12V = 3V = 48V Q g, TOTAL GATE CHARGE (nc) V S, SOURCE-TO-RAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-RAIN IOE FORWAR VOLTAGE V = 4V L = 1µH t d(on) t d(off) R, REVERSE RAIN CURRENT (AMPERES) C, CAPACITANCE (pf) 2, 1, 1, V = 4V L = 1µH =+15 C =+25 C (A) (A) FIGURE 14, ELAY TIMES vs CURRENT FIGURE 15, RISE AN FALL TIMES vs CURRENT V = 4V L = 1µH E ON includes diode reverse recovery (A) R G, GATE RESISTANCE (Ohms) FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE SWITCHING ENERGY (µj) t r and t f (ns) V = 4V I = A L = 1µH E ON includes diode reverse recovery t f t r Ciss Coss

5 APT6M75JFLL 1% Gate Voltage 125 C 9% 125 C t d(off) Gate Voltage t d(on) rain Current 9% rain Voltage 9% t r t f 5% 1% 5% 1% Switching Energy rain Voltage Switching Energy rain Current Figure 18, Turn-on Switching Waveforms and efinitions Figure 19, Turn-off Switching Waveforms and efinitions APT6F6 G.U.T. Figure 2, Inductive Switching Test Circuit SOT-227 (ISOTOP ) Package Outline 31.5 (1.24) 31.7 (1.248) 7.8 (.37) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48) 8.9 (.35) 9.6 (.378) Hex Nut M4 (4 places) r = 4. (.157) (2 places) 4. (.157) 4.2 (.165) (2 places) 25.2 (.992).75 (.3) 12.6 (.496) 25.4 (1.).85 (.33) 12.8 (.54) 3.3 (.129) 3.6 (.143) 1.95 (.77) 2.14 (.84) 14.9 (.7) * Source rain 15.1 (.594) 3.1 (1.185) * Source terminals are shorted 3.3 (1.193) internally. Current handling 38. (1.496) capability is equal for either 38.2 (1.54) Source terminal. * Source Gate imensions in Millimeters and (Inches) ISOTOP is a Registered Trademark of SGS Thomson. APT s products are covered by one or more of U.S.patents 4,895,81 5,45,93 5,89,434 5,182,234 5,19,522 5,262,336 6,53,786 5,256,3 4,748,13 5,283,22 5,231,474 5,434,95 5,528, and foreign patents. US and Foreign patents pending. All Rights Reserved Rev B 9-24