DFP50N06. N-Channel MOSFET

Transcription

1 N-Channel MOSFET Features R DS(on) (Max.22 )@ =1V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 1% Avalanche Tested 1.Gate 2.Drain 3.Source BS = 6V R DS(ON) =.22 ohm = 5A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control, ups,audio amplifier. Also, especially designed to minimize rds(on), low gate charge and high rugged avalanche characteristics. TO Absolute Maximum Ratings Symbol Parameter Value Units S Drain to Source Voltage 6 V Continuous Drain Current(@T C = 1 C) 38 A Continuous Drain Current(@T C = 25 C) 5 A M Drain Current Pulsed (Note 1) 2 A Gate to Source Voltage ±25 V E AS Single Pulsed Avalanche Energy (Note 2) 642 mj E AR Repetitive Avalanche Energy (Note 1) 12 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 7. V/ns P D Total Power Dissipation(@T C = 25 C) 12 W Derating Factor above 25 C.8 W/ C T STG, T J Operating Junction Temperature & Storage Temperature - 55 ~ 175 C T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 3 C Thermal Characteristics Symbol Parameter Value Min. Typ. Max. Units R θjc Thermal Resistance, Junction-to-Case C/W R θcs Thermal Resistance, Case to Sink C/W R θja Thermal Resistance, Junction-to-Ambient C/W May, 25. Rev.1. 1/7

2 Electrical Characteristics ( T C = 25 C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = V, = 25uA V BS / T J SS Breakdown Voltage Temperature coefficient Drain-Source Leakage Current = 25uA, referenced to 25 C V/ C = 6V, = V ua = 48V, T C = 125 C ua I GSS Gate-source Leakage, Reverse = -25V, = V na Gate-Source Leakage, Forward = 25V, = V na On Characteristics (th) Gate Threshold Voltage =, = 25uA V R DS(ON) Static Drain-Source On-state Resistance =1 V, = 25A Dynamic Characteristics C iss Input Capacitance C oss Output Capacitance = V, =25V, f = 1MHz pf C rss Reverse Transfer Capacitance - 9 Dynamic Characteristics t d(on) Turn-on Delay Time t r Rise Time =3V, =25A, R G = t d(off) Turn-off Delay Time see fig. 13. (Note 4, 5) ns t f Fall Time Q g Total Gate Charge Q gs Gate-Source Charge =16V, =1V, =9A nc Q gd Gate-Drain Charge(Miller Charge) see fig. 12. (Note 4, 5) Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. I S Continuous Source Current Integral Reverse p-n Junction I SM Pulsed Source Current Diode in the MOSFET A V SD Diode Forward Voltage I S =5A, =V V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge I S =5A, =V, di F /dt=1a/us uc NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L =3uH, I AS = 5A, = 25V, R G = 5, Starting T J = 25 C 3. I SD 5A, di/dt 3A/us, BS, Starting T J = 25 C 4. Pulse Test : Pulse Width 3us, Duty Cycle 2% 5. Essentially independent of operating temperature. 2/7

3 Fig 1. On-State Characteristics Fig 2. Transfer Characteristics [ V ] Top Bottom Pulse Test 2. T C = [V], Drain to Source Voltage Id [ ] 125[ ] -55[ ] = 3 [ V ] 25 Pulse Test Vgs[ v ], Gate-Source Voltage Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature 7 R DS(ON) [mω ] Drain to Source on Resistance =1[V] =2[V] 1 T J = Fig 5. Capacitance Characteristics R [ A ], Reverse Drain Current Tj=175 o C Tj=25 o C = V 25 Pulse Test Vsd[ V ], Source-Drain Voltage Fig 6. Gate Charge Characteristics Capcitance [ pf ] C oss C iss C rss 1. C iss = C gs + C gd (C ds = shorted) 2. C Oss = C ds + C gd 3. C rss = C gd [ V ], Drain to Source Voltage 1. = [V] 2. Frequency = 1[MHz] [ V ], Gate to Source Voltage[V] = 3V =12V = 48V 2 = 5A Gate Charge [nc] 3/7

4 1.2 Fig 7. Breadown Voltage variation vs. Temperature 3. Fig 8. On Resistance variation vs. Temperature BS [ V ], Breakdown Voltage = V 2. = Temperature [ ] Rds(on),(Normalized) Drain-Source On-Resistance Vgs = 1V 2. Id = 25A Tj, Junction temperature[ o C] Fig 9. Maximum Safe Operating Area Fig 1. Maximum Drain Current vs. Case Temperature Operating Area limited by R DS(ON) DC 1ms 1ms 1us Case 175 Junction Temp.@ 25 Single Pulse See Figure [ V ], Drain to source Voltage Temperature[ ] Fig 11. Transient Thermal Response Curve Z Θ JC (t), Thermal Impedance 1-1 t 1 t 2 P DM <Note> 1. Z Θ JC (t) = 1.25 /W M ax. 2. Duty Factor, D=t 1 /t 2 3. Z Θ JC (t) = (T JM - T C )/P D t 1 [ sec ], S quare W ave P ulse D uration 4/7

5 Fig. 12. Gate Charge Test Circuit & Waveforms 12V 2nF 5KO Same Type as Q g 3nF Q gs Q gd 1mA Charge Fig 13. Switching Time Test Circuit & Waveforms R L (.5 rated ) 9% 1V Pulse Generator R G V in 1% t d(on) t r t d(off) t f t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L BS I AS 1 2 E AS = L L I AS 2 BS BS - 1V R G (t) (t) t p Time 5/7

6 Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms + _ I S L Driver R G Same Type as dv/dt controlled by RG I S controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 1V I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop 6/7

7 TO-22 Package Dimension Dim. mm Inch Min. Typ. Max. Min. Typ. Max. A B C D E F G H I J K L M N O P Gate 2. Drain 3. Source 7/7