TO-261 G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 500 V. Symbol Parameter Max SLB830S SLI830S R θjc
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1 LB830 / LI V N-Channel MOFET eneral Description This Power MOFET is produced using Maple semi s advanced planar stripe DMO technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 5.0A, 500V, R D(on) = 1.35Ω@ = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D TO-262 TO-261 D Absolute Maximum Ratings T C = 25 C unless otherwise noted ymbol Parameter LB830 LI830 Units Drain-ource Voltage 500 V I D Drain Current - Continuous (T C = 25 ) 5.0 A - Continuous (T C = 100 ) 3.0 A I DM Drain Current - Pulsed (Note 1) 20 A ate-ource Voltage ±30 V EA ingle Pulsed Avalanche Energy (Note 2) 280 mj I AR Avalanche Current (Note 1) 5.0 A E AR Repetitive Avalanche Energy (Note 1) -- mj dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P D Power Dissipation (T C = 25 ) 74 W T J, T T Operating and torage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 Thermal Characteristics ymbol Parameter Max LB830 LI830 Units R θjc Thermal Resistance, Junction-to-Case /W R θj Thermal Resistance, Case-to-ink Typ /W R θja Thermal Resistance, Junction-to-Ambient /W
2 Electrical Characteristics T C = 25 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics B Drain-ource Breakdown Voltage = 0 V, I D = 250 ua V B Breakdown Voltage Temperature / T J Coefficient I D I F Zero ate Voltage Drain Current ate-body Leakage Current, Forward I D = 250 ua, Referenced to V/ = 500 V, = 0 V ua = 400 V, T C = ua = 30 V, = 0 V na I R ate-body Leakage Current, Reverse = -30 V, = 0 V na On Characteristics (th) ate Threshold Voltage =, I D = 250 ua V R D(on) tatic Drain-ource On-Resistance = 10 V, I D = 2.0 A Ω g F Forward Transconductance = 40 V, I D = 2.0 A (Note 4) Dynamic Characteristics C iss Input Capacitance pf C oss Output Capacitance = 25 V, = 0 V, f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf witching Characteristics t d(on) Turn-On Delay Time ns t r Turn-On Rise Time = 250 V, I D = 5.0 A, ns R = 25 Ω t d(off) Turn-Off Delay Time ns (Note 4, 5) t f Turn-Off Fall Time ns Q g Total ate Charge = 480 V, I D = 4.0A, nc Q gs ate-ource Charge = 10 V nc Q gd ate-drain Charge (Note 4, 5) nc Drain-ource Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-ource Diode Forward Current A I M Maximum Pulsed Drain-ource Diode Forward Current A V D Drain-ource Diode Forward Voltage = 0 V, I = 4.0 A V t rr Reverse Recovery Time = 0 V, I = 4.0 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/us (Note 4) uc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I A = 5.0A,L=24mH, = 50V, R = 25Ω, tarting T J = 25 C 3. I D 5.0A, di/dt 200A/us, B, tarting T J = 25 C 4. Pulse Test : Pulse width 300us, Duty cycle 2% 5. Essentially independent of operating temperature
3 Typical Characteristics Figure 1. Typical Output Characteristics Tc=25 Figure 2. Typical Output Characteristics Tc=150 Figure 3. Normalized Resistance V Temperature Figure 4. Typical ource-drain Diode Forward Voltage Figure 5. Maximum Current V Case Temperature Figure 6. Maximum afe Operating Area
4 12V Current Regulator 50KΩ 200nF V ate Charge Test Circuit & Waveform 300nF ame Type as Q gs Q g Q gd 3mA R 1 R 2 Current ampling (I ) Resistor Current ampling (I D ) Resistor Charge Resistive witching Test Circuit & Waveforms R L V in V out ( 0.5 rated ) V out 90% R V in 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive witching Test Circuit & Waveforms L L 1 E A = ---- L L I 2 A 2 B B -- Vary t p to obtain required peak I D I D B I A R C I D (t) (t) t p t p Time
5 Peak Diode Recovery dv/dt Test Circuit & Waveforms + I -- L Driver R ame Type as dv/dt controlled by by 밨R IID controlled by by Duty pulse Factor period밆? ( Driver ) D = ate Pulse Width ate Pulse Period I FM, Body Diode Forward Current I ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
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