FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C

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1 APT2M11JFLL 2V A.11Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q g. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. G S ISOTOP D S SOT-227 "UL Recognized" Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS Increased Power Dissipation Easier To Drive Popular SOT-227 Package FAST RECOVERY BODY DIODE All Ratings: T C = 25 C unless otherwise specified. G D S Symbol Parameter APT2M11JFLL S Drain-Source Voltage 2 M Continuous Drain T C = 25 C Pulsed Drain Current 1 74 M Gate-Source Voltage Continuous Gate-Source Voltage Transient ±3 ±4 P D Total Power T C = 25 C Linear Derating Factor Watts W/ C,T STG T L Operating and Storage Junction Temperature Range Lead Temperature:.63" from Case for 1 Sec. -55 to 15 3 C I AR Avalanche Current 1 (Repetitive and Non-Repetitive) E AR E AS Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy mj STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BS Drain-Source Breakdown Voltage ( = V, = 25µA) 2 R DS(on) Drain-Source On-State Resistance 2 ( = 1V, = 88A) SS I GSS (th) Zero Gate Voltage Drain Current ( = 2V, = V) Zero Gate Voltage Drain Current ( = 16V, = V, T C = 125 C) Gate-Source Leakage Current ( = ±3V, = V) Gate Threshold Voltage ( =, = 5mA) ±1 3 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - Ohms µa na Rev C 9-24

2 DYNAMIC CHARACTERISTICS Symbol Characteristic C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Q g Total Gate Charge 3 Q gs Gate-Source Charge Q gd Gate-Drain ("Miller") Charge t d(on) Turn-on Delay Time t r Rise Time t d(off) Turn-off Delay Time t f Fall Time Turn-on Switching Energy 6 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions I S Continuous Source Current (Body Diode) I SM Pulsed Source Current 1 (Body Diode) V SD Diode Forward Voltage 2 ( = V, I S = -A) Peak Diode Recovery dv / 5 dt dv / dt t rr Q rr I RRM THERMAL CHARACTERISTICS Symbol Characteristic R θjc Junction to Case Junction to Ambient R θja.2 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Reverse Recovery Time (I S = -A, di / dt = 1A/µs) Reverse Recovery Charge (I S = -A, di / dt = 1A/µs) Peak Recovery Current (I S = -A, di / dt = 1A/µs) 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 38 µs, Duty Cycle < 2% 3 See MIL-STD-75 Method 3471 Test Conditions = V = 25V f = 1 MHz = 1V = 1V = 25 C RESISTIVE SWITCHING = 1V = 25 C R G =.6Ω INDUCTIVE 25 C = 133V, = A, R G = 5Ω INDUCTIVE 125 C = 133V, = A, R G = 5Ω APT Reserves the right to change, without notice, the specifications and inforation contained herein. APT2M11JFLL T j = 25 C 25 T j = 125 C 5 T j = 25 C.9 T j = 125 C 2.5 T j = 25 C 12 T j = 125 C V/ns ns µc C/W 4 Starting T j = +25 C, L =.23mH, R G = 25Ω, Peak I L = A 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. I S - A di / dt 7A/µs V R S 15 C 6 Eon includes diode reverse recovery. See figures 18, 2. pf nc ns µj Rev C 9-24 Z θjc, THERMAL IMPEDANCE ( C/W) RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Note: P DM t 1 t 2 Duty Factor D = t 1/t 2 Peak = P DM x Z θjc + T C

3 Typical Performance Curves R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Junction temp. ( C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL > (ON) x R DS(ON) MAX. 25µSEC. PULSE <.5 % DUTY CYCLE = +125 C = +25 C = -55 C APT2M11JFLL 5.5V FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS , GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R DS(ON) vs DRAIN CURRENT T C, CASE TEMPERATURE ( C), JUNCTION TEMPERATURE ( C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE Power (watts) Case temperature. ( C) I = 88A D V = 1 RC MODEL F.765F 23.5F , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 8, R DS(ON) vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE (TH), THRESHOLD VOLTAGE BS, DRAIN-TO-SOURCE BREAKDOWN R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VOLTAGE (NORMALIZED) =15 &1V 8V NORMALIZED TO = = 88A =1V 7.5V 7V =2V 6.5 6V Rev C 9-24

4 5-742 Rev C 9-24, GATE-TO-SOURCE VOLTAGE (VOLTS) SWITCHING ENERGY (µj) t d(on) and t d(off) (ns) APT2M11JFLL 5 1mS 1 Crss 5 T C =+25 C =+15 C 1mS SINGLE PULSE FIGURE 1, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE OPERATION HERE LIMITED BY R DS (ON) = A =1V =4V =16V 1µS Q g, TOTAL GATE CHARGE (nc) V SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE V = 13V L = 1µH t d(off) t d(on) R, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pf) 3, 1, 1, =+15 C V = 13V L = 1µH =+25 C (A) (A) FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT V = 13V L = 1µH E ON includes diode reverse recovery (A) R G, GATE RESISTANCE (Ohms) FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE SWITCHING ENERGY (µj) t r and t f (ns) V = 13V I = A D L = 1µH E ON includes diode reverse recovery. t f t r Eon Ciss Coss

5 Typical Performance Curves APT2M11JFLL 9% 1% Gate Voltage 125 C t d(off) Gate Voltage 125 C t d(on) t r Drain Current 9% Drain Voltage 9% t f 5% 1% 5% 1% Switching Energy Drain Voltage Switching Energy Drain Current Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT2X11D2 G D.U.T. Figure 2, Inductive Switching Test Circuit SOT-227 (ISOTOP ) Package Outline 31.5 (1.24) 31.7 (1.248) 7.8 (.37) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48) 8.9 (.35) 9.6 (.378) Hex Nut M4 (4 places) r = 4. (.157) (2 places) 4. (.157) 4.2 (.165) (2 places) 25.2 (.992).75 (.3) 12.6 (.496) 25.4 (1.).85 (.33) 12.8 (.54) 3.3 (.129) 3.6 (.143) 1.95 (.77) 2.14 (.84) 14.9 (.587) * Source Drain 15.1 (.594) 3.1 (1.185) * Source terminals are shorted 3.3 (1.193) internally. Current handling 38. (1.496) capability is equal for either 38.2 (1.54) Source terminal. * Source Gate Dimensions in Millimeters and (Inches) ISOTOP is a Registered Trademark of SGS Thomson. APT s products are covered by one or more of U.S.patents 4,895,81 5,45,93 5,89,434 5,182,234 5,19,522 5,262,336 6,53,786 5,256,583 4,748,13 5,283,22 5,231,474 5,434,95 5,528,58 and foreign patents. US and Foreign patents pending. All Rights Reserved Rev C 9-24

MOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA)

MOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA) APT2M11JLL 2V A.11Ω POWER MOS 7 R Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement

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