FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C
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- Reginald Allison
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1 APT2M11JFLL 2V A.11Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q g. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. G S ISOTOP D S SOT-227 "UL Recognized" Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS Increased Power Dissipation Easier To Drive Popular SOT-227 Package FAST RECOVERY BODY DIODE All Ratings: T C = 25 C unless otherwise specified. G D S Symbol Parameter APT2M11JFLL S Drain-Source Voltage 2 M Continuous Drain T C = 25 C Pulsed Drain Current 1 74 M Gate-Source Voltage Continuous Gate-Source Voltage Transient ±3 ±4 P D Total Power T C = 25 C Linear Derating Factor Watts W/ C,T STG T L Operating and Storage Junction Temperature Range Lead Temperature:.63" from Case for 1 Sec. -55 to 15 3 C I AR Avalanche Current 1 (Repetitive and Non-Repetitive) E AR E AS Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy mj STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BS Drain-Source Breakdown Voltage ( = V, = 25µA) 2 R DS(on) Drain-Source On-State Resistance 2 ( = 1V, = 88A) SS I GSS (th) Zero Gate Voltage Drain Current ( = 2V, = V) Zero Gate Voltage Drain Current ( = 16V, = V, T C = 125 C) Gate-Source Leakage Current ( = ±3V, = V) Gate Threshold Voltage ( =, = 5mA) ±1 3 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - Ohms µa na Rev C 9-24
2 DYNAMIC CHARACTERISTICS Symbol Characteristic C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Q g Total Gate Charge 3 Q gs Gate-Source Charge Q gd Gate-Drain ("Miller") Charge t d(on) Turn-on Delay Time t r Rise Time t d(off) Turn-off Delay Time t f Fall Time Turn-on Switching Energy 6 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions I S Continuous Source Current (Body Diode) I SM Pulsed Source Current 1 (Body Diode) V SD Diode Forward Voltage 2 ( = V, I S = -A) Peak Diode Recovery dv / 5 dt dv / dt t rr Q rr I RRM THERMAL CHARACTERISTICS Symbol Characteristic R θjc Junction to Case Junction to Ambient R θja.2 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Reverse Recovery Time (I S = -A, di / dt = 1A/µs) Reverse Recovery Charge (I S = -A, di / dt = 1A/µs) Peak Recovery Current (I S = -A, di / dt = 1A/µs) 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 38 µs, Duty Cycle < 2% 3 See MIL-STD-75 Method 3471 Test Conditions = V = 25V f = 1 MHz = 1V = 1V = 25 C RESISTIVE SWITCHING = 1V = 25 C R G =.6Ω INDUCTIVE 25 C = 133V, = A, R G = 5Ω INDUCTIVE 125 C = 133V, = A, R G = 5Ω APT Reserves the right to change, without notice, the specifications and inforation contained herein. APT2M11JFLL T j = 25 C 25 T j = 125 C 5 T j = 25 C.9 T j = 125 C 2.5 T j = 25 C 12 T j = 125 C V/ns ns µc C/W 4 Starting T j = +25 C, L =.23mH, R G = 25Ω, Peak I L = A 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. I S - A di / dt 7A/µs V R S 15 C 6 Eon includes diode reverse recovery. See figures 18, 2. pf nc ns µj Rev C 9-24 Z θjc, THERMAL IMPEDANCE ( C/W) RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Note: P DM t 1 t 2 Duty Factor D = t 1/t 2 Peak = P DM x Z θjc + T C
3 Typical Performance Curves R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Junction temp. ( C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL > (ON) x R DS(ON) MAX. 25µSEC. PULSE <.5 % DUTY CYCLE = +125 C = +25 C = -55 C APT2M11JFLL 5.5V FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS , GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R DS(ON) vs DRAIN CURRENT T C, CASE TEMPERATURE ( C), JUNCTION TEMPERATURE ( C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE Power (watts) Case temperature. ( C) I = 88A D V = 1 RC MODEL F.765F 23.5F , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 8, R DS(ON) vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE (TH), THRESHOLD VOLTAGE BS, DRAIN-TO-SOURCE BREAKDOWN R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VOLTAGE (NORMALIZED) =15 &1V 8V NORMALIZED TO = = 88A =1V 7.5V 7V =2V 6.5 6V Rev C 9-24
4 5-742 Rev C 9-24, GATE-TO-SOURCE VOLTAGE (VOLTS) SWITCHING ENERGY (µj) t d(on) and t d(off) (ns) APT2M11JFLL 5 1mS 1 Crss 5 T C =+25 C =+15 C 1mS SINGLE PULSE FIGURE 1, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE OPERATION HERE LIMITED BY R DS (ON) = A =1V =4V =16V 1µS Q g, TOTAL GATE CHARGE (nc) V SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE V = 13V L = 1µH t d(off) t d(on) R, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pf) 3, 1, 1, =+15 C V = 13V L = 1µH =+25 C (A) (A) FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT V = 13V L = 1µH E ON includes diode reverse recovery (A) R G, GATE RESISTANCE (Ohms) FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE SWITCHING ENERGY (µj) t r and t f (ns) V = 13V I = A D L = 1µH E ON includes diode reverse recovery. t f t r Eon Ciss Coss
5 Typical Performance Curves APT2M11JFLL 9% 1% Gate Voltage 125 C t d(off) Gate Voltage 125 C t d(on) t r Drain Current 9% Drain Voltage 9% t f 5% 1% 5% 1% Switching Energy Drain Voltage Switching Energy Drain Current Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT2X11D2 G D.U.T. Figure 2, Inductive Switching Test Circuit SOT-227 (ISOTOP ) Package Outline 31.5 (1.24) 31.7 (1.248) 7.8 (.37) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48) 8.9 (.35) 9.6 (.378) Hex Nut M4 (4 places) r = 4. (.157) (2 places) 4. (.157) 4.2 (.165) (2 places) 25.2 (.992).75 (.3) 12.6 (.496) 25.4 (1.).85 (.33) 12.8 (.54) 3.3 (.129) 3.6 (.143) 1.95 (.77) 2.14 (.84) 14.9 (.587) * Source Drain 15.1 (.594) 3.1 (1.185) * Source terminals are shorted 3.3 (1.193) internally. Current handling 38. (1.496) capability is equal for either 38.2 (1.54) Source terminal. * Source Gate Dimensions in Millimeters and (Inches) ISOTOP is a Registered Trademark of SGS Thomson. APT s products are covered by one or more of U.S.patents 4,895,81 5,45,93 5,89,434 5,182,234 5,19,522 5,262,336 6,53,786 5,256,583 4,748,13 5,283,22 5,231,474 5,434,95 5,528,58 and foreign patents. US and Foreign patents pending. All Rights Reserved Rev C 9-24
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More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationHFI50N06A / HFW50N06A 60V N-Channel MOSFET
HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
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N-Channel MOSFET Features R DS(on) (Max.22 )@ =1V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 1% Avalanche Tested 1.Gate 2.Drain 3.Source BS = 6V R DS(ON) =.22 ohm = 5A General
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500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
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General Description The MDP193 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP193 is suitable
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC s advanced technology to provide customers with high switching speed
More informationMDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω
MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
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PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationTYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C)
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More information= 25 C = 100 C = 150 C. Watts T J = 0V, I C. = 500µA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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FQPF7N60 FQPF7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
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