Watts P D Linear Derating Factor W/ C T J = 0V, I D. (ON) Max, V GS = 12V, 24.5A) = 600v, V GS = 0V) = 480V, V GS = 0V, T C = ±30V, V DS = 0V)
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1 APL62B2(G) APL62L(G) 6V A.125Ω LINEAR MOSFET B2 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>1 msec). T-MAX TO-264 L Higher FBSOA Popular T-MAX or TO-264 Package Higher Power Dissipation G D S MAXIMUM RATINGS All Ratings: T C = 25 C unless otherwise specified. Parameter APL62B2-L(G) S -Source Voltage 6 M Continuous T C = 25 C Pulsed Current M Gate-Source Voltage Continuous Gate-Source Voltage Transient ±3 ± Total Power T C = 25 C 73 Watts P D Linear Derating Factor 5.84 W/ C,T STG T L Operating and Storage Junction Temperature Range Lead Temperature:.63" from Case for 1 Sec. -55 to 15 3 C I AR Avalanche Current 1 (Repetitive and Non-Repetitive) E AR E AS Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy mj STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number BS -Source Breakdown Voltage ( = V, = 25 µa) 6 (ON) On State Current 2 ( > (ON) x R DS (ON) Max, = 12V) R DS (ON) -Source On-State Resistance 2 ( = 12V, 24.5A).125 Ohms SS Zero Gate Voltage Current ( = 6v, = V) Zero Gate Voltage Current ( = 48V, = V, T C = 125 C) µa I GSS Gate-Source Leakage Current ( = ±3V, = V) ±1 na (TH) Gate Threshold Voltage ( =, = 2.5mA) 2 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website Rev E 8-23
2 DYNAMIC CHARACTERISTICS APL62B2-L(G) Characteristic Test Conditions C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance = V = 25V f = 1 MHz pf t d (on) t r t d (off) t f Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time = 15V V DD = 3V = 25 C R G =.6Ω ns THERMAL CHARACTERISTICS Characteristic R θjc R θja Junction to Case Junction to Ambient.17 C/W 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-75 Method 3471 temperature. 4 Starting T j = +25 C, L = 2.5mH, R G = 25Ω, Peak I L = A 2 Pulse Test: Pulse width < 38 µs, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein..18 Z ΘJC, THERMAL IMPEDANCE ( C/W) SINGLE PULSE Note: P DM t 1 t 2 Duty Factor D = t 1/t 2 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Junction temp. ( C) Power (Watts) RC MODEL F Rev E F Case temperature FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL
3 Typical Performance Curves 12 =1V, 15 V 12 =1, 15V APL62B2-L Rev E V 7 V 6.5 V 6 V 5.5 V FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS 8 6 > (ON) x R DS (ON)MAX. 25µSEC. PULSE <.5 % DUTY CYCLE 8 V 8 V BS (ON), DRAIN-TO-SOURCE BREAKDOWN R DS (ON), DRAIN-TO-SOURCE ON RESISTANCE VOLTAGE NORMALIZED TO = 29A =1V.9 2 = +125 C = -55 C.8 =2V = +25 C , GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R DS (ON) vs DRAIN CURRENT T C, CASE TEMPERATURE ( C), JUNCTION TEMPERATURE ( C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE V 7 V 6.5 V 6 V 5.5 V
4 R DS (ON), DRAIN-TO-SOURCE ON RESISTANCE , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE I = 24.5A D V = 12 OPERATION HERE LIMITED BY R DS (ON) 1µS 1mS 1mS 1mS T C =+25 C =+15 C SINGLE PULSE.1 DC Line FIGURE 1, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE C, CAPACITANCE (pf) (TH), THRESHOLD VOLTAGE , 1, 5, 1, 5 Ciss Coss Crss APL62B2-L T-MAX TM (B2) Package Outline TO-264 (L) Package Outline 4.69 (.185) 5.31 (.29) 1. (.59) 2. (.98) 15. (.61) (.6) 5.38 (.212) 6.2 (.244) 4.6 (.181) 5.21 (.25) 1.8 (.71) 2.1 (.79) (.768) 2.5 (.87) 3.1 (.122) 3.48 (.137) 2.8 (.819) (.845) (1.3) 26. (1.43) 5.79 (.228) 6.2 (.244) Rev E (.16).79 (.31) 4.5 (.177) Max (.78) 2.32 (.8) 1.1 (.) 1. (.55) 2.21 (.87) 2.59 (.12) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 2.87 (.113) 3.12 (.123) 1.65 (.65) 2.13 (.84) Gate Source 2.29 (.9) 2.69 (.16) (.78) (.842).48 (.19).76 (.3).84 (.33) 1.3 (.51) 2.59 (.12) 2.79 (.11) 3. (.118) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.29 (.9) 2.69 (.16) Gate Source
5 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microsemi: APL62LG APL62B2G
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationMDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ
General Description The MDP193 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP193 is suitable
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GSS ±20 V T C=25 o C (Silicon Limited)
General Description The MDU4N uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU4N is suitable device
More informationMDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω
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TSM9ND5CI N-Channel Power MOSFET 5V, 9A,.9Ω FEATURES % UIS and Rg tested Advanced planar process Compliant to RoHS Directive /65/EU and in accordance to WEEE /96/EC Halogen-free according to IEC 649--
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More information1200V 60A APT60D120B APT60D120S APT60D120BG* APT60D120SG* ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT BENEFITS
V 6A APT6DB APT6DS APT6DBG* APT6DSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters
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More informationT C =25 unless otherwise specified
800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate
More information= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2
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More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
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HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 80V 73m:@ = 0V 3.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
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Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
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Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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