Thunderbolt IGBT G E

Transcription

1 TYPICAL PERFORMANCE CURVES 6V APT1GT6JR APT1GT6JR The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop Thunderbolt IGBT High Freq. Switching to 8KHz G E ISOTOP C E SOT-227 "UL Recognized" file # E Low Tail Current Ultra Low Leakage Current C RBSOA and SCSOA Rated G E MAXIMUM RATINGS All Ratings: T C unless otherwise specifi ed. Parameter APT1GT6JR UNIT S Collector-Emitter Voltage Gate-Emitter Voltage 6 ±3 Volts 1 Continuous Collector T C Continuous Collector T C = 1 C 8 Amps M Pulsed Collector Current 1 3 SSOA Switching Safe Operating = 15 C 6V P D Total Power Dissipation 5 Watts,T STG T L Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering:.63" from Case for 1 Sec. -55 to 15 3 C STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN TYP MAX Units V (BR)CES Collector-Emitter Breakdown Voltage ( = V, = 4mA) 6 (TH) (ON) ES I GES Gate Threshold Voltage ( =, = 1.5mA, T j ) Collector-Emitter On Voltage (, = 1A, T j ) Collector-Emitter On Voltage (, = 1A, T j ) Collector Cut-off Current ( = 6V, = V, T j ) 2 Collector Cut-off Current ( = 6V, = V, T j ) 2 Gate-Emitter Leakage Current ( = ±3V) TBD 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Volts µa na Rev B 7-21

2 DYNAMIC CHARACTERISTICS APT1GT6JR Characteristic Test Conditions MIN TYP MAX UNIT C ies C oes C res P Q g Q ge Q gc SSOA Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Switching Safe Operating Area Capacitance = V, = 25V f = 1 MHz Gate Charge = 3V = 1A = 15 C,, = 15V, L = 1µH, = 6V pf V nc A t d(on) t r t d(off) t f E on1 E on2 E off t d(on) t r t d(off) t f E on1 E on2 E off Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy 66 Inductive Switching (25 C) V CC = 4V = 1A = +25 C Inductive Switching (125 C) V CC = 4V = 1A = +125 C ns µj ns µj THERMAL AND MECHANICAL CHARACTERISTICS Characteristic MIN TYP MAX UNIT R θjc R θjc W T Junction to Case (IGBT) Junction to Case (DIODE) Package Weight N/A C/W gm V Isolation RMS Voltage (5-6hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 25 Volts Rev B Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I ces includes both IGBT and FRED leakages 3 See MIL-STD-75 Method E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode. 5 E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) Microsemi Reserves the right to change, without notice, the specifications and information contained herein.

3 TYPICAL PERFORMANCE CURVES V GS(TH), THRESHOLD VOLTAGE, COLLECTOR-TO-EMITTER VOLTAGE (V) (NORMALIZED), DC COLLECTOR CURRENT(A), COLLECTOR-TO-EMITTER VOLTAGE (V), GATE-TO-EMITTER VOLTAGE (V) APT1GT6JR 2 3 V = 15 12, 13, &15V 18 1V V T 2 C 12 T C V T C = -55 C 1 7V 5 6V , COLLECTER-TO-EMITTER VOLTAGE (V), COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics( ) FIGURE 2, Output Characteristics ( ) µs PULSE I = 1A TEST<.5 % DUTY C T 18 CYCLE J 14 = -55 C 16 = 12V = 3V = 48V , GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nc) FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge = 2A 25µs PULSE TEST <.5 % DUTY CYCLE 3.5 = 2A = 1A = 1A = 5A = 5A V.5.5 GE. 25µs PULSE TEST <.5 % DUTY CYCLE , GATE-TO-EMITTER VOLTAGE (V), Junction Temperature ( C) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature Rev B 7-21

4 35 45 APT1GT6JR Rev B 7-21 SWITCHING ENERGY LOSSES (µj) E ON2, TURN ON ENERGY LOSS (µj) t r, RISE TIME (ns) t d(on), TURN-ON DELAY TIME (ns) , L = 1µH, = 4V SWITCHING ENERGY LOSSES (µj) E OFF, TURN OFF ENERGY LOSS (µj) t f, FALL TIME (ns) t d (OFF), TURN-OFF DELAY TIME (ns) =15V, =25 C =15V, =125 C 15 1 = 4V 1 5 T = 4V J, or 125 C R G 5 L = 1µH L = 1µH E E FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 1, Turn-Off Delay Time vs Collector Current E E FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current = 4V E E FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current = 4V 2A = 25 or 125 C, 1A 5A 2A 1A, L = 1µH, = 4V = 4V,, 5A E on2, 5A , GATE RESISTANCE (OHMS), JUNCTION TEMPERATURE ( C) FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature = 4V 2A 1A 5A 2A 1A

5 TYPICAL PERFORMANCE CURVES 1, 35 APT1GT6JR C, CAPACITANCE ( P F) 5, 1, 5 C ies C es C res , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS), COLLECTOR TO EMITTER VOLTAGE Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area.3 Z θjc, THERMAL IMPEDANCE ( C/W) t SINGLE PULSE Duty Factor D = t1 /t 2 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t 1 1 Dissipated Power (Watts) ( C) T C ( C) Z EXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL Z EXT F MAX, OPERATING FREQUENCY (khz) Rev B D = 5 % = 4V T C = 1 C T C = 75 C Figure 2, Operating Frequency vs Collector Current F max = min (f max, f max2 ).5 f max1 = t d(on) + t r + t d(off) + t f f max2 = P diss = P diss - P cond E on2 + E off - T C R θjc

6 APT1GT6JR APT1DQ6 1% Gate Voltage t d(on) V CC t r 9% Collector Current 5% 1% 5% A CollectorVoltage D.U.T. Switching Energy Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 9% Gate Voltage t d(off) 9% CollectorVoltage t f 1% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions SOT-227 (ISOTOP ) Package Outline 31.5 (1.24) 31.7 (1.248) 7.8 (.37) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48) 8.9 (.35) 9.6 (.378) Hex Nut M4 (4 places) r = 4. (.157) (2 places) 4. (.157) 4.2 (.165) (2 places).75 (.3).85 (.33) 12.6 (.496) 12.8 (.54) 25.2 (.992) 25.4 (1.) Rev B (.587) 15.1 (.594) 3.1 (1.185) 3.3 (1.193) 38. (1.496) 38.2 (1.54) 3.3 (.129) 3.6 (.143) 1.95 (.77) 2.14 (.84) * Emitter Collector * Emitter Dimensions in Millimeters and (Inches) * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. Microsemi s products are covered by one or more of U.S. patents 4,895,81 5,45,93 5,89,434 5,182,234 5,19,522 5,262,336 6,53,786 5,256,583 4,748,13 5,283,22 5,231,474 5,434,95 5,528,58 6,939,743, 7,352,45 5,283,21 5,81,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. Gate

7 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microsemi: APT1GT6JR