CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Transcription

1 V A Thunderbolt IGBT & FRED The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT combined with an APT free-wheeling ultrafast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. TO-247 Low Forward Voltage Drop High Freq. Switching to KHz Low Tail Current Ultra Low Leakage Current RBSOA and SCSOA Rated Ultrafast Soft Recovery Antiparallel Diode G C E G C E MAXIMUM RATINGS (IGBT) All Ratings: T C = 2 C unless otherwise specified. Parameter V CES Collector-Emitter Voltage V CGR Collector-Gate Voltage (R GE = KΩ) Volts V GE Gate Emitter Voltage ± I C Continuous Collector T C = 2 C I C2 I CM Continuous Collector T C = 9 C Pulsed Collector T C = 2 C Amps I LM RBSOA Clamped Inductive Load Current R G = Ω T C = 2 C P D Total Power Dissipation 98 Watts T J,T STG T L Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering:.63" from Case for Sec. - to C STATIC ELECTRICAL CHARACTERISTICS (IGBT) Characteristic / Test Conditions BV CES Collector-Emitter Breakdown Voltage (V GE = V, I C = 2µA) V GE (TH) V CE (ON) Gate Threshold Voltage (V CE = V GE, I C = 7µA, T j = 2 C) Collector-Emitter On Voltage (,, T j = 2 C) Collector-Emitter On Voltage (,, T j = C) Volts I CES Collector Cut-off Current (V CE = V CES, V GE = V, T j = 2 C) Collector Cut-off Current (V CE = V CES, V GE = V, T j = C) 2 µa I GES Gate-Emitter Leakage Current (V GE = ±V, V CE = V) ± na CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - USA S.W. Columbia Street Bend, Oregon Phone: (4) FAX: (4) EUROPE Chemin de Magret F-337 Merignac - France Phone: (33) 7 92 FAX: (33)

2 DYNAMIC CHARACTERISTICS (IGBT) Characteristic Test Conditions C ies C oes C res Q g Q ge Q gc Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Capacitance V GE = V V CE = 2V f = MHz Gate Charge V CC =.V CES pf nc Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Resistive Switching (2 C) V CC =.66V CES R G = Ω ns Turn-on Delay Time E on E off Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 4 Turn-off Switching Energy Inductive Switching ( C) V CLAMP (Peak) =.66V CES R G = Ω T J = + C ns mj E ts Total Switching Losses E ts Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses 4 Inductive Switching (2 C) V CLAMP (Peak) =.66V CES R G = Ω T J = +2 C ns mj gfe Forward Transconductance V CE = V, 6 S THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Characteristic R ΘJC Junction to Case (IGBT) Junction to Case (FRED).63.9 C/W R ΘJA Junction to Ambient W T Package Weight oz gm Torque Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Leakages include the FRED and IGBT. 3 See MIL-STD-7 Method Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein.. lb in N m

3 C, CAPACITANCE (pf) I C, COLLECTOR CURRENT (AMPERES) I C, COLLECTOR CURRENT (AMPERES) V V Figure, Typical Output Characteristics (T J = 2 C) Figure 2, Typical Output Characteristics (T J = C) Figure 3, Typical Output Characteristics Figure 4, Typical Output 3,, f = MHz C ies C res... 8 Q g, TOTAL GATE CHARGE (nc) Figure, Typical Capacitance vs Collector-To-Emitter Voltage Figure 6, Gate Charges vs Gate-To-Emitter Voltage. 2µSec. Pulse Test V GE =, & 9V T C =- C T C =+2 C T C =+ C 8V 7V 6V C oes V GE, GATE-TO-EMITTER VOLTAGE (VOLTS) I C, COLLECTOR CURRENT (AMPERES) I C, COLLECTOR CURRENT (AMPERES) OPERATION LIMITED BY V CE (SAT) T C =+2 C T J =+ C SINGLE PULSE I C I C = = I C2 I C2 T J T= J = +2 C V GE =, & 9V V CE =V V CE =V 8V 7V 6V V CE =48V µs ms ms Z θjc, THERMAL IMPEDANCE ( C/W)..... D= SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t t 2 Duty Factor D = t /t 2 Peak T J = P DM x Z θjc + T C

4 4. TOTAL SWITCHING ENERGY LOSSES (mj) TOTAL SWITCHING ENERGY LOSSES (mj) BV CES, COLLECTOR-TO-EMITTER BREAKDOWN V CE (SAT), COLLECTOR-TO-EMITTER VOLTAGE (NORMALIZED) SATURATION VOLTAGE (VOLTS) I C I C2. I C T J, JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) Figure 8, Typical V CE (SAT) Voltage vs Junction Temperature Figure 9, Maximum Collector Current vs Case Temperature T J, JUNCTION TEMPERATURE ( C) R G, GATE RESISTANCE (OHMS) Figure, Breakdown Voltage vs Junction Temperature Figure, Typical Switching Energy Losses vs Gate Resistance I C I C2. I C T J, JUNCTION TEMPERATURE ( C) I C, COLLECTOR CURRENT (AMPERES) Figure 2, Typical Switching Energy Losses vs. Junction Temperature Figure 3, Typical Switching Energy Losses vs Collector Current V CC =.66 V CES V GE = +V R G = Ω.. F, FREQUENCY (KHz) Figure 4,Typical Load Current vs Frequency SWITCHING ENERGY LOSSES (mj) SWITCHING ENERGY LOSSES (mj) I C, COLLECTOR CURRENT (AMPERES) V CC =.66 V CES V GE = +V T J = +2 C V CC =.66 V CES V GE = +V T J = +2 C R G = Ω E off E on E off E on For Both: Duty Cycle = % T J = +2 C T sink = +9 C Gate drive as specified Power dissapation = W I LOAD = I RMS of fundamental

5 A V CHARGE *DRIVER SAME TYPE AS D.U.T. V CC =.66 V CES E ts = E on + E off B 9% % V C I C 9% 9% uh A I C V CLAMP V C B R G V C I C % D.U.T. V CE (SAT) % A DRIVER* D.U.T. E on t=2us E off Figure, Switching Loss Test Circuit and Waveforms 2 V CE (off) 9% V GE (on) V CC R L =. V CES I C2 2 D.U.T. % V GE (off) V CE (on) From Gate Drive Circuitry R G Figure 6, Resistive Switching Time Test Circuit and Waveforms MAXIMUM RATINGS (FRED) All Ratings: T C = 2 C unless otherwise specified. Characteristic GTBRD IF AV Maximum Average Forward Current (T C = C, Duty Cycle =.) IF RMS RMS Forward Current 7 Amps SM Non-Repetive Forward Surge Current (T J = 4 C, 8.3 ms) 3 STATIC ELECTRICAL CHARACTERISTICS (FRED) Characteristic / Test Conditions = A.8 V F L S Maximum Forward Voltage = A = A, T J = C Series Inductance (Lead to Lead mm from Base)..6 Volts nh

6 ` DYNAMIC CHARACTERISTICS (FRED) Characteristic/ Test Conditions r Reverse Recovery Time, =.A, di F /dt = -A/µs, V R = V, T J = 2 C 6 r2 Reverse Recovery Time T J = 2 C r3 = A, di F /dt = -2A/µs, V R = 3V T J = C 8 ns r Forward Recovery Time T J = 2 C r2 = A, di F /dt = 2A/µs, V R = 3V T J = C I RRM I RRM2 Reverse Recovery Current T J = 2 C = A, di F /dt = -2A/µs, V R = 3V T J = C 4 7. Amps Q rr Q rr2 Recovery Charge T J = 2 C = A, di F /dt = -2A/µs, V R = 3V T J = C nc V fr V fr2 Forward Recovery Voltage T J = 2 C = A, di F /dt = 2A/µs, V R = 3V T J = C Volts dim/dt Rate of Fall of Recovery Current T J = 2 C = A, di F /dt = -2A/µs, V R = 3V (See Figure 8) T J = C A/µs V r D.U.T. H r /Q rr Waveform +v v -v di F /dt Adjust PEARSON 4 CURRENT TRANSFORMER Figure 7, Diode Reverse Recovery Test Circuit and Waveforms - Forward Conduction Current di F /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. I RRM - Peak Reverse Recovery Current. Zero r - Reverse Recovery Time Measured from Point of Current Falling Through Zero to a Tangent Line { 6 dim/dt} Extrapolated Through Zero Defined by.7 and. I RRM. Q rr - Area Under the Curve Defined by I RRM and r. dim/dt - Maximum Rate of Current Change During the Trailing Portion of r. Figure 8, Diode Reverse Recovery Waveform and Definitions I RRM.7 I RRM Q rr = / 2 ( r. I RRM) 6

7 r, REVERSE RECOVERY TIME I RRM, REVERSE RECOVERY CURRENT, FORWARD CURRENT (nano-seconds) (AMPERES) (AMPERES) 8 T J = C V R = 3V T J = C V R = 3V A A T J = C A T J = - C r, FORWARD RECOVERY TIME K f, DYNAMIC PARAMETERS Q rr, REVERSE RECOVERY CHARGE (nano-seconds) (NORMALIZED) (nano-coulombs) T J = C V R = 3V V F, ANODE-TO-CATHODE VOLTAGE (VOLTS) di F /dt, CURRENT SLEW RATE (AMPERES/µSEC) Figure 9, Forward Voltage Drop vs Forward Current Figure, Reverse Recovery Charge vs Current Slew Rate A T J = 2 C A A di F /dt, CURRENT SLEW RATE (AMPERES/µSEC) T J, JUNCTION TEMPERATURE ( C) Figure 2, Reverse Recovery Current vs Current Slew Rate Figure 22, Dynamic Parameters vs Junction Temperature 8 I RRM T J = C V R = 3V = A 8 8 di F /dt, CURRENT SLEW RATE (AMPERES/µSEC) di F /dt, CURRENT SLEW RATE (AMPERES/µSEC) Figure 23, Reverse Recovery Time vs Current Slew Rate Figure 24, Forward Recovery Voltage/Time vs Current Slew Rate.. D=..2 T J = C r A V fr T fr Q rr A r Q rr A V fr, FORWARD RECOVERY VOLTAGE (VOLTS) Note: P DM t. SINGLE PULSE t 2 Duty Factor D = t /t 2 Peak T J = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 2, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

8 T-247 Package Outline 4.69 (.8).3 (.9).49 (.9) 2.49 (.98) 6. (.242) BSC.49 (.6) 6.26 (.6).38 (.22) 6. (.244) Collector (Cathode).8 (.89) 2.46 (.84) 3. (.38) 3.8 (.) 4. (.77) Max (.3) 3.2 (.23). (.6).79 (.3) 9.8 (.78).32 (.8). (.). (.) 2.2 (.87) 2.9 (.2).4 (.2) BSC 2-Plcs. Dimensions in Millimeters and (Inches).6 (.6) 2.3 (.84) Gate Collector (Cathode) Emitter (Anode) APT's devices are covered by one or more of the following U.S.patents: 4,89,8,4,93,89,434,82,234,9,22,262,336,26,83 4,748,3,283,2,23,474,434,9,28,8